VISHAY Si2304BDS-T1-E3 N Channel 30 Mosfet Owner’s Manual
- September 12, 2024
- VISHAY
Table of Contents
VISHAY Si2304BDS-T1-E3 N Channel 30 Mosfet
Specifications:
- Product Name: Si2304BDS
- Manufacturer: Vishay Siliconix
- VDS (V): 30
- RDS(on) (Ω): 0.070 at VGS = 10 V, 0.105 at VGS = 4.5 V
- ID (A): 3.2, 2.6
- Qg (Typ.): 2.6
- Package: TO-236 (SOT-23)
Product Usage Instructions
Overview:
The Si2304BDS is an N-Channel MOSFET with a maximum drain-source Voltage of 30V and various operating characteristics.
Important Parameters:
- Static Drain-Source Breakdown Voltage (V(BR)DSS): Min. 30V
- Gate Threshold Voltage (VGS(th)): Typ. 1.5V – Max. 3V
- On-State Drain Current (ID(on)): Typ. 0.055Ω – Max. 0.105Ω
Usage Steps:
- Ensure proper handling to avoid electrostatic discharge.
- Connect the MOSFET as per the circuit requirements, observing correct polarity.
- Apply the appropriate Gate-Source Voltage (VGS) and Drain-Source Voltage (VDS).
- Monitor the drain current and voltage to ensure it operates within the specified limits.
FAQ
- Q: What is the maximum operating temperature range for Si2304BDS?
- A: The operating Junction and Storage Temperature Range is -55°C to 150°C.
- Q: What is the Gate Charge for Si2304BDS?
- A: The typical Gate Charge (Qg) is 2.6nC.
- Q: How should I mount Si2304BDS for best thermal performance?
- A: Surface mount it on an FR4 board for optimal thermal dissipation.
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V DS (V)| R DS(on) ( W )| I D (A)|
Q g (Typ.)
30| 0.070 at VGS = 10 V| 3.2| 2.6
0.105 at VGS = 4.5 V| 2.6
- Ordering Information: Si2304BDS-T1-E3 (Lead (Pb)-free)
- Si2304BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
RATINGS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter| Symbol| 5 s| Steady State| Unit
Drain-Source Voltage| VDS| 30| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current (TJ = 150 °C)a, b| TA = 25 °C| ID| 3.2| 2.6|
A
TA = 70 °C| 2.5| 2.1
Pulsed Drain Current| IDM| 10
Continuous Source Current (Diode Conduction)a, b| IS| 0.9| 0.62
Maximum Power Dissipationa, b| TA = 25 °C| PD| 1.08| 0.75| W
TA = 70 °C| 0.69| 0.48
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to 150| °C
THERMAL RESISTANCE RATINGS
Parameter| Symbol| Typical| Maximum| Unit
Maximum Junction-to-Ambienta| t £ 5 s| RthJA| 90| 115|
°C/W
Steady State| 130| 166
Maximum Junction-to-Foot (Drain)| Steady State| RthJF| 60| 75
Notes:
- a. Surface mounted on FR4 board, t ≤ 5 s.
- b. Pulse width limited by maximum junction temperature.
- c. Surface mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
SPECIFICATIONS
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
Parameter
|
Symbol
|
Test Conditions
| Limits|
Unit
Min.| Typ.| Max.
Static
Drain-Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 µA| 30| | | V
Gate-Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 µA| 1.5| | 3
Gate-Body Leakage| IGSS| VDS = 0 V, VGS = ± 20 V| | | ± 100| nA
Zero Gate Voltage Drain Current
|
IDSS
| VDS = 30 V, VGS = 0 V| | | 0.5|
µA
VDS = 30 V, VGS = 0 V, TJ = 55 °C| | | 10
VDS = 30 V, VGS = 1 V, TJ = 25 °C| | | 1
On-State Drain Currenta| ID(on)| VDS ³ 4.5 V, VGS = 10 V| 6| | | A
Drain-Source On-Resistancea| RDS(on)| VGS = 10 V, ID = 2.5 A| | 0.055| 0.070|
W
VGS = 4.5 V, ID = 2 A| | 0.080| 0.105
Forward Transconductance| gfs| VDS = 4.5 V, ID = 2.5 A| | 6| | S
Diode Forward Voltage| VSD| IS = 1.25 A, VGS = 0 V| | 0.8| 1.2| V
Dynamic
Gate Charge| Qg| VDS = 15 V, VGS = 5 V, ID = 2.5 A| | 2.6| 4|
nC
Total Gate Charge| Qgt|
VDS = 15 V, VGS = 10 V, ID = 2.5 A
| | 4.6| 7
Gate-Source Charge| Qgs| | 0.8|
Gate-Drain Charge| Qgd| | 1.15|
Gate Resistance| Rg| f = 1 MHz| 0.6| 3| 6| W
Input Capacitance| Ciss|
VDS = 15 V, VGS = 0 V, f = 1 MHz
| | 225| |
pF
Output Capacitance| Coss| | 50|
Reverse Transfer Capacitance| Crss| | 28|
Switching
Turn-On Delay Time| td(on)|
VDD = 15 V, RL = 15 W
ID @ 1 A, VGEN = 10 V, Rg = 6 W
| | 7.5| 12|
ns
Rise Time| tr| | 12.5| 20
Turn-Off Delay Time| td(off)| | 19| 30
Fall Time| tf| | 15| 25
Notes:
- a. Pulse test: PW ≤ 300 μs, duty cycle≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72503.
SOT-23 (TO-236): 3-LEAD
| Dim | MILLIMETERS | INCHES |
|---|---|---|
| Min | Max | Min |
| A | 0.89 | 1.12 |
| A 1 | 0.01 | 0.10 |
| A 2 | 0.88 | 1.02 |
| b | 0.35 | 0.50 |
| c | 0.085 | 0.18 |
| D | 2.80 | 3.04 |
| E | 2.10 | 2.64 |
| E 1 | 1.20 | 1.40 |
| e | 0.95 BSC | 0.0374 Ref |
| e 1 | 1.90 BSC | 0.0748 Ref |
| L | 0.40 | 0.60 |
| L 1 | 0.64 Ref | 0.025 Ref |
| S | 0.50 Ref | 0.020 Ref |
| q | 3° | 8° |
ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479
RECOMMENDED MINIMUM PADS FOR SOT-23
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Revision: 01-Jul-2024 1 Document Number: 91000 For technical questions, contact: THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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References
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