VISHAY IRFRC20 Siliconix Power MOSFET Instruction Manual

VISHAY IRFRC20 Siliconix Power MOSFET Instruction Manual

Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFRC20, SiHFRC20)
• Straight lead (IRFUC20, SiHFUC20)
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

PRODUCT SUMMARY

VDS (V)| 600
RDS(on) (L)| VGS = 10 V| 4.4
Qg (Max.) (nC)| 18
Qgs (nC)| 3.0
Qgd (nC)| 8.9
Configuration| Single

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFUC, SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

ORDERING INFORMATION

Package| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| IPAK (TO-251)
Lead (Pb)-free and halogen-free| SiHFRC20-GE3| SiHFRC20TRL-GE3| SiHFRC20TR- GE3| SiHFRC20TRR-GE3| SiHFUC20-GE3
IRFRC20PbF-BE3| IRFRC20TRLPbF-BE3| IRFRC20TRPbF-BE3| IRFRC20TRRPbF-BE3| –
Lead (Pb)-free| IRFRC20PbF| IRFRC20TRLPbF a| IRFRC20TRPbF a| IRFRC20TRRPbF a| IRFUC20PbF

Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 2.0| A
TC = 100 °C| 1.3
Pulsed drain current a| IDM| 8.0
Linear derating factor| | 0.33| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 74| mJ
Repetitive avalanche current a| IAR| 2.0| A
Repetitive avalanche energy a| EAR| 4.2| mJ
Maximum power dissipation| TC = 25 °C| PD| 42| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 3.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s|  | 260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12)
c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 110| °C/W
Maximum junction-to-ambient (PCB mount) a| RthJA| –| –| 50
Maximum junction-to-case (drain)| RthJC| –| –| 3.0

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.88| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 600 V, VGS = 0 V| –| –| 100| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 1.2 Ab| –| –| 4.4| L
Forward transconductance| gfs| VDS = 50 V, ID = 1.2 A| 1.4| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = – 25 V,f = 1.0 MHz, see fig. 5| –| 350| –| pF
Output capacitance| Coss| –| 48| –
Reverse transfer capacitance| Crss| –| 8.6| –
Total gate charge| Qg| VGS = 10 V| ID = 2.0 A, VDS = 360 V,see fig. 6 and 13b| –| –| 18| nC
Gate-source charge| Qgs| –| –| 3.0
Gate-drain charge| Qgd| –| –| 8.9
Turn-on delay time| td(on)| VDD = 300 V, ID = 2.0 A,Rg = 18 L, RD = 135 L, see fig. 10b| –| 10| –| ns
Rise time| tr| –| 23| –
Turn-off delay time| td(off)| –| 30| –
Fall time| tf| –| 25| –
Internal drain inductance| LD| Between lead,6 mm (0.25″) from package and center of die contact| G| DS| | –| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reversep – n junction diode| G| | DS| –| –| 2.0| A
Pulsed diode forward current a| ISM| –| –| 8.0
Body diode voltage| VSD| TJ = 25 °C, IS = 2.0 A, VGS = 0 Vb | –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μsb| –| 290| 580| ns
Body diode reverse recovery charge| Qrr| –| 0.67| 1.3| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 1 – Typical Output Characteristics, TC = 150 °C

Fig. 2 – Typical Transfer Characteristics

Fig. 3 – Normalized On-Resistance vs. Temperature

Fig. 4 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 5 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 6 – Typical Source-Drain Diode Forward Voltage

Fig. 7 – Maximum Safe Operating Area

Fig. 8 – Maximum Drain Current vs. Case Temperature

Fig. 10a – Switching Time Test Circuit

Fig. 10b – Switching Time Waveforms

Fig. 12a – Unclamped Inductive Test Circuit

Fig. 12b – Unclamped Inductive Waveforms

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

Fig. 13a – Basic Gate Charge Waveform

Fig. 13b – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circui

Fig. 10 – For N-Channel

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.38
A1| –| 0.127
b| 0.64| 0.88
b2| 0.76| 1.14
b3| 4.95| 5.46
C| 0.46| 0.61
C2| 0.46| 0.89
D| 5.97| 6.22
D1| 4.10| –
E| 6.35| 6.73
E1| 4.32| –
H| 9.40| 10.41
e| 2.28 BSC
e1| 4.56 BSC
L| 1.40| 1.78
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.01| 1.52

Note

• Dimension L3 is for reference only

VERSION 2: FACILITY CODE = N

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.39
A1| –| 0.13
b| 0.65| 0.89
b1| 0.64| 0.79
b2| 0.76| 1.13
b3| 4.95| 5.46
c| 0.46| 0.61
c1| 0.41| 0.56
c2| 0.46| 0.60
D| 5.97| 6.22
D1| 5.21| –
E| 6.35| 6.73
E1| 4.32| –
e| 2.29 BSC
H| 9.94| 10.34
| MILLIMETERS
---|---
DIM.| MIN.| MAX.
L| 1.50| 1.78
L1| 2.74 ref.
L2| 0.51 BSC
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.14| 1.49
L6| 0.65| 0.85
q| 0°| 10°
q1| 0°| 15°
q2| 25°| 35°

Notes

• Dimensioning and tolerance confirm to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• Radius on terminal is optional

ECN: E22-0399-Rev. R, 03-Oct-2022
DWG: 5347

Case Outline for TO-251AA (High Voltage)

OPTION 1:

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 2.18| 2.39| 0.086| 0.094
A1| 0.89| 1.14| 0.035| 0.045
b| 0.64| 0.89| 0.025| 0.035
b1| 0.65| 0.79| 0.026| 0.031
b2| 0.76| 1.14| 0.030| 0.045
b3| 0.76| 1.04| 0.030| 0.041
b4| 4.95| 5.46| 0.195| 0.215
c| 0.46| 0.61| 0.018| 0.024
c1| 0.41| 0.56| 0.016| 0.022
c2| 0.46| 0.86| 0.018| 0.034
D| 5.97| 6.22| 0.235| 0.245

| MILLIMETERS| INCHES
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
D1| 5.21| –| 0.205| –
E| 6.35| 6.73| 0.250| 0.265
E1| 4.32| –| 0.170| –
e| 2.29 BSC| 2.29 BSC
L| 8.89| 9.65| 0.350| 0.380
L1| 1.91| 2.29| 0.075| 0.090
L2| 0.89| 1.27| 0.035| 0.050
L3| 1.14| 1.52| 0.045| 0.060
q1| 0′| 15′| 0′| 15′
q2| 25′| 35′| 25′| 35′
ECN: E21-0682-Rev. C, 27-Dec-2021
DWG : 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension are shown in inches and millimeters
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

ECN: E21-0682-Rev. C, 27-Dec-2021
DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• All dimension are in millimeters, angles are in degrees
• Heat sink side flash is max. 0.8 mm

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

Recommended Minimum Pads Dimensions in Inches/(mm)

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons  acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.

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or technical questions, contact: hvmos.techsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revision: 27-Dec-2021

Document Number: 91362

References

• applications.no
• IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Power MOSFET | Vishay

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