VISHAY IRFPE50 Power MOSFET Owner’s Manual

: June 9, 2024
: VISHAY

Table of Contents

D Series Power MOSFET
- FEATURES
- DESCRIPTION
TYPICAL CHARACTERISTICS
- Peak Diode Recovery dV/dt Test Circuit
TO-247AC (High Voltage)
Disclaimer
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRFPE50 Power MOSFET

IRFPE50 Power MOSFET

D Series Power MOSFET

Power MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rated
Repetitive avalanche rated
Isolated central mounting hole
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFPE50PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

V

Gate-source Voltage| VGS| ± 30
Gate-source voltage AC (f > 1 Hz)| 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 8.7|

A

TC = 100 °C| 5.5
Pulsed drain current a| IDM| 18
Linear derating factor| | 1.25| W/°C
Single pulse avalanche energy b| EAS| 56| mJ
Maximum power dissipation| PD| 156| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 24| V/ns
Reverse diode dV/dt d| 0.37
Soldering recommendations (peak temperature) c| For 10 s| | 300| °C

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 7 A
c. 1.6 mm from case
d. ISD ≤ ID, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.65
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 800| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.98| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA

Zero gate voltage drain current

| IDSS| VDS = 800 V, VGS = 0 V| –| –| 100|

μA

VDS = 640 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 4.7 A b| –| –| 1.2| Ù
Forward transconductance| gfs| VDS = 100 V, ID = 4.7 A b| 5.6| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5| –| 3100| –|

pF

Output capacitance| Coss| –| 800| –
Reverse transfer capacitance| Crss| –| 490| –
Total gate charge| Qg| VGS = 10 V| ID = 7.8 A, VDS = 400 V, see fig. 6 and 13 b| –| –| 200|

nC

Gate-source charge| Qgs| –| –| 24
Gate-drain charge| Qgd| –| –| 110
Turn-on delay time| td(on)| VDD = 400 V, ID = 7.8 A, Rg = 6.2 Ù, RD= 52 Ù see fig. 10 b| –| 19| –|

ns

Rise time| tr| –| 38| –
Turn-off delay time| td(off)| –| 120| –
Fall time| tf| –| 39| –
Internal drain inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact
| –| 5.0| –|

nH

Internal source inductance| LS| –| 13| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbols owing the integral reverse p – n junction diode
| –| –| 7.8|

A

Pulsed diode forward current a| ISM| –| –| 31
Body diode voltage| VSD| TJ = 25 °C, IS = 7.8 A, VGS = 0 V b| –| –| 1.8| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 7.8 A,

dI/dt = 100 A/μs b

| –| 650| 980| ns
Body diode reverse recovery charge| Qrr| –| 3.8| 5.7| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)
Typical Characteristics

Typical Characteristics

Peak Diode Recovery dV/dt Test Circuit

Typical Characteristics

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91521.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

$To-247ac $High Voltage$$

| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.|

NOTES

A

| 4.83| 5.02| 5.21|
A1| 2.29| 2.41|

2.55

|

A2

| 1.17| 1.27| 1.37|
b| 1.12| 1.20|

1.33

|

b1

| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39|

6

b3

| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22|

6, 8

b5

| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60|

6

c1

| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70|

4

D1

| 16.46| 16.76| 17.06| 5

D2

| 0.56| 0.66|

0.76

|
E| 15.50| 15.70|

15.87

| 4

E1

| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49|

3

e

| 5.46 BSC|
L| 14.90| 15.15|

15.40

|

L1

| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65|

7

Ø P1

| 7.19 ref.|
Q| 5.31| 5.50|

5.69

|

S

|

5.51 BSC

|

Notes

Package reference: JEDEC® TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the
outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

$To-247ac $High Voltage$$

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.|

NOTES

A

| 4.58| 5.31|
A1| 2.21|

2.59

|

A2

| 1.17| 2.49|
b| 0.99|

1.40

|

b1

| 0.99| 1.35|
b2| 1.53|

2.39

|

b3

| 1.65| 2.37|
b4| 2.42|

3.43

|

b5

| 2.59| 3.38|
c| 0.38|

0.86

|

c1

| 0.38| 0.76|
D| 19.71|

20.82

|

D1

| 13.08| –|
D2| 0.51|

1.30

|

E

| 15.29| 15.87|
E1| 13.72|

–

|

e

| 5.46 BSC|
Ø k|

0.254

|

L

| 14.20| 16.25|
L1| 3.71|

4.29

|
Ø P|

3.51

| 3.66|

Ø P1

| –|

7.39

|

Q

| 5.31| 5.69|
R| 4.52|

5.49

|

S

|

5.51 BSC

|

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

$To-247ac $High Voltage$$

| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.|

MAX.

A

| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29|

15.87

A2

| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e|

5.46 BSC

b1

| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L|

14.20

|

16.10

b3

| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N|

7.62 BSC

b5

| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –|

7.39

c1

| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52|

5.49

D1

| 13.08| –| S| 5.51 BSC

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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