VISHAY IRFZ44 Power Mosfet Owner’s Manual

VISHAY IRFZ44 Power Mosfet

Product Information

• Product Name: Power MOSFET
• Model Numbers: IRFZ44, SiHFZ44
• Manufacturer: Vishay Siliconix

Description

The IRFZ44 and SiHFZ44 are third-generation Power MOSFETs from Vishay Siliconix. These MOSFETs offer fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is widely preferred for commercial-industrial applications with power dissipation levels up to approximately 50 W. The TO-220AB package has low thermal resistance and low cost, making it widely accepted in the industry.

Thermal Resistance Ratings

• Maximum Junction-to-Ambient (RthJA): 62
• Case-to-Sink, Flat, Greased Surface (RthCS): 0.50
• Maximum Junction-to-Case (Drain) (RthJC): 1.0

Product Usage Instructions

1. Ensure that the drain-source voltage (VDS) does not exceed 60V.
2. Connect the gate-source voltage (VGS) to a 10V power source.
3. Make sure the drain current (ID) does not exceed the continuous or pulsed drain current limits.
4. Consider the linear derating factor for the maximum power dissipation.
5. Observe the operating junction and storage temperature range (-55°C to +175°C).
6. Follow the recommended soldering temperature for 10 seconds.
7. Use a 6-32 or M3 screw for mounting, applying the appropriate mounting torque.

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 60
RDS(on) (W)| VGS = 10 V| 0.028
Qg (Max.) (nC)| 67
Qgs (nC)| 18
Qgd (nC)| 25
Configuration| Single

FEATURES

• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contributes to its wide acceptance throughout the industry.

ORDERING INFORMATION

SiHFZ44-E3
SnPb| IRFZ44
SiHFZ44

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 60| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current|

VGS at 10 V

| TC = 25 °C|

ID

| 50|

A

Continuous Drain Current| TC = 100 °C| 36
Pulsed Drain Current a| IDM| 200
Linear Derating Factor|  | 1.0| W/°C
Single Pulse Avalanche Energy b| EAS| 100| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 150| W
Peak Diode Recovery dV/dtc| dV/dt| 4.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 175|

°C

Soldering Recommendations (Peak Temperature)d| for 10 s|  | 300

Mounting Torque

|

6-32 or M3 screw

|  | 10| lbf · in
1.1| N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
• VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12).
• ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
• 1.6 mm from case.
• Current limited by the package, (die current = 51 A).

Pb containing terminations are not RoHS compliant, exemptions may apply

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62|

°C/W

Case-to-Sink, Flat, Greased Surface| RthCS| 0.50| –
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.060| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25| μA
VDS = 48 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 31 Ab| –| –| 0.028| W
Forward Transconductance| gfs| VDS = 25 V, ID = 31 A| 15| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1900| –|

pF

Output Capacitance| Coss| –| 920| –
Reverse Transfer Capacitance| Crss| –| 170| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 51 A, VDS = 48 V,

see fig. 6 and 13b

| –| –| 67|

nC

Gate-Source Charge| Qgs| –| –| 18
Gate-Drain Charge| Qgd| –| –| 25
Turn-On Delay Time| td(on)|

VDD = 30 V, ID = 51 A,

Rg = 9.1 W, RD = 0.55 W, see fig. 10b

| –| 14| –|

ns

Rise Time| tr| –| 110| –
Turn-Off Delay Time| td(off)| –| 45| –
Fall Time| tf| –| 92| –
Internal Drain Inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact

| –| 4.5| –|

nH

Internal Source Inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse p – n junction diode

| –| –| 50|

A

Pulsed Diode Forward Currenta| ISM| –| –| 200
Body Diode Voltage| VSD| TJ = 25 °C, IS = 51 A, VGS = 0 Vb| –| –| 2.5| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 51 A, dI/dt = 100 A/ms| –| 120| 180| ns
Body Diode Reverse Recovery Charge| Qrr| –| 0.53| 0.80| nC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91291.

TO-220-1

ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031

Note: M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM.

Package Picture

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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References

• applications.no
• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFZ44 MOSFETs | Vishay

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