VISHAY IRFPF50 Siliconix Power MOSFET Instruction Manual

: June 12, 2024
: VISHAY

Table of Contents

Power MOSFET
FEATURES
DESCRIPTION
TYPICAL CHARACTERISTICS
Peak Diode Recovery dV/dt Test Circuit
TO-247AC (High Voltage)
Package Information
Legal Disclaimer Notice
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

IRFPF50
Vishay Siliconix
www.vishay.com

Power MOSFET

VISHAY IRFPF50 Siliconix Power MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rated
Repetitive avalanche rated
Isolated central mounting hole
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFPF50PbF
ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 900| V
Gate-source voltage| Vas| ± 20
Continuous drain current| V35 at 10 V| Tc = 25 °C| ID| 7.| A
c =
T 100 °C| 4.
Pulsed drain current a| ‘Dm| 27
Linear derating factor| | 2.| Wit
Single pulse avalanche energy b| EAS| 880| mJ
Repetitive avalanche current a| IAR| 7.| A
Repetitive avalanche energy a| EAR| 19| mJ
Maximum power dissipation| Tc = 25 °C| PD| 190| W
Peak diode recovery dV/dt c| dV/dt| 2.| V/ns
Operating junction and storage temperature range| Tj, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)| for 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf .in
1.| N .m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 6.7 A (see fig. 12)
c. ISD ≤ 6.7 A, dI/dt ≤ 130 A/μs, VDD ≤ 600, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| | 40| °C/W
Case-to-sink, flat, greased surface| Rthcs| 0.24|
Maximum junction-to-case (drain)| RthjC| | 0.65
SPECIFICATIONS (Tj = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TW.| MAX.| UNIT
Static
Drain-source breakdown voltage| VPS| VGs = 0 V, ID = 250 pA| 900| –| –| V
VDs temperature coefficient| AN/Dsiii| Reference to 25 °C, lc, = 1 mA| –| 1.| –| V/°C
Gate-source threshold voltage| VG5(th)| VDs = VGS, ID = 250 pA| 2.0| –| 4.0| V
Gate-source leakage| IGss| VGs = ± 20 V| | –| ± 100| nA
Zero gate voltage drain current| IDSS| VDs = 900 V, VGs = 0 V| | | 100| pA
Vps = 720 V, VGs = 0 V, TJ = 125 °C| | | 500
Drain-source on-state resistance| RDs(on)| VGs = 10 V| lo = 4.0 Ab| | | 2.| Q
Forward transconductance| %| Vps = 100 v, lo = 4.0 Ab| 5.| | –| S
Dynamic
Input capacitance| Gas| Vss = 0 V,
Vps = 25 V,
f = 1.0 MHz, see fig. 5| –| 2900| –| pF
Output capacitance| Coss| | 270| –
Reverse transfer capacitance| Gras| | 92| –
Total gate charge| Qg| VGs = 10 V| lo = 6.7 A, Vps = 360 V,
see fig. 6 and 13b| | –| 200| nC
Gate-source charge| Ogs| | | 24
Gate-drain charge| Ogd| | | 110
Turn-on delay time| td(on)| VDD = 450 V, ID = 6.7 A ,
RG = 6.2 Q, RD = 67 0, see fig. 1 06
| | 20| | ns
Rise time| ti.
| 34| –
Turn-off delay time| td(off)| | 130| –
Fall time| tf| | 37| –
Internal drain inductance| LD| Between lead,
6 mm (0.25′) from
package and center of die contact
| | 5.0| –| nH
Internal source inductance| Ls| | 13| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET symbol showing the
integral reverse
p – n junction diode| | –| 7.| A
Pulsed diode forward current a| ISM| | –| 27
Body diode voltage| VS0| TJ = 25 °C, Is = 6.7 A, VGs = 0 Vb| | | 2.| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF= 6.7 A, dVdt = 100 A/psb| | 610| 920| ns
Body diode reverse recovery charge| Qrr| | 3.| 5.| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LS

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 2 – Typical Output Characteristics, TC = 150 °C

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

Fig. 10 – Switching Time Test Circuit

Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

VISHAY IRFPF50 Siliconix Power MOSFET - CHARACTERISTICS
12

Fig. 13 – Unclamped Inductive Test Circuit

VISHAY IRFPF50 Siliconix Power MOSFET - CHARACTERISTICS
13

Fig. 14 – Unclamped Inductive Waveforms

Fig. 15 – Maximum Avalanche Energy vs. Drain Current

VISHAY IRFPF50 Siliconix Power MOSFET - CHARACTERISTICS
15

Fig. 16 – Basic Gate Charge Waveform

Fig. 17 – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

VISHAY IRFPF50 Siliconix Power MOSFET - CHARACTERISTICS
18

Driver gate drive

VISHAY IRFPF50 Siliconix Power MOSFET - CHARACTERISTICS
19

Note
a. VGS= 5 V for logic level devices
Fig. 18 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91251.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9 VISHAY IRFPF50 Siliconix Power MOSFET -
Voltage

|

MILLIMETERS

|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
|

MILLIMETERS

|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

Package reference: JEDEC
TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

Package Information

VERSION 2: FACILITY CODE = Y VISHAY IRFPF50 Siliconix Power MOSFET -
Package

|

MILLIMETERS

|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
|

MILLIMETERS

|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

VISHAY IRFPF50 Siliconix Power MOSFET - FACILITY

|

MILLIMETERS

---|---
DIM.| MIN.| MAX.
A| 4.65| 5.31
A1| 2.21| 2.59
A2| 1.17| 1.37
b| 0.99| 1.40
b1| 0.99| 1.35
b2| 1.65| 2.39
b3| 1.65| 2.34
b4| 2.59| 3.43
b5| 2.59| 3.38
c| 0.38| 0.89
c1| 0.38| 0.84
D| 19.71| 20.70
D1| 13.08| –
| MILLIMETERS
---|---
DIM.| MIN.| MAX.
D2| 0.51| 1.35
E| 15.29| 15.87
E1| 13.46| –
e| 5.46 BSC
k| 0.254
L| 14.20| 16.10
L1| 3.71| 4.29
N| 7.62 BSC
P| 3.56| 3.66
P1| –| 7.39
Q| 5.31| 5.69
R| 4.52| 5.49
S| 5.51 BSC

ECN: E22-0452-Rev. G, 31-Oct-2022
DWG: 5971

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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