VISHAY IRFP450LCPbF Mosfet Single N Channel 500V 14A Owner’s Manual

VISHAY IRFP450LCPbF Mosfet Single N Channel 500V 14A

Product Information

Product Usage Instructions

To use the IRFP450LC Power MOSFET, follow these instructions:

1. Ensure that the input voltage does not exceed the drain-source Voltage (VDS) rating of 500 V (VGS = 10 V).
2. Connect the Drain (D), Gate (G), and Source (S) pins of the MOSFET according to the product pin configuration.
3. Make sure to use a suitable heat sink and apply thermal grease for efficient heat dissipation.
4. Connect the Gate-Source voltage (VGS) to 10 V to ensure proper operation.
5. Limit the Drain current (ID) to the Continuous Drain Current rating specified in the product documentation.
6. Take into account the Maximum Power Dissipation (PD) rating to prevent overheating.
7. Consider the recommended soldering temperature and duration when soldering the MOSFET.
8. Refer to the product documentation for detailed specifications and additional information.

Overview

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 0.40
Qg (Max.) (nC)| 74
Qgs (nC)| 19
Qgd (nC)| 35
Configuration| Single

FEATURES

• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V VGS Rating
• Reduced Ciss, Coss, Crss
• Isolated Central Mounting Hole
• Dynamic dV/dt Rated
• Repetitive Avalanche Rated
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

DESCRIPTION

This new series of low-charge Power MOSFETs achieve significantly lower gate charges over conventional MOSFETs. Utilizing advanced Power MOSFET technology the device improvements allow for reduced gate drive requirements, faster switching speeds, and increased total system savings. These device improvements combined with the proven ruggedness and reliability of Power MOSFETs offer the designer a new standard in power transistors for switching applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

ORDERING INFORMATION

ORDERING INFORMATION

Package| TO-247
Lead (Pb)-free| IRFP450LCPbF

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500| V
Gate-Source Voltage| VGS| ± 30
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 14|

A

TC = 100 °C| 8.6
Pulsed Drain Currenta| IDM| 56
Linear Derating Factor|  | 1.5| W/°C
Single Pulse Avalanche Energy| EAS| 760| mJ
Repetitive Avalanche Current| IAR| 14| A
Repetitive Avalanche Energy| EAR| 19| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 190| W
Peak Diode Recovery dv/DTC| dV/dt| 3.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Soldering Recommendations (Peak Temperature)| for 10 s|  | 300d
Mounting Torque| 6-32 or M3 screw|  | 10| lbf · in
1.1| N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
• VDD = 25 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
• ISD ≤ 14 A, dI/dt ≤ 130 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
• 1.6 mm from the case.

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 40|

°C/W

Case-to-Sink, Flat, Greased Surface| RthCS| 0.24| –
Maximum Junction-to-Case (Drain)| RthJC| –| 0.65

SPECIFICATIONS

SPECIFICATIONS T J = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.59| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero Gate Voltage Drain Current

| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25|

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 8.4 Ab| –| –| 0.40| W
Forward Transconductance| gfs| VDS = 50 V, ID = 8.4 Ab| 8.7| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 2200| –|

pF

Output Capacitance| Coss| –| 320| –
Reverse Transfer Capacitance| Crss| –| 28| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 14 A, VDS = 400 V,

see fig. 6 and 13b

| –| –| 74|

nC

Gate-Source Charge| Qgs| –| –| 19
Gate-Drain Charge| Qgd| –| –| 35
Turn-On Delay Time| td(on)|

VDD = 250 V, ID = 14 A,

RG = 6.2 W, RD = 17 W, see fig. 10b

| –| 14| –|

ns

Rise Time| tr| –| 49| –
Turn-Off Delay Time| td(off)| –| 30| –
Fall Time| tf| –| 30| –
Internal Drain Inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact

| –| 5.0| –|

nH

Internal Source Inductance| LS| –| 13| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse p – n junction diode

| –| –| 14|

A

Pulsed Diode Forward Current| ISM| –| –| 56
Body Diode Voltage| VSD| TJ = 25 °C, IS = 14 A, VGS = 0 Vb| –| –| 1.4| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μsb| –| 580| 870| ns
Body Diode Reverse Recovery Charge| Qrr| –| 5.1| 7.7| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFP450LC

Peak Diode Recovery dV/dt Test Circuit

Package Information

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
D1| 16.46| 16.76| 17.06| 5
---|---|---|---|---
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b 4 dimension at maximum material condition.

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
D2| 0.51| 1.30|
---|---|---|---
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with the exception of dimension c

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000.

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFP450LC MOSFETs | Vishay

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