VISHAY SiHG20N50C Power MOSFET Owner’s Manual

: June 9, 2024
: VISHAY

Table of Contents

Power MOSFET
- FEATURES
TYPICAL CHARACTERISTICS
- Peak Diode Recovery dV/dt Test Circuit
TO-247AC (High Voltage)
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY SiHG20N50C Power MOSFET

SiHG20N50C Power MOSFET

Power MOSFET

PRODUCT SUMMARY

FEATURES

Low figure-of-merit Ron x Qg
100 % avalanche tested
High peak current capability
dv/dt ruggedness
Improved Trr/Qrr
Improved gate charge
High power dissipations capability
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| SiHG20N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C) a| VGS at 10 V| TC = 25 °C| ID| 20|

A

TC = 100 °C| 11
Pulsed drain current b| IDM| 80
Linear derating factor| | 1.8| W/°C
Single pulse avalanche energy c| EAS| 361| mJ
Maximum power dissipation| PD| 250| W
Reverse diode dV/dt d| dV/dt| 5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300

Notes
a. Limited by maximum junction temperature
b. Repetitive rating; pulse width limited by maximum junction temperature
c. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 17 A
d. ISD ≤ 18 A, di/dt ≤ 380 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
e. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.7| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 10 A| –| 0.225| 0.270| Ù
Forward transconductance| gfs| VDS = 50 V, ID = 10 A| –| 6.4| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1 MHz

| –| 2451| 2942|

pF

Output capacitance| Coss| –| 300| 360
Reverse transfer capacitance| Crss| –| 26| 32
Total gate charge| Qg| VGS = 10 V| ID = 18 A, VDS = 400 V| –| 65| 76|

nC

Gate-source charge| Qgs| –| 21| –
Gate-drain charge| Qgd| –| 29| –
Turn-on delay time| td(on)| VDD = 250 V, ID = 18 A, Rg = 9.1 Ù| –| 80| –|

ns

Rise time| tr| –| 27| –
Turn-off delay time| td(off)| –| 32| –
Fall time| tf| –| 44| –
Gate input resistance| Rg| f = 1 MHz, open drain| –| 1.1| –| Ù
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p – n junction diode
| –| –| 20|

A

Pulsed diode forward current| ISM| –| –| 80
Diode forward voltage| VSD| TJ = 25 °C, IS = 18 A, VGS = 0 V| –| –| 1.5| V
Reverse recovery time| trr| TJ = 25 °C, IF = IS, di/dt = 100 A/μs, V = 35 V R| –| 503| –| ns
Reverse recovery charge| Qrr| –| 6.7| –| μC
Reverse recovery current| IRRM| –| 30| –| A

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Typical Characteristics

Peak Diode Recovery dV/dt Test Circuit

Typical Characteristics

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91382.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

Typical Characteristics

| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

Package reference: JEDEC® TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

Typical Characteristics

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.|

NOTES

A

| 4.58| 5.31|
A1| 2.21|

2.59

|

A2

| 1.17| 2.49|
b| 0.99|

1.40

|

b1

| 0.99| 1.35|
b2| 1.53|

2.39

|

b3

| 1.65| 2.37|

b4

| 2.42| 3.43|

b5| 2.59|

3.38

|

c

| 0.38| 0.86|
c1| 0.38|

0.76

|

D

| 19.71| 20.82|
D1| 13.08|

–

|
| MILLIMETERS|
---|---|---

DIM.

| MIN.| MAX.| NOTES

D2

| 0.51|

1.30

|
E| 15.29|

15.87

|

E1

| 13.72| –|
e|

5.46 BSC

|

Ø k

| 0.254|
L| 14.20|

16.25

|

L1

| 3.71| 4.29|
Ø P| 3.51|

3.66

|

Ø P1

| –| 7.39|
Q| 5.31|

5.69

|

R

| 4.52| 5.49|
S|

5.51 BSC

|

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

Typical Characteristics

| MILLIMETERS
---|---
DIM.| MIN.|

MAX.

A

| 4.65| 5.31
A1| 2.21|

2.59

A2

| 1.17| 1.37
b| 0.99|

1.40

b1

| 0.99| 1.35
b2| 1.65|

2.39

b3

| 1.65| 2.34
b4| 2.59|

3.43

b5

| 2.59| 3.38
c|

0.38

|

0.89

c1

| 0.38| 0.84
D| 19.71|

20.70

D1

| 13.08|

–

D2	0.51	1.35
E	15.29	15.87
E1	13.46	–
e	5.46 BSC
k	0.254
L	14.20	16.10
L1	3.71	4.29
N	7.62 BSC
P	3.56	3.66
P1	–	7.39
Q	5.31	5.69
R	4.52	5.49
S	5.51 BSC

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971
Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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