VISHAY IRF740AS Power MOSFET Owner’s Manual

VISHAY IRF740AS Power MOSFET

Power MOSFET

FEATURES

• Low gate charge Qg results in cimple drive requirement

• Improved gate, avalanche, and dynamic dV/d t ruggedness

• Fully characterized capacitance and avalanch e voltage and current

• Effective Coss specified

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
  Note

  • This datasheet provides information about parts that RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)
• Uninterruptible power supply
• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Single transistor flyback Xfmr. reset
• Single transistor forward Xfmr. reset (both for US line input only)

PRODUCT SUMMARY

ORDERING INFORMATION

ORDERING INFORMATION

Package| D2PAK (TO-263)| D2PAK (TO-263)| D2PAK (TO-263)| I2PAK (TO-262)
Lead (Pb)-free and Halogen-free| SiHF740AS-GE3| SiHF740ASTRL-GE3a| SiHF740ASTRR-GE3a| SiHF740AL-GE3
Lead (Pb)-free| IRF740ASPbF| IRF740ASTRLPbFa| IRF740ASTRRPbFa| IRF740ALPbF

Note
a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 400| V
Gate-Source Voltage| VGS| ± 30
Continuous Drain Currente| VGS at 10 V| TC = 25 °C| ID| 10|

A

TC = 100 °C| 6.3
Pulsed Drain Currenta, e| IDM| 40
Linear Derating Factor|  | 1.0| W/°C
Single Pulse Avalanche Energyb, e| EAS| 630| mJ
Avalanche Currenta| IAR| 10| A
Repetiitive Avalanche Energya| EAR| 12.5| mJ
Maximum Power Dissipation| TA = 25 °C| PD| 3.1| W
TC = 25 °C| 125
Peak Diode Recovery dV/dtc, e| dV/dt| 5.9| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Soldering Recommendations (Peak Temperature)| for 10 s|  | 300d

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Starting TJ = 25 °C, L = 12.6 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)
• ISD ≤ 10 A, dI/dt ≤ 330 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case
• Uses IRF740A, SiHF740A data and test conditions

THERMAL RESISTANCE RATINGS

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material).

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
• Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
• Uses IRF740A, SiHF740A data and test conditions.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Note
a. VGS = 5 V for logic level devices

TO-263AB (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

Disclaimer

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Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91052.
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References

• applications.no
• IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Power MOSFET | Vishay

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