VISHAY Si2304BDS N Channel 30 V MOSFET Owner’s Manual

: September 28, 2024
: VISHAY

Table of Contents

Si2304BDS N Channel 30 V MOSFET
Specifications:
Product Usage Instructions:
Features:
Operating Conditions:
Thermal Resistance Ratings:
Parameter Details:
For more information:
- FAQ:
Q: What are the typical values for RDS(on) at different
Q: What is the maximum continuous source current supported by

Si2304BDS N Channel 30 V MOSFET

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Specifications:

Product: N-Channel 30V (D-S) MOSFET
Model: Si2304BDS
Brand: Vishay Siliconix
VDS (V): 30
RDS(on) (Ω):
- 0.070 at VGS = 10 V
- 0.105 at VGS = 4.5 V
ID (A):
- 3.2 at VGS = 2.6
- 2.6 at VGS = 2.1
Qg (Typ.): 2.6

Product Usage Instructions:

Features:

TO-236 (SOT-23) package with G1 and S2 pins, top view Si2304BDS
(L4) marking code.

Operating Conditions:

Steady State Drain-Source Voltage (VDS): 30V

Gate-Source Voltage (VGS): 2.6V to 3.2V

Thermal Resistance Ratings:

Maximum Junction-to-Ambient: 115°C/W

Maximum Junction-to-Foot (Drain): 166°C/W

Parameter Details:

Static Drain-Source Breakdown Voltage: 30V

Gate-Threshold Voltage: 1.5V to 3V

Zero Gate Voltage Drain Current: 0.5nA to 10nA

For more information:

Visit Vishay’s SPICE model
information page

FAQ:

Q: What are the typical values for RDS(on) at different

gate-source voltages?

A: The typical values for RDS(on) are 0.070Ω at VGS = 10V and
0.105Ω at VGS = 4.5V.

Q: What is the maximum continuous source current supported by

the MOSFET?

A: The MOSFET supports a maximum continuous source current of
2.6A.

“`

N-Channel 30 V (D-S) MOSFET

Si2304BDS
Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 30

RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V

ID (A) 3.2 2.6

Qg (Typ.) 2.6

FEATURES
· Halogen-free According to IEC 61249-2-21 Definition
· TrenchFET® Power MOSFET · 100 % Rg Tested · Compliant to RoHS Directive 2002/95/EC

TO-236 (SOT-23)

G1 S2

3D

Top View Si2304BDS (L4) Marking Code
Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free) Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

5 s

Steady State

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)a, b

TA = 25 °C TA = 70 °C

ID

3.2

2.6

2.5

2.1

Pulsed Drain Current

IDM

10

Continuous Source Current (Diode Conduction)a, b

IS

0.9

0.62

Maximum Power Dissipationa, b

TA = 25 °C TA = 70 °C

PD

1.08

0.75

0.69

0.48

Operating Junction and Storage Temperature Range

TJ, Tstg

– 55 to 150

THERMAL RESISTANCE RATINGS

Parameter Maximum Junction-to-Ambienta

t 5 s Steady State

Maximum Junction-to-Foot (Drain)

Steady State

Notes: a. Surface mounted on FR4 board, t 5 s. b. Pulse width limited by maximum junction temperature. c. Surface mounted on FR4 board.

Symbol RthJA RthJF

Typical 90 130 60

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Maximum 115 166 75

Unit V
A
W °C
Unit °C/W

Document Number: 72503

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Si2304BDS
Vishay Siliconix

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate- Body Leakage

Symbol
V(BR)DSS VGS(th)
IGSS

Zero Gate Voltage Drain Current

IDSS

On-State Drain Currenta

ID(on)

Drain-Source On-Resistancea

RDS(on)

Forward Transconductancea

gfs

Diode Forward Voltage

VSD

Dynamic

Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching

Qg Qgt Qgs Qgd Rg Ciss Coss Crss

Turn-On Delay Time

td(on)

Rise Time

tr

Turn-Off Delay Time

td(off)

Fall Time

tf

Notes:

a. Pulse test: PW 300 µs, duty cycle 2 %.

Test Conditions
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C VDS = 30 V, VGS = 1 V, TJ = 25 °C VDS 4.5 V, VGS = 10 V VGS = 10 V, ID = 2.5 A
VGS = 4.5 V, ID = 2 A VDS = 4.5 V, ID = 2.5 A IS = 1.25 A, VGS = 0 V
VDS = 15 V, VGS = 5 V, ID = 2.5 A
VDS = 15 V, VGS = 10 V, ID = 2.5 A
f = 1 MHz
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6

Limits

Min.

Typ.

Max.

Unit

30

V

1.5

3

± 100

nA

0.5

10

µA

1

6

A

0.055 0.070
0.080 0.105

6

S

0.8

1.2

V

2.6

4

4.6

7

nC

0.8

1.15

0.6

3

6

225

50

pF

28

7.5

12

12.5

20

ns

19

30

15

25

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

10

VGS = 10 thru 5 V

8

I D – Drain Current (A) I D – Drain Current (A)

6

4 4 V

2

3 V 0

0

2

4

6

8

10

VDS – Drain-to-Source Voltage (V)

Output Characteristics

4 TC = 125 °C

2 25 °C

– 55 °C

0

1

2

3

4

5

VGS – Gate-to-Source Voltage (V)

Transfer Characteristics

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.24

350

R DS(on) –

0.20

0.16

0.12 0.08 0.04

VGS = 4.5 V

VGS = 10 V

0.00 0

2

4

6

8

10

ID – Drain Current (A)

On-Resistance vs. Drain Current

C – Capacitance (pF)

300

250

Ciss

200

150

100 50 Crss

Coss

0

5

10

15

20

25

30

VDS – Drain-to-Source Voltage (V)

Capacitance

10
VDS = 15 V ID = 2.5 A 8

1.6
VGS = 10 V ID = 2.5 A 1.4

RDS(on) – On-Resistance (Normalized)

VGS – Gate-to-Source Voltage (V)

6

1.2

4

1.0

2

0.8

0

1

2

3

4

5

Qg – Total Gate Charge (nC)

Gate Charge

10

TJ = 150 °C 1

0.1

TJ = 25 °C

0.01

R DS(on) –

0.6 – 50 – 25 0

25 50 75 100 125 150

TJ – Junction Temperature (°C)

On-Resistance vs. Junction Temperature

0.20

0.16

ID = 2.5 A

0.12

0.08

0.04

I S – Source Current (A)

0.001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD – Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.00 0

2

4

6

8

10

VGS – Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

Document Number: 72503

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Si2304BDS
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

0.4

10

VGS(th) Variance (V) Power (W)

0.2

8

ID = 250 µA

0.0 6

– 0.2
4 – 0.4

– 0.6

2

TA = 25 °C Single Pulse

– 0.8 – 50 – 25

0 25 50 75 100 125 150 TJ – Temperature (°C)
Threshold Voltage

0 0.01

0.1

1

10

100 600

Time (s)

Single Pulse Power

I D – Drain Current (A)

100 Limited by RDS(on)*
10

IDM Limited

10 µs 100 µs

1 1 ms

10 ms

0.1

TA = 25 °C Single Pulse

100 ms

DC, 100 s, 10 s, 1 s

0.01

BVDSS Limited

0.1

1

10

100

VDS – Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area

2
1 Duty Cycle = 0.5

Normalized Effective Transient Thermal Impedance

0.2 0.1 0.1 0.05 0.02
0.0110- 4

Notes:

PDM

Single Pulse 10- 3

10- 2

10- 1

1

Square Wave Pulse Duration (s)

t1

t2 1. Duty Cycle, D =

t1 t2

2. Per Unit Base = R thJA = 130 °C/W

3. T JM – TA = PDMZthJA(t)

4. Surface Mounted

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72503.

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Document Number: 72503

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SOT-23 (TO-236): 3-LEAD
b

Package Information
Vishay Siliconix

3

E1 E

1

2

S

A

A2

A1

e e1
D

0.10 mm C

0.004″

C

Seating Plane C

q
L L1

0.25 mm
Gauge Plane Seating Plane

Dim
A A1 A2 b c D E E1 e e1 L L1 S q ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479

MILLIMETERS

Min

Max

0.89

1.12

0.01

0.10

0.88

1.02

0.35

0.50

0.085

0.18

2.80

3.04

2.10

2.64

1.20

1.40

0.95 BSC

1.90 BSC

0.40

0.60

0.64 Ref

0.50 Ref

3°

8°

Min
0.035 0.0004 0.0346 0.014 0.003 0.110 0.083 0.047
0.016
3°

INCHES
0.0374 Ref 0.0748 Ref 0.025 Ref 0.020 Ref

Max
0.044 0.004 0.040 0.020 0.007 0.120 0.104 0.055
0.024
8°

Document Number: 71196 09-Jul-01
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RECOMMENDED MINIMUM PADS FOR SOT-23

Application Note 826
Vishay Siliconix

0.037 (0.950)

0.022 (0.559)

0.049 (1.245)

0.106 (2.692)

0.029 (0.724)

Return to Index Return to Index

0.053 (1.341)
0.097 (2.459)
Recommended Minimum Pads Dimensions in Inches/(mm)

APPLICATION NOTE

Document Number: 72609 Revision: 21-Jan-08
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Revision: 01-Jul-2024

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Document Number: 91000

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