VISHAY SiHG20N50C Power MOSFET Owner’s Manual
- June 9, 2024
- VISHAY
Table of Contents
VISHAY SiHG20N50C Power MOSFET
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.| 560
RDS(on) (Ù)| VGS = 10 V| 0.270
Qg max. (nC)| 76
Qgs (nC)| 21
Qgd (nC)| 34
Configuration| Single
FEATURES
- Low figure-of-merit Ron x Qg
- 100 % avalanche tested
- High peak current capability
- dv/dt ruggedness
- Improved Trr/Qrr
- Improved gate charge
- High power dissipations capability
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
ORDERING INFORMATION
Package| TO-247AC
Lead (Pb)-free| SiHG20N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C) a| VGS at 10 V| TC = 25 °C| ID| 20|
A
TC = 100 °C| 11
Pulsed drain current b| IDM| 80
Linear derating factor| | 1.8| W/°C
Single pulse avalanche energy c| EAS| 361| mJ
Maximum power dissipation| PD| 250| W
Reverse diode dV/dt d| dV/dt| 5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Notes
a. Limited by maximum junction temperature
b. Repetitive rating; pulse width limited by maximum junction temperature
c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A
d. ISD ≤ 18 A, di/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
e. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.7|
–| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –|
5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 10 A| –| 0.225|
0.270| Ù
Forward transconductance| gfs| VDS = 50 V, ID = 10 A| –| 6.4| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1 MHz
| –| 2451| 2942|
pF
Output capacitance| Coss| –| 300| 360
Reverse transfer capacitance| Crss| –| 26| 32
Total gate charge| Qg| VGS = 10 V| ID = 18 A, VDS = 400 V| –| 65| 76|
nC
Gate-source charge| Qgs| –| 21| –
Gate-drain charge| Qgd| –| 29| –
Turn-on delay time| td(on)| VDD = 250 V, ID = 18 A, Rg = 9.1 Ù| –| 80| –|
ns
Rise time| tr| –| 27| –
Turn-off delay time| td(off)| –| 32| –
Fall time| tf| –| 44| –
Gate input resistance| Rg| f = 1 MHz, open drain| –| 1.1| –| Ù
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral
reverse p – n junction diode
| –| –| 20|
A
Pulsed diode forward current| ISM| –| –| 80
Diode forward voltage| VSD| TJ = 25 °C, IS = 18 A, VGS = 0 V| –| –| 1.5| V
Reverse recovery time| trr| TJ = 25 °C, IF = IS, di/dt = 100 A/μs, V = 35 V R|
–| 503| –| ns
Reverse recovery charge| Qrr| –| 6.7| –| μC
Reverse recovery current| IRRM| –| 30| –| A
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91382.
TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|
Notes
- Package reference: JEDEC® TO247, variation AC
- All dimensions are in mm
- Slot required, notch may be rounded
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition
VERSION 2: FACILITY CODE = Y
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.|
NOTES
A
| 4.58| 5.31|
A1| 2.21|
2.59
|
A2
| 1.17| 2.49|
b| 0.99|
1.40
|
b1
| 0.99| 1.35|
b2| 1.53|
2.39
|
b3
| 1.65| 2.37|
b4
| 2.42| 3.43|
b5| 2.59|
3.38
|
c
| 0.38| 0.86|
c1| 0.38|
0.76
|
D
| 19.71| 20.82|
D1| 13.08|
–
|
| MILLIMETERS|
---|---|---
DIM.
| MIN.| MAX.| NOTES
D2
| 0.51|
1.30
|
E| 15.29|
15.87
|
E1
| 13.72| –|
e|
5.46 BSC
|
Ø k
| 0.254|
L| 14.20|
16.25
|
L1
| 3.71| 4.29|
Ø P| 3.51|
3.66
|
Ø P1
| –| 7.39|
Q| 5.31|
5.69
|
R
| 4.52| 5.49|
S|
5.51 BSC
|
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
- Outline conforms to JEDEC outline TO-247 with exception of dimension c
VERSION 3: FACILITY CODE = N
| MILLIMETERS
---|---
DIM.| MIN.|
MAX.
A
| 4.65| 5.31
A1| 2.21|
2.59
A2
| 1.17| 1.37
b| 0.99|
1.40
b1
| 0.99| 1.35
b2| 1.65|
2.39
b3
| 1.65| 2.34
b4| 2.59|
3.43
b5
| 2.59| 3.38
c|
0.38
|
0.89
c1
| 0.38| 0.84
D| 19.71|
20.70
D1
| 13.08|
–
D2 | 0.51 | 1.35 |
---|---|---|
E | 15.29 | 15.87 |
E1 | 13.46 | – |
e | 5.46 BSC | |
k | 0.254 | |
L | 14.20 | 16.10 |
L1 | 3.71 | 4.29 |
N | 7.62 BSC | |
P | 3.56 | 3.66 |
P1 | – | 7.39 |
Q | 5.31 | 5.69 |
R | 4.52 | 5.49 |
S | 5.51 BSC |
ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Contour of slot optional
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions D1 and E1
- Lead finish uncontrolled in L1
- Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
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