VISHAY IRFI9Z14GPBF Power MOSFET Owner’s Manual
- June 12, 2024
- VISHAY
Table of Contents
VISHAY IRFI9Z14GPBF Power MOSFET Owner’s Manual
**TO-220 FULLPAK
**
**P-Channel MOSFET
**
PRODUCT SUMMARY
VDS (V)| -60
RDS(on) (W)| VGS = -10 V| 0.50
Qg (Max.) (nC)| 12
Qgs (nC)| 3.8
Qgd (nC)| 5.1
Configuration| Single
FEATURES
- Isolated package
- High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to lead creepage distance = 4.8 mm
- P-channel
- 175 °C operating temperature
- Dynamic dV/dt rating
- Low thermal resistance
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package| TO-220 FULLPAK
Lead (Pb)-free| IRFI9Z14GPbF
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at -10 V| TC = 25 °C| ID| -5.3| A
TC = 100 °C| -3.8
Pulsed drain current a| IDM| -21
Linear derating factor| | 0.18| W/°C
Single pulse avalanche energy b| EAS| 120| mJ
Repetitive avalanche current a| IAR| -5.3| A
Repetitive avalanche energy a| EAR| 2.7| mJ
Maximum power dissipation| TC = 25 °C| PD| 27| W
Peak diode recovery dV/dt c| dV/dt| -4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| M3 screw| | 0.6| Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. VDD = -25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 , IAS = -5.3 A
(see fig. 12)
c. ISD -6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 65| °C/W
Maximum junction-to-case (drain)| RthJC| –| 5.5
SPECIFICATIONS T J = 25 °C, unless otherwise noted
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-ssource breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –|
-0.060| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –|
-4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -60 V, VGS = 0 V| –| –| -100| μA
VDS = -48 VGS = 0 V, TJ = 150 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = -3.2 A b| –| –|
0.50| W
Forward transconductance| gfs| VDS = -25 V, ID = -3.2 A b| 1.6| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = -25 V,f = 1.0 MHz, see fig. 5| –|
270| –|
pF
Output capacitance| Coss| –| 170| –
Reverse transfer capacitance| Crss| –| 31| –
Drain to sink capacitance| C| f = 1.0 MHz| –| 12| –
Total gate charge| Qg| VGS = -10 V| ID = -6.7 A, VDS = -48 V,see fig. 6 and 13
b| –| –| 12| nC
Gate-source charge| Qgs| –| –| 3.8
Gate-drain charge| Qgd| –| –| 5.1
Turn-on delay time| td(on)| VDD = -30 V, ID = -6.7 A, RG = 24 W, RD= 4.0 W,see
fig. 10b| –| 11| –|
ns
Rise time| tr| –| 63| –
Turn-off delay time| td(off)| –| 9.6| –
Fall time| tf| –| 31| –
Internal drain inductance| LD| Between lead, D6 mm
(0.25″) from package and center ofGdie contactS| –| 4.5| –|
nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbolDshowing theintegral
reverseGp – n junction diodeS| –| –| -5.3| A
Pulsed diode forward current a| ISM| –| –| -21
Body diode voltage| VSD| TJ = 25 °C, IS = -5.3 A, VGS = 0 V b| –| –| -5.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -6.7 A, dI/dt = 100
A/μs b| –| 80| 160| ns
Body diode reverse recovery charge| Qrr| –| 0.096| 0.19| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
**Fig. 1 – Typical Output Characteristics, TC= 25 °C
**
**Fig. 2 – Typical Output Characteristics, TC= 175 °C
**
**Fig. 3 – Typical Transfer Characteristics
**
**Fig. 4 – Normalized On-Resistance vs. Temperature
**
Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage
**Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage
**
**Fig. 7 – Typical Source-Drain Diode Forward Voltage
**
Fig. 8 – Maximum Safe Operating Area
**Fig. 9 – Maximum Drain Current vs. Case Temperature
**
Fig. 10a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveforms
Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12a – Unclamped Inductive Test Circuit Fig.
12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
**Fig. 13a – Basic Gate Charge Waveform
**
**Fig. 13b – Gate Charge Test Circuit
**
**Peak Diode Recovery dV/dt Test Circuit
**
Note
- Compliment N-Channel of D.U.T. for driver
Fig. 14 – For P-Channel
TO-220 FULLPAK (High Voltage)
OPTION 1: FACILITY CODE = 9
| MILLIMETERS
---|---
DIM.| MIN.| NOM.| MAX.
A| 4.60| 4.70| 4.80
b| 0.70| 0.80| 0.91
b1| 1.20| 1.30| 1.47
b2| 1.10| 1.20| 1.30
C| 0.45| 0.50| 0.63
D| 15.80| 15.87| 15.97
e| 2.54 BSC
E| 10.00| 10.10| 10.30
F| 2.44| 2.54| 2.64
G| 6.50| 6.70| 6.90
L| 12.90| 13.10| 13.30
L1| 3.13| 3.23| 3.33
Q| 2.65| 2.75| 2.85
Q1| 3.20| 3.30| 3.40
Ø R| 3.08| 3.18| 3.28 Notes
- To be used only for process drawing
- These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
- All critical dimensions should C meet Cpk > 1.33
- All dimensions include burrs and plating thickness
- No chipping or package damage
- Facility code will be the 1st character located at the 2nd row of the unit marking
OPTION 2: FACILITY CODE = Y
| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.570| 4.830| 0.180| 0.190
A1| 2.570| 2.830| 0.101| 0.111
A2| 2.510| 2.850| 0.099| 0.112
b| 0.622| 0.890| 0.024| 0.035
b2| 1.229| 1.400| 0.048| 0.055
b3| 1.229| 1.400| 0.048| 0.055
c| 0.440| 0.629| 0.017| 0.025
D| 8.650| 9.800| 0.341| 0.386
d1| 15.88| 16.120| 0.622| 0.635
d3| 12.300| 12.920| 0.484| 0.509
E| 10.360| 10.630| 0.408| 0.419
e| 2.54 BSC| 0.100 BSC
L| 13.200| 13.730| 0.520| 0.541
L1| 3.100| 3.500| 0.122| 0.138
n| 6.050| 6.150| 0.238| 0.242
Ø P| 3.050| 3.450| 0.120| 0.136
u| 2.400| 2.500| 0.094| 0.098
V| 0.400| 0.500| 0.016| 0.020
ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972
Notes
- To be used only for process drawing
- These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads
- All critical dimensions should C meet Cpk > 1.33
- All dimensions include burrs and plating thickness
- No chipping or package damage
- Facility code will be the 1st character located at the 2nd row of the unit marking
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT
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References
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