VISHAY IRL510 Power MOSFET Instruction Manual
- June 4, 2024
- VISHAY
Table of Contents
IRL510, SiHL510
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
| VDS (V) | 100 |
|---|---|
| RDS(on) (L) | VGS = 5.0 V |
| Qg (Max.) (NC) | 6.1 |
| Qgs (NC) | 2.6 |
| QGD (NC) | 3.3 |
| Configuration | Single |
FEATURES
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Logic-Level Gate Drive
- RDS(on) Specified at VGS = 4 V and 5 V
- 175 °C Operating Temperature
- Fast Switching
- Ease of Paralleling
- Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRL510PbF
SiHL510-E3
SnPb| IRL510
SiHL510
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 100| V
Gate-Source Voltage| VGS| ± 10
Continuous Drain Current| VGS at 5 V| TC = 25 °C| ID| 5.6|
A
TC = 100 °C| 4.0
Pulsed Drain Current| ITEM| 18
Linear Derating Factor| | 0.29| W/°C
Single Pulse Avalanche Energy| EAS| 100| MJ
Repetitive Avalanche Current| IAR| 5.6| A
Repetitive Avalanche Energy| EAR| 4.3| MJ
Maximum Power Dissipation| TC = 25 °C| PD| 43| W
Peak Diode Recovery dv/DTC| DV/DT| 5.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 175| °C
Soldering Recommendations (Peak Temperature)| for 10 s| | 300d
Mounting Torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 4.8 mH, Rg = 25 Ω, IAS = 5.6 A (see
fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from the case.
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
|---|---|---|---|---|
| Maximum Junction-to-Ambient | that | – | 62 | °C/W |
| Case-to-Sink, Flat, Greased Surface | RCS | 0.50 | – | |
| Maximum Junction-to-Case (Drain) | RthJC | – | 3.5 |
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 pA| 100| –| –| V
DVDs Temperature Coefficient| AVDs/Ti| Reference to 25 °C, ID = 1 mA| –| 0.12|
–| V/°C
Gate-Source Threshold Voltage| vision)| Nips = V05, ID = 250 pA| 1.0| –| 2.0|
V
Gate-Source Leakage| IGSS| V05 = ± 10 V| | –| ± 100| nA
Zero Gate Voltage Drain Current| loss| Nips = 100 M, Nips = 0 N.,| | –| 25| pA
\fps = 80 V, VGs = 0 M, Tj = 150 °C| –| –| 250
Drain-Source On-State Resistance| we| M65 = 5.0 V| ID = 3.4 Ab| | –| 0.54| (2
VGs = 4.0 V| ID = 2.8 Ab| | –| 0.76
Forward Transconductance| Ors| \fps = 50 V, 1D = 3.4 Ab| 2.| –| –| S
Dynamic
Input Capacitance| C,,,s| VDS = 0 V,
Mots = 25 V,
f = 1.0 MHz, see fig. 5| | 250| –| pF
Output Capacitance| Coss| | 80| –
Reverse Transfer Capacitance| Crss| | 15| –
Total Gate Charge| Qg| VGS = 5.0 V| ID Mse = 80
see fig. 6 and 13b V| | –| 6.| ‘2
Gate-Source Charge| Qgs| | –
2.6|
Gate-Drain Charge| Ogd| –| –| 3.
Turn-On Delay Time| talon)| VDD = 50 V, ID = 5.6 A
Rg = 12 S2, RD= 8.4 (1
see fig. 10b| | 9.| | ns
Rise Time| t,| | 4/|
Tum-Off Delay Time| tam°| | 16|
Fall Time| t1| | 18|
Internal Drain Inductance| LD| Between lead,
6 mm (0.25′) from
package and center of die contact| | | 45| |
Internal Source Inductance| Ls| n[i| 8.|
Drain-Source Body Diode Characteristics|
Continuous Source-Drain Diode Current| Is| MOSFET symbol
showing thers
integral reverse .0
p – n junction diode| | | 6.| A
Pulsed Diode Forward Currents| Ism| | | 18
Body Diode Voltage| VSD| Tj = 25 °C, Is = 5.6 A, M05 = 0 Mb| –| –| 3.| V
Body Diode Reverse Recovery Time| In| Tj = 25 °C, IF = 5.6 A,
DVDs = 100 A/psb| | 110| 130| ns
Body Diode Reverse Recovery Charge| ()„| | 0.50| 0.65| PC
Forward Turn-On Time| to,| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and LS
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
| 
---|---
| 
| 
DIM.| MILLIMETERS| INCHES
---|---|---
MIN.| MAX.| MIN.| MAX.
A| 4.24| 4.65| 0.167| 0.183
b| 0.69| 1.02| 0.027| 0.040
b(1)| 1.14| 1.78| 0.045| 0.070
c| 0.36| 0.61| 0.014| 0.024
D| 14.33| 15.85| 0.564| 0.624
E| 9.96| 10.52| 0.392| 0.414
e| 2.41| 2.67| 0.095| 0.105
e(1)| 4.88| 5.28| 0.192| 0.208
F| 1.14| 1.40| 0.045| 0.055
H(1)| 6.10| 6.71| 0.240| 0.264
J(1)| 2.41| 2.92| 0.095| 0.115
L| 13.36| 14.40| 0.526| 0.567
L(1)| 3.33| 4.04| 0.131| 0.159
Ø P| 3.53| 3.94| 0.139| 0.155
Q| 2.54| 3.00| 0.100| 0.118
ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031
Disclaimer
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- Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91297
www.vishay.com
S11-0518-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Revision: 09-Jul-2021
Document Number: 91000
Documents / Resources
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VISHAY IRL510 Power
MOSFET
[pdf] Instruction Manual
IRL510 Power MOSFET, IRL510, SiHL510, Power MOSFET
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