VISHAY IRFZ44 Power Mosfet Owner’s Manual
- June 12, 2024
- VISHAY
Table of Contents
VISHAY IRFZ44 Power Mosfet
Product Information
- Product Name: Power MOSFET
- Model Numbers: IRFZ44, SiHFZ44
- Manufacturer: Vishay Siliconix
Description
The IRFZ44 and SiHFZ44 are third-generation Power MOSFETs from Vishay Siliconix. These MOSFETs offer fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is widely preferred for commercial-industrial applications with power dissipation levels up to approximately 50 W. The TO-220AB package has low thermal resistance and low cost, making it widely accepted in the industry.
Thermal Resistance Ratings
- Maximum Junction-to-Ambient (RthJA): 62
- Case-to-Sink, Flat, Greased Surface (RthCS): 0.50
- Maximum Junction-to-Case (Drain) (RthJC): 1.0
Product Usage Instructions
- Ensure that the drain-source voltage (VDS) does not exceed 60V.
- Connect the gate-source voltage (VGS) to a 10V power source.
- Make sure the drain current (ID) does not exceed the continuous or pulsed drain current limits.
- Consider the linear derating factor for the maximum power dissipation.
- Observe the operating junction and storage temperature range (-55°C to +175°C).
- Follow the recommended soldering temperature for 10 seconds.
- Use a 6-32 or M3 screw for mounting, applying the appropriate mounting torque.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS (V)| 60
RDS(on) (W)| VGS = 10 V| 0.028
Qg (Max.) (nC)| 67
Qgs (nC)| 18
Qgd (nC)| 25
Configuration| Single
FEATURES
- Dynamic dV/dt Rating
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contributes to its wide acceptance throughout the industry.
ORDERING INFORMATION
| Package | TO-220AB |
|---|---|
| Lead (Pb)-free | IRFZ44PbF |
SiHFZ44-E3
SnPb| IRFZ44
SiHFZ44
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 60| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current|
VGS at 10 V
| TC = 25 °C|
ID
| 50|
A
Continuous Drain Current| TC = 100 °C| 36
Pulsed Drain Current a| IDM| 200
Linear Derating Factor| | 1.0| W/°C
Single Pulse Avalanche Energy b| EAS| 100| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 150| W
Peak Diode Recovery dV/dtc| dV/dt| 4.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 175|
°C
Soldering Recommendations (Peak Temperature)d| for 10 s| | 300
Mounting Torque
|
6-32 or M3 screw
| | 10| lbf · in
1.1| N · m
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12).
- ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
- 1.6 mm from case.
- Current limited by the package, (die current = 51 A).
Pb containing terminations are not RoHS compliant, exemptions may apply
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62|
°C/W
Case-to-Sink, Flat, Greased Surface| RthCS| 0.50| –
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0
SPECIFICATIONS
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.060|
–| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25| μA
VDS = 48 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 31 Ab| –| –|
0.028| W
Forward Transconductance| gfs| VDS = 25 V, ID = 31 A| 15| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 1900| –|
pF
Output Capacitance| Coss| –| 920| –
Reverse Transfer Capacitance| Crss| –| 170| –
Total Gate Charge| Qg|
VGS = 10 V
|
ID = 51 A, VDS = 48 V,
see fig. 6 and 13b
| –| –| 67|
nC
Gate-Source Charge| Qgs| –| –| 18
Gate-Drain Charge| Qgd| –| –| 25
Turn-On Delay Time| td(on)|
VDD = 30 V, ID = 51 A,
Rg = 9.1 W, RD = 0.55 W, see fig. 10b
| –| 14| –|
ns
Rise Time| tr| –| 110| –
Turn-Off Delay Time| td(off)| –| 45| –
Fall Time| tf| –| 92| –
Internal Drain Inductance| LD| Between lead, 6 mm (0.25″) from package and
center of die contact
| –| 4.5| –|
nH
Internal Source Inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol
showing the integral reverse p – n junction diode
| –| –| 50|
A
Pulsed Diode Forward Currenta| ISM| –| –| 200
Body Diode Voltage| VSD| TJ = 25 °C, IS = 51 A, VGS = 0 Vb| –| –| 2.5| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 51 A, dI/dt = 100
A/ms| –| 120| 180| ns
Body Diode Reverse Recovery Charge| Qrr| –| 0.53| 0.80| nC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91291.
TO-220-1
| DIM. | MILLIMETERS | INCHES |
|---|---|---|
| MIN. | MAX. | MIN. |
| A | 4.24 | 4.65 |
| b | 0.69 | 1.02 |
| b(1) | 1.14 | 1.78 |
| c | 0.36 | 0.61 |
| D | 14.33 | 15.85 |
| E | 9.96 | 10.52 |
| e | 2.41 | 2.67 |
| e(1) | 4.88 | 5.28 |
| F | 1.14 | 1.40 |
| H(1) | 6.10 | 6.71 |
| J(1) | 2.41 | 2.92 |
| L | 13.36 | 14.40 |
| L(1) | 3.33 | 4.04 |
| Ø P | 3.53 | 3.94 |
| Q | 2.54 | 3.00 |
ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031
Note: M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM.
Package Picture
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