IRFP250 Vishay Siliconix Footprint And Symbol Instructions
- June 12, 2024
- VISHAY
Table of Contents
IRFP250
Vishay Siliconix
Power MOSFET
TO-247AC
N-Channel MOSFET
PRODUCT SUMMARY
VDS (V)
| 200
RDS(on) (Ω)| VGS = 10 V|
0.085
Qg (max.) (nC)
| 140
Qgs (nC)|
28
Qgd (nC)
| 74
Configuration|
Single
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of Paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universially preferred for commercial-industrial
applications where higher power levels preclude the use of TO-220AB devices.
The TO-247AC is similar but superior to the earlier TO-218 package because of
its isolated mounting hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package| TO-247AC
Lead (Pb)-free| IRFP250PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER|
SYMBOL
| LIMIT|
UNIT
Drain-source voltage|
VDS
| 200|
V
Gate-source voltage|
VGS
|
± 20
Continuous drain current| VGS at 10 V| TC = 25 °C|
ID
| 30|
A
TC = 100 °C|
19
Pulsed drain current a|
IDM
|
120
Linear derating factor| |
1.5
|
W/°C
Single pulse avalanche energy b|
EAS
| 410|
mJ
Repetitive avalanche current a|
IAR
| 30|
A
Repetitive avalanche energy a|
EAR
| 19|
mJ
Maximum power dissipation| TC = 25 °C|
PD
| 190|
W
Peak diode recovery dV/dt c|
dV/dt
| 5.0|
V/ns
Operating junction and storage temperature range|
TJ, Tstg
| -55 to +150|
°C
Soldering recommendations (peak temperature) d| for 10 s| |
300
Mounting torque| 6-32 or M3 screw| |
10
|
lbf · in
1.1
|
N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 683 μH, Rg = 25 Ω, IAS = 30 A (see
fig. 12)
c. ISD ≤ 30 A, dI/dt ≤ 190 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER|
SYMBOL
| TYP.| MAX.|
UNIT
Maximum junction-to-ambient|
RthJA
| –| 40|
°C/W
Case-to-sink, flat, greased surface|
RthCS
| 0.24|
–
Maximum junction-to-case (drain)|
RthJC
| –|
0.65
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER|
SYMBOL
| TEST CONDITIONS| MIN.| TYP.| MAX.|
UNIT
Static
Drain-source breakdown voltage|
VDS
|
VGS = 0 V, ID = 250 μA
| 200| –| –|
V
VDS temperature coefficient |
ΔVDS/TJ
|
Reference to 25 °C, ID = 1 mA
| –| 0.27| –|
V/°C
Gate-source threshold voltage|
VGS(th)
|
VDS = VGS, ID = 250 μA
| 2.0| –| 4.0|
V
Gate-source leakage |
IGSS
|
VGS = ± 20 V
| –| –| ± 100|
nA
Zero gate voltage drain current |
IDSS
|
VDS = 200 V, VGS = 0 V
|
–
| –| 25|
μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C|
–
| –|
250
Drain-source on-state resistance|
RDS(on)
| VGS = 10 V| ID = 18 A b|
–
| –| 0.085|
Ω
Forward transconductance|
gfs
| VDS = 50 V, ID = 18 A|
12
| –| –|
S
Dynamic
Input capacitance|
Ciss
| VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5|
–
| 2800| –|
pF
Output capacitance|
Coss
|
–
| 780|
–
Reverse transfer capacitance|
Crss
|
–
| 250|
–
Total gate charge|
Qg
| VGS = 10 V| ID = 30 A, VDS = 160 V, see fig. 6 and 13 b|
–
| –| 140|
nC
Gate-source charge|
Qgs
|
–
| –|
28
Gate-drain charge|
Qgd
|
–
| –|
74
Turn-on delay time|
td(on)
| VDD = 100 V, ID = 30 A,
Rg = 6.2 Ω, RD = 3.2 Ω, see fig. 10 b|
–
| 16| –|
ns
Rise time|
tr
|
–
| 86|
–
Turn-off delay time|
td(off)
|
–
| 70|
–
Fall time|
tf
|
–
| 62|
–
Internal drain inductance|
LD
|
Between lead, 6 mm (0.25″) from package and center of die contact
|
–
| 5.0| –|
nH
Internal source inductance|
LS
|
–
| 13|
–
Drain-Source Body Diode Characteristics
Continuous source-drain diode current|
IS
| MOSFET symbol showing the integral reverse p – n junction diode|
–
| –| 30|
A
Pulsed diode forward current a|
ISM
|
–
| –|
120
Body diode voltage|
VSD
| TJ = 25 °C, IS = 30 A, VGS = 0 V b|
–
| –| 2.0|
V
Body diode reverse recovery time|
trr
| TJ = 25 °C, IF = 30 A, dI/dt = 100 A/ms|
–
| 360| 540|
ns
Body diode reverse recovery charge|
Qrr
|
–
| 4.6| 6.9|
μC
Forward turn-on time|
ton
| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 – Typical Output Characteristics, T C = 25 °C
Fig. 2 – Typical Output Characteristics, T C = 150 °C
Fig. 3 – Typical Transfer Characteristics
Fig. 4 – Normalized On-Resistance vs. Temperature
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Typical Source-Drain Diode Forward Voltage
Fig. 8 – Maximum Safe Operating Area
Fig. 9 – Maximum Drain Current vs. Case Temperature
Fig. 10a – Switching Time Test Circuit
- Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a – Unclamped Inductive Test Circuit
- Vary tp to obtain required IAS
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test
-
Current regulator
Same type as D.U.T. -
Current sampling resistors
Peak Diode Recovery dV/dt Test Circuit
-
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance current transformer -
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. – device under test
Fig. 14 – For N-Channel
Note
a. VGS = 5 V for logic level devices
-
Driver gate drive
-
D.U.T. lSD waveform
-
Reverse recovery current
-
D.U.T. VDS waveform
-
Re-applied voltage
-
Inductor current
-
Body diode forward drop
-
Diode recovery
dV/dt -
Body diode forward current
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, seewww.vishay.com/ppg?91212.
S22-0046, Rev. C, 24-Jan-2021 Document Number: 91212
Package Information
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.|
NOTES
A
| 4.83| 5.02| 5.21|
A1| 2.29| 2.41|
2.55
|
A2
| 1.17| 1.27| 1.37|
b| 1.12| 1.20|
1.33
|
b1
| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39|
6
b3
| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22|
6, 8
b5
| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60|
6
c1
| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70|
4
D1
| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66|
0.76
|
E
| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16|
5
E2
| 4.52| 4.91| 5.49| 3
e|
5.46 BSC
|
L
| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16|
6
Ø P
| 3.56| 3.61| 3.65| 7
Ø P1|
7.19 ref.
|
Q
| 5.31| 5.50| 5.69|
S|
5.51 BSC
|
Notes
(1) Package reference: JEDEC® TO247, variation AC
(2) All dimensions are in mm
(3) Slot required, notch may be rounded
(4) Dimension D and E do not include mold flash. Mold flash shall not exceed
0.127 mm per side. These dimensions are measured at the outermost extremes of
the plastic body
(5) Thermal pad contour optional with dimensions D1 and E1
(6) Lead finish uncontrolled in L1
(7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a
maximum hole diameter of 3.91 mm
(8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar
protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum
material condition
VERSION 2: FACILITY CODE = Y
Lead Assignments
-
Gate
-
Drain
-
Source
-
Drain
-
Thermal pad
-
Planting
-
Base metal
|
MILLIMETERS
|
---|---|---
DIM.| MIN.| MAX.|
NOTES
A
| 4.58| 5.31|
A1| 2.21|
2.59
|
A2
| 1.17| 2.49|
b| 0.99|
1.40
|
b1
| 0.99| 1.35|
b2| 1.53|
2.39
|
b3
| 1.65| 2.37|
b4| 2.42|
3.43
|
b5
| 2.59| 3.38|
c| 0.38|
0.86
|
c1
| 0.38| 0.76|
D| 19.71|
20.82
|
D1
| 13.08|
–
|
D2
| 0.51| 1.30|
E| 15.29|
15.87
|
E1
| 13.72| –|
e|
5.46 BSC
|
Ø k
| 0.254|
L| 14.20|
16.25
|
L1
| 3.71| 4.29|
Ø P| 3.51|
3.66
|
Ø P1
| –| 7.39|
Q| 5.31|
5.69
|
R
| 4.52| 5.49|
S|
5.51 BSC
|
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed
0.127 mm (0.005″) per side. These dimensions are measured at the outermost
extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a
maximum hole diameter of 3.91 mm (0.154″)
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
- Base metal
- Plating
|
MILLIMETERS
---|---
DIM.| MIN.|
MAX.
A
| 4.65| 5.31
A1| 2.21|
2.59
A2
| 1.17| 1.37
b| 0.99|
1.40
b1
| 0.99| 1.35
b2| 1.65|
2.39
b3
| 1.65| 2.34
b4| 2.59|
3.43
b5
| 2.59| 3.38
c| 0.38|
0.89
c1
| 0.38| 0.84
D| 19.71|
20.70
D1
| 13.08| –
D2| 0.51|
1.35
E
| 15.29| 15.87
E1| 13.46|
–
e
| 5.46 BSC
k|
0.254
L
| 14.20| 16.10
L1| 3.71|
4.29
N
| 7.62 BSC
P| 3.56|
3.66
P1
| –| 7.39
Q| 5.31|
5.69
R
| 4.52| 5.49
S|
5.51 BSC
ECN: E22-0452-Rev. G, 31-Oct-2022
DWG: 5971
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed
0.127 mm (0.005″) per side. These dimensions are measured at the outermost
extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a
maximum hole diameter of 3.91 mm (0.154″)
Revision: 31-Oct-2022 Document Number: 91360
For technical questions, contact: hvm@vishay.com
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HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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