VISHAY IRFR420 Siliconix Power MOSFET Instruction Manual

: June 9, 2024
: VISHAY

Table of Contents

Power MOSFET
FEATURES
DESCRIPTION
Case Outline for TO-251AA (High Voltage)
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRFR420 Siliconix Power MOSFET Instruction Manual

Power MOSFET

OVERVIEW

N-Channel MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
Surface-mount (IRFR420, SiHFR420)
Straight lead (IRFU420, SiHFU420)
Available in tape and reel
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

ORDERING INFORMATION

Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 2.4| A
TC = 100 °C| 1.5
Pulsed drain current a| IDM| 8.0
Linear derating factor| | 0.33| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 400| mJ
Repetitive avalanche current a| IAR| 2.4| A
Repetitive avalanche energy a| EAR| 4.2| mJ
Maximum power dissipation| TC = 25 °C| PD| 42| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 3.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 260

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 Ω, IAS = 2.4 A (see fig. 12)
c. ISD ≤ 2.4 A, dI/dt ≤ 50 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 110| °C/W
Maximum junction-to-ambient (PCB mount) a| RthJA| –| 50
Maximum junction-to-case (drain)| RthJC| –| 3.0

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.59| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID =1.4 A b| –| –| 3.0| L
Forward transconductance| gfs| VDS = 50 V, ID = 1.4 A| 1.5| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,f = 1.0 MHz, see fig. 5| –| 360| –| pF
Output capacitance| Coss| –| 92| –
Reverse transfer capacitance| Crss| –| 37| –
Total gate charge| Qg| VGS = 10 V| ID = 2.1 A, VDS = 400 V,see fig. 6 and 13 b| –| –| 19|

nC

Gate-source charge| Qgs| –| –| 3.3
Gate-drain charge| Qgd| –| –| 13
Turn-on delay time| td(on)| VDD = 250 V, ID = 2.1 A,Rg = 18 L, RD = 120 L, see fig. 10 b| –| 8.0| –|

ns

Rise time| tr| –| 8.6| –
Turn-off delay time| td(off)| –| 33| –
Fall time| tf| –| 16| –
Gate input resistance| Rg| f = 1 MHz, open drain| 1.8| –| 12.6| L
Internal drain inductance| LD| Between lead, D6 mm (0.25″) from package and center ofGdie contactS| –| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbolDshowing theintegral reverse Gp – n junction diodeS| –| –| 2.4| A
Pulsed diode forward current a| ISM| –| –| 8.0
Body diode voltage| VSD| TJ = 25 °C, IS = 2.4 A, VGS = 0 V b| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/μs b| –| 260| 520| ns
Body diode reverse recovery charge| Qrr| –| 0.70| 1.4| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Typical Output Characteristics, TC = 25 °C
Typical Output Characteristics, TC = 150 °C

TYPICAL CHARACTERISTICS

Typical Transfer Characteristics
Normalized On-Resistance vs. Temperature
Typical Capacitance vs. Drain-to-Source Voltage
Typical Gate Charge vs. Gate-to-Source Voltage
Typical Source-Drain Diode Forward Voltage
Maximum Safe Operating Area
Maximum Drain Current vs. Case Temperature
Switching Time Waveforms

TYPICAL CHARACTERISTICS TYPICAL
CHARACTERISTICS

Maximum Effective Transient Thermal Impedance, Junction-to-Case
Unclamped Inductive Test Circuit / Unclamped Inductive Waveforms / Maximum Avalanche Energy vs. Drain Current
Basic Gate Charge Waveform / Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Peak Diode Recovery

Driver gate drive

Driver gate drive \

VERSION 1: FACILITY CODE = Y

VERSION

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.38
A1| –| 0.127
b| 0.64| 0.88
b2| 0.76| 1.14
b3| 4.95| 5.46
C| 0.46| 0.61
C2| 0.46| 0.89
D| 5.97| 6.22
D1| 4.10| –
E| 6.35| 6.73
E1| 4.32| –
H| 9.40| 10.41
e| 2.28 BSC
e1| 4.56 BSC
L| 1.40| 1.78
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.01| 1.52

VERSION 2: FACILITY CODE = N

VERSION

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.39
A1| –| 0.13
b| 0.65| 0.89
b1| 0.64| 0.79
b2| 0.76| 1.13
b3| 4.95| 5.46
c| 0.46| 0.61
c1| 0.41| 0.56
c2| 0.46| 0.60
D| 5.97| 6.22
D1| 5.21| –
E| 6.35| 6.73
E1| 4.32| –
e| 2.29 BSC
H| 9.94| 10.34
| MILLIMETERS
---|---
DIM.| MIN.| MAX.
L| 1.50| 1.78
L1| 2.74 ref.
L2| 0.51 BSC
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.14| 1.49
L6| 0.65| 0.85
q| 0°| 10°
q1| 0°| 15°
q2| 25°| 35°

Notes

Dimensioning and tolerance confirm to ASME Y14.5M-1994
All dimensions are in millimeters. Angles are in degrees
Heat sink side flash is max. 0.8 mm
Radius on terminal is optional

Case Outline for TO-251AA (High Voltage)

OPTION

INSTRUCTION

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 2.18| 2.39| 0.086| 0.094| D1| 5.21| –| 0.205| –
A1| 0.89| 1.14| 0.035| 0.045| E| 6.35| 6.73| 0.250| 0.265
b| 0.64| 0.89| 0.025| 0.035| E1| 4.32| –| 0.170| –
b1| 0.65| 0.79| 0.026| 0.031| e| 2.29 BSC| 2.29 BSC
b2| 0.76| 1.14| 0.030| 0.045| L| 8.89| 9.65| 0.350| 0.380
b3| 0.76| 1.04| 0.030| 0.041| L1| 1.91| 2.29| 0.075| 0.090
b4| 4.95| 5.46| 0.195| 0.215| L2| 0.89| 1.27| 0.035| 0.050
c| 0.46| 0.61| 0.018| 0.024| L3| 1.14| 1.52| 0.045| 0.060
c1| 0.41| 0.56| 0.016| 0.022| q1| 0′| 15′| 0′| 15′
c2| 0.46| 0.86| 0.018| 0.034| q2| 25′| 35′| 25′| 35′
D| 5.97| 6.22| 0.235| 0.245|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Dimension are shown in inches and millimeters
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions b4, L2, E1 and D1
Lead dimension uncontrolled in L3
Dimension b1, b3 and c1 apply to base metal only
Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

INSTRUCTION

DIM.| MIN.| NOM.| MAX.| | DIM.| MIN.| NOM.| MAX.
---|---|---|---|---|---|---|---|---
A| 2.180| 2.285| 2.390| D2| 5.380| –| –
A1| 0.890| 1.015| 1.140| E| 6.350| 6.540| 6.730
b| 0.640| 0.765| 0.890| E1| 4.32| –| –
b1| 0.640| 0.715| 0.790| e| 2.29 BSC|
b2| 0.760| 0.950| 1.140| L| 8.890| 9.270| 9.650
b3| 0.760| 0.900| 1.040| L1| 1.910| 2.100| 2.290
b4| 4.950| 5.205| 5.460| L2| 0.890| 1.080| 1.270
c| 0.460| –| 0.610| L3| 1.140| 1.330| 1.520
c1| 0.410| –| 0.560| L4| 1.300| 1.400| 1.500
c2| 0.460| –| 0.610| q1| 0°| 7.5°| 15°
D| 5.970| 6.095| 6.220| q2| 4°| –| –
D1| 4.300| –| –|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
All dimension are in millimeters, angles are in degrees
Heat sink side flash is max. 0.8 mm

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

DIMENSION

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
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