VISHAY IRFPF50PbF Power MOSFET Owner’s Manual
- June 11, 2024
- VISHAY
Table of Contents
IRFPF50PbF Power MOSFET
Owner’s Manual
IRFPF50, SiHFPF50
Vishay Silicone
IRFPF50PbF Power MOSFET
Power MOSFET
PRODUCT SUMMARY
VDS (V)| 900
RDS(on) (L)| VGS = 10 V| 1.6
Ql (Max.) (NC)| 200
Qms (NC)| 24
GQ (NC)| 110
Configuration| Single
FEATURES
- Dynamic dB/dt. Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220AB devices. The TO-247AC is
similar but superior to the earlier TO-218 package because its isolated
mounting hole. It also provides greater creepage distances between pins to
meet the requirements of most safety specifications.
ORDERING INFORMATION
Package| TO-247AC
Lead (Pb)-free| IRFPF50PbF
SiHFPF50-E3
Snubs| IRFPF50
SiHFPF50
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 900| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 6.7| A
TC = 100 °C| 4.2
Pulsed Drain Current| IDM| 27
Linear Derating Factor| | 1.5| W/°C
Single Pulse Avalanche Energy| EAS| 880| mJ
Repetitive Avalanche Current| IAR| 6.7| A
Repetitive Avalanche Energy| EAR| 19| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 190| W
Peak Diode Recovery dB/dt.| dV/dt| 1.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Soldering Recommendations (Peak Temperature)| for 10 s| | 300d
Mounting Torque| 6-32 or M3 screw| | 10| lb · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 37 MH, Rig = 25 Ω, IAS = 6.7 A (see
fig. 12).
c. ISD ≤ 6.7 A, dI/dt. ≤ 130 A/μs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
- Pb containing terminations are not RoHS compliant, exemptions may apply
Vishay Silicone
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| Rhea| –| 40|
°C/W
Case-to-Sink, Flat, Greased Surface| Retch’s| 0.24| –
Maximum Junction-to-Case (Drain)| Worth| –| 0.65
SPECIFICATIONS (1) = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 PA| 900| –| –| V
VDs Temperature Coefficient| AVDs/11,1| Reference to 25 °C, ID = 1 mA| | 12|
–| V/°C
Gate-Source Threshold Voltage| V6 1.0| \les = VGS, ID = 250 PA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = t 20 V| | | ± 100| nab
Zero Gate Voltage Drain Current| ID’s| VDs= 900 V,VGs= 0 V| | –| 100| PA
VDs = 720 V, VDs = 0 V, Taj = 125 °C| | | 500
Drain-Source On-State Resistance| R moil| VGS = 10 V| ID = 4.0 Ab| | –| 2.| 0
Forward Transconductance| Offs| Nips = 100 V, ID = 4.0 Ab| 5.| –| –| S
Dynamic
Input Capacitance| Gas| VGs = 0 V,
VDG = 25 V,
f = 1.0 MHz, see fig. 5| –| 2900| –| pF
Output Capacitance| Costs| | 270| –
Reverse Transfer Capacitance| C«| | 92| –
Total Gate Charge| 9| VGS = 10 V| ID = 6.7 A, VDS = 360 V,
see fig. 6 and 13b| | –| 200| nC
Gate-Source Charge| Qgs| | –| 24
Gate-Drain Charge| Q gd| | | 110
Tum-On Delay Time| td(on)| V DD = 450 V, ID= 6.7 A ,
RG = 6.212, RD = 6712, see fig. 10ID| | 20| –| 2
Rise Time| tr| | |
Turn-Off Delay Time| td(off| | 130|
Fall Time| ft| | 37|
Internal Drain Inductance| LD| Between lead, 6 mm (0.25″) from
package and center of die contact| | 5.0| | nH
Internal Source Inductance| Ls| | 13| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| Is| MOSFET symbol
showing the integral reverse
p – n junction diode| –| –| 6.7| A
Pulsed Diode Forward Currents| ism| –| –| 27
Body Diode Voltage| VSD| Taj = 25 °C, Is = 6.7 A VGS = 0 Vb| –| –| 1.8| V
Body Diode Reverse Recovery Time| torr| Taj = 25 °C, IF = 6.7 A, dl/dt. = 100
A/pub| –| 610| 920| ns
Body Diode Reverse Recovery Charge| Qtr.| –| 3.2| 4.8| µC
Forward Tum-On Time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and Lo)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Silicone maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91251.
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
|
MILLIMETERS
|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
|
MILLIMETERS
|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|
Notes
- Package reference: JEDEC ® TO247, variation AC
- All dimensions are in mm
- Slot required, notch may be rounded
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- Dimension b2 and b4 does not include dam bar protrusion. Allowable dam bar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition
VERSION 2: FACILITY CODE = Y
|
MILLIMETERS
|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
|
MILLIMETERS
|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
- Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Disclaimer
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Revision: 19-Oct-2020
Document Number: 91360
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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References
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