VISHAY IRFP240 Power MOSFET Owner’s Manual

VISHAY IRFP240 Power MOSFET

Product Information

Specifications:

• Brand: Vishay Siliconix
• Model: IRFP240
• Type: Power MOSFET
• Package: TO-247AC
• Channel Type: N-Channel
• Drain-Source Voltage (VDS): 200V
• On-State Resistance (RDS(on)): 0.18 ohms
• Gate Charge (Qg): 39nC (max.)

Product Description:
The Vishay Siliconix IRFP240 is a Power MOSFET designed for high-power applications. It features a TO-247AC package with an N-channel configuration, suitable for various electronic circuits where efficient power management is required.

Ordering Information:
Package Lead (Pb)-free: TO-247AC IRFP240PbF

Thermal Resistance Ratings:

• Maximum Junction-to-Ambient: 40°C/W
• Case-to-sink, flat, greased surface: 0.83°C/W
• Maximum Junction-to-Case (Drain): 0.24°C/W

Product Usage Instructions

Static Parameters:

• Drain-Source Breakdown Voltage (VDS): 200V
• Gate-Source Threshold Voltage (VGS(th)): 2.0V
• Zero Gate Voltage Drain Current (IDSS): 6.9A
• On-State Resistance (RDS(on)): 0.18 ohms
• Forward Transconductance (gfs): 25S

Dynamic Parameters:

• Total Gate Charge (Qg): 70nC
• Gate-Source Charge (Qgs): 13nC
• Gate-Drain Charge (Qgd): 39nC
• Turn-On Delay Time (td(on)): 130ns
• Rise Time (tr): 45ns
• Turn-Off Delay Time (td(off)): 36ns
• Fall Time (tf): 5.0ns

Frequently Asked Questions

Q: Is the IRFP240 RoHS compliant?

A: The datasheet provides information on RoHS-compliant and non-RoHS-compliant parts. Please refer to the specific details in the datasheet for more information.

Q: What is the maximum drain-source voltage of the IRFP240?

A: The maximum drain-source voltage (VDS) of the IRFP240 is 200V.

Q: What is the on-state resistance of the IRFP240?

A: The on-state resistance (RDS(on)) of the IRFP240 is 0.18 ohms.

Q: What is the gate charge of the IRFP240?

A: The gate charge (Qg) of the IRFP240 is 39nC (max.).

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 200
RDS(on) (W)| VGS = 10 V| 0.18
Qg (max.) (nC)| 70
Qgs (nC)| 13
Qgd (nC)| 39
Configuration| Single

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

• Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
• The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFP240PbF

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 200| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 20|

A

TC = 100 °C| 12
Pulsed drain current a| IDM| 80
Linear derating factor|  | 1.2| W/°C
Single pulse avalanche energy b| EAS| 510| mJ
Repetitive avalanche current a| IAR| 20| A
Repetitive avalanche energy a| EAR| 15| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| 5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| for 10 s|  | 300d
Mounting torque| 6-32 or M3 screw|  | 10| lbf · in
 | 1.1| N · m

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. VDD = 50 V, starting TJ = 25 °C, L = 1.9 mH, Rg = 25 Ω, IAS = 20 A (see fig. 12)
• c. ISD ≤ 18 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.83

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 200| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.29| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 200 V, VGS = 0 V| –| –| 25| μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 12 A b| –| –| 0.18| W
Forward transconductance| gfs| VDS = 50 V, ID = 12 A b| 6.9| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1300| –|

pF

Output capacitance| Coss| –| 400| –
Reverse transfer capacitance| Crss| –| 130| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 18 A, VDS = 160 V,

see fig. 6 and 13 b

| –| –| 70|

nC

Gate-source charge| Qgs| –| –| 13
Gate-drain charge| Qgd| –| –| 39
Turn-on delay time| td(on)|

VDD = 100 V, ID = 18 A, Rg = 9.1 W, RD = 5.4 W,

see fig. 10 b

| –| 14| –|

ns

Rise time| tr| –| 51| –
Turn-off delay time| td(off)| –| 45| –
Fall time| tf| –| 36| –
Internal drain inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact| –| 5.0| –|

nH

Internal source inductance

|

LS

|

–

|

13

|

–

Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p – n junction diode| –| –| 20|

A

Pulsed diode forward current a

|

ISM

|

–

|

–

|

80

Body diode voltage| VSD| TJ = 25 °C, IS = 20 A, VGS = 0 V b| –| –| 2.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b| –| 300| 610| ns
Body diode reverse recovery charge| Qrr| –| 3.4| 7.1| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91210.

Package Information

TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total over b2 and b 4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
 |  |

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 except for dimension c.

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Legal Disclaimer Notice

Disclaimer
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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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