VISHAY HFA15TB60 HEXFRED Ultrafast Soft Recovery Diode 15 A User Manual

VISHAY HFA15TB60 HEXFRED Ultrafast Soft Recovery Diode 15 A

FEATURES

• Ultrafast and ultrashort recovery
• Very low IRRM and Qtr.
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

BENEFITS

• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count

PRIMARY CHARACTERISTICS

IF(AV)| 15 A
VR| 600 V
VF at IF| 1.2 V
trr typ.| 23 ns
TJ max.| 150 °C
Circuit configuration| Single
Package| TO-220AC 2L

DESCRIPTION

VS-HFA15TB60… is a state-of-the-art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 15 A continuous current, the VS-HFA15TB60… is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA15TB60… is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed.

ABSOLUTE MAXIMUM RATINGS

PARAMETER| SYMBOL| TEST CONDITIONS| VALUES| UNITS
Cathode to anode voltage| VR| | 600| V
Maximum continuous forward current| IF| TC = 100 °C| 15| A
Single pulse forward current| IFSM| | 150
Maximum repetitive forward current| IFRM| | 60
Maximum power dissipation| PD| TC = 25 °C| 74| W
TC = 100 °C| 29
Operating junction and storage temperature range| TJ, TStg| | -55 to +150| °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNITS
Cathode to anode

breakdown voltage

| VBR| IR = 100 μA| 600| –| –| V
Maximum forward voltage| VFM| IF = 15 A| See fig. 1| –| 1.3| 1.7
IF = 30 A| –| 1.5| 2.0
IF = 15 A, TJ = 125 °C| –| 1.2| 1.6
Maximum reverse leakage current| IRM| VR = VR rated

TJ = 125 °C, VR = 0.8 x VR rated

| See fig. 2| –| 1.0| 10| μA
–| 400| 1000
Junction capacitance| CT| VR = 200 V| See fig. 3| –| 25| 50| pF
Series inductance| LS| Measured lead to lead 5 mm from package body| –| 8.0| –| nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNITS
Reverse recovery time See fig. 5| trr| IF = 1.0 A, diF/dt = 200 A/μs, VR = 30 V| –| 19| –| ns
trr1| TJ = 25 °C| IF = 15 A

diF/dt = 200 A/μs VR = 200 V

| –| 42| 60
trr2| TJ = 125 °C| –| 74| 120
Peak recovery current See fig. 6| IRRM1| TJ = 25 °C| –| 4.0| 6.0| A
IRRM2| TJ = 125 °C| –| 6.5| 10
Reverse recovery charge See fig. 7| Qrr1| TJ = 25 °C| –| 84| 180| nC
Qrr2| TJ = 125 °C| –| 241| 600
Peak rate of fall of recovery current during tb

See fig. 8

| di(rec)M/dt1| TJ = 25 °C| –| 188| –| A/μs
di(rec)M/dt2| TJ = 125 °C| –| 160| –
THERMAL – MECHANICAL SPECIFICATIONS

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNITS
Lead temperature| Tlead| 0.063″ from case (1.6 mm) for 10 s| –| –| 300| °C
Thermal resistance, junction to case| RthJC| | –| –| 1.7| K/W
Thermal resistance, junction to ambient| RthJA| Typical socket mount| –| –| 80
Weight| | | –| 2.0| –| g
–| 0.07| –| oz.
Mounting torque| | | 6.0

(5.0)

| –| 12

(10)

| kgf · cm (lbf · in)
Marking device| | Case style 2L TO-220AC| HFA15TB60

Graph

Fig. 5 – Typical Reverse Recovery Time vs. diF/dt

ORDERING INFORMATION TABLE

1.  Vishay Semiconductors product

2.  HEXFRED® family

3.  Electron irradiated

4. Current rating (15 = 15 A)

5. Package:
   TB = 2L TO-220AC

6. Voltage rating (60 = 600 V)

7. Environmental digit:
   -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N| BASE QUANTITY| PACKAGING DESCRIPTION
VS-HFA15TB60-M3| 50| Antistatic plastic tube
LINKS TO RELATED DOCUMENTS

Dimensions| www.vishay.com/doc?96156
Part marking information| www.vishay.com/doc?95391

DIMENSIONS in millimeters and inches

Notes

1. Dimensioning and tolerancing as per ASME Y14.5M-1994

2. Lead dimension and finish uncontrolled in L1

3. Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured
   at the outermost extremes of the plastic body

4. Dimension b1, b3, and c1 apply to base metal only

5. Controlling dimensions: inches

6. Thermal pad contour optional within dimensions E, H1, D2, and E1

7. Outline conforms to JEDEC® TO-220, except D2

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Antitechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• vishay.com/doc?96156

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