VISHAY IRF740S SiHF740S Power Mosfet Owner’s Manual

: September 11, 2024
: VISHAY

Table of Contents

VISHAY IRF740S SiHF740S Power Mosfet
Product Information
Product Usage Instructions
PRODUCT SUMMARY
FEATURES
DESCRIPTION
TYPICAL CHARACTERISTICS
TO-263AB (HIGH VOLTAGE)
RECOMMENDED MINIMUM
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRF740S SiHF740S Power Mosfet

Product Information

Specifications

Brand: Vishay Siliconix
Product Name: IRF740S, SiHF740S Power MOSFET
Package Type: D2PAK (TO-263)
Channel Type: N-Channel MOSFET
Drain-Source Voltage (VDS): 400V
On-State Resistance (RDS(on)): 9.0 Ohms
Gate Charge (Qg) max.: 32 nC
Total Gate Charge (Qg) (single): 0.55 nC

Description

The IRF740S, SiHF740S Power MOSFET by Vishay Siliconix is a high-performance N-Channel MOSFET designed for various power applications with a drain-source voltage of 400V and a low on-state resistance of 9.0 Ohms.

Thermal Resistance Ratings

Maximum Junction-to-Ambient: 62°C/W (Typical), 40°C/W (Maximum)
Maximum Junction-to-Case (Drain): 1.0°C/W

Product Usage Instructions

Installation

Ensure proper orientation of the device according to the datasheet.
Mount the MOSFET on a suitable PCB material like FR-4 or G-10 for optimal thermal performance.
Observe soldering recommendations for peak temperature and duration during installation.

Operation

Apply a gate-source voltage within the specified range for proper operation (e.g., VGS = 10V).
Control the drain-source current within the continuous and pulsed limits mentioned in the specifications.
Monitor the temperature of the device during operation to prevent overheating.

Maintenance

Regularly inspect the device for any physical damage or signs of wear.
Keep the MOSFET clean and free from debris or contaminants that may affect performance.
Replace the MOSFET if it fails to meet its specified electrical characteristics.

Frequently Asked Questions (FAQ)

Q: Is this MOSFET RoHS-compliant?
A: The datasheet provides information on RoHS-compliance status.
Some parts may contain lead (Pb) terminations which are non-RoHS compliant. Refer to the datasheet for specific details.

Q: What is the maximum drain-source voltage supported?
A: The IRF740S, SiHF740S Power MOSFET supports a maximum drain-source voltage of 400V.

PRODUCT SUMMARY

FEATURES

Surface-mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 400| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 10|

A

TC = 100 °C| 6.3
Pulsed Drain Current a| IDM| 40
Linear Derating Factor| | 1.0| W/°C
Linear Derating Factor (PCB mount) e| 0.025
Single Pulse Avalanche Energy b| EAS| 520| mJ
Avalanche Current a| IAR| 10| A
Repetitive Avalanche Energy a| EAR| 13| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 125| W
Maximum Power Dissipation (PCB mount) e| TA = 25 °C| 3.1
Peak Diode Recovery dV/dt c| dV/dt| 4.0| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Soldering Recommendations (Peak temperature) d| For 10 s| | 300

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)
c. ISD ≤ 10A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
e. When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62|

°C/W

Maximum Junction-to-Ambient (PCB mount)a| RthJA| –| 40
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0, ID = 250 μA| 400| –| –| V
VDS Temperature Coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.49| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 400 V, VGS = 0 V| –| –| 25| μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 6.0 A b| –| –| 0.55| Ù
Forward Transconductance| gfs| VDS = 50 V, ID = 6.0 A b| 5.8| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1400| –|

pF

Output Capacitance| Coss| –| 330| –
Reverse Transfer Capacitance| Crss| –| 120| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 10 A, VDS = 320 V,

see fig. 6 and 13 b

| –| –| 63|

nC

Gate-Source Charge| Qgs| –| –| 9.0
Gate-Drain Charge| Qgd| –| –| 32
Turn-On Delay Time| td(on)|

VDD = 200 V, ID = 10 A,

Rg = 9.1 Ù, RD = 20 Ù, see fig. 10 b

| –| 14| –|

ns

Rise Time| tr| –| 27| –
Turn-Off Delay Time| td(off)| –| 50| –
Fall Time| tf| –| 24| –
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.8| –| 5.9| Ù
Internal Drain Inductance| LD| Between lead, D

6 mm (0.25″) from

package and center of G

die contact

S

| –| 4.5| –|

nH

Internal Source Inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol

D

showing the

integral reverse

G

p – n junction diode

S

| –| –| 10|

A

Pulsed Diode Forward Current a| ISM| –| –| 40
Body Diode Voltage| VSD| TJ = 25 °C, IS = 10 A, VGS = 0 V b| –| –| 2.0| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μs b| –| 370| 790| ns
Body Diode Reverse Recovery Charge| Qrr| –| 3.8| 8.2| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91055.

TO-263AB (HIGH VOLTAGE)

	MILLIMETERS	INCHES			MILLIMETERS	INCHES
DIM.	MIN.	MAX.	MIN.	MAX.	DIM.	MIN.
MAX.	MIN.	MAX.
A	4.06	4.83	0.160	0.190	D1	6.86
A1	0.00	0.25	0.000	0.010	E	9.65
b	0.51	0.99	0.020	0.039	E1	6.22
b1	0.51	0.89	0.020	0.035	e	2.54 BSC
b2	1.14	1.78	0.045	0.070	H	14.61
b3	1.14	1.73	0.045	0.068	L	1.78
c	0.38	0.74	0.015	0.029	L1	–
c1	0.38	0.58	0.015	0.023	L2	–
c2	1.14	1.65	0.045	0.065	L3	0.25 BSC
D	8.38	9.65	0.330	0.380	L4	4.78

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

RECOMMENDED MINIMUM

PADS FOR D2PAK: 3-Lead

Recommended Minimum Pads
Dimensions in Inches/(mm)

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