VISHAY IRFP9240 Power MOSFET Owner’s Manual

VISHAY IRFP9240 Power MOSFET

x

VDS (V)| -200 V
RDS(on) (max.) (W)| VGS = -10 V| 0.50
Qg (max.) (nC)| 44
Qgs (nC)| 7.1
Qgd (nC)| 27
Configuration| Single

Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche-rated
• P-channel
• Isolated central mounting hole
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details.

DESCRIPTION

Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-247AC package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFP9240PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -200| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at -10 V| TC = 25 °C| ID| -12|

A

TC = 100 °C| -7.5
Pulsed drain currenta| IDM| -48
Linear derating factor|  | 1.2| W/°C
Single pulse avalanche energy b| EAS| 790| mJ
Repetitive avalanche current a| IAR| -12| A
Repetitive avalanche energy a| EAR| 15| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| -5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)| for 10 s|  | 300 d
Mounting Torque| 6-32 or M3 screw|  | 10| lbf · in
1.1| N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = – 50 V, starting TJ = 25 °C, L = 8.2 mH, Rg = 25 Ω, IAS = – 12 A (see fig. 12)
• ISD ≤ – 12 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from the case.

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.83
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT|
Static|
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -200| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.20| –| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V|
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|
Zero gate voltage drain current| IDSS| VDS = -200 V, VGS = 0 V| –| –| -100| μA|
VDS = -160 V, VGS = 0 V, TJ = 125 °C| –| –| -500|
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = – 7.2 A b| –| –| 0.50| W|
Forward transconductance| gfs| VDS = -50 V, ID = -7.2 A| 4.2| –| –| S|
Dynamic|
Input capacitance| Ciss| VGS = 0 V, VDS = – 25 V,

f = 1.0 MHz, see fig. 5

| –| 1200| –|

pF

|
Output capacitance| Coss| –| 370| –|
Reverse transfer capacitance| Crss| –| 81| –|
Total gate charge| Qg|

VGS = -10 V

|

ID = – 11 A, VDS = – 160 V

see fig. 6 and 13 b

| –| –| 44|

nC

|
Gate-source charge| Qgs| –| –| 7.1|
Gate-drain charge| Qgd| –| –| 27|
Turn-on delay time| td(on)|

VDD = – 100 V, ID = -11 A

RG = 9.1 W, RD= 8.6 W, see fig. 10 b

| –| 14| –|

ns

|
Rise time| tr| –| 43| –|
Turn-off delay time| td(off)| –| 39| –|
Fall time| tf| –| 38| –|
Internal drain inductance| LD| Between lead,|  |

D

S

|  | –| 5.0| –|  |
6 mm (0.25″) from package and center of die contact|

G

| nH|

Internal source inductance

|

LS

|

–

|

13

|

–

|
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| MOSFET symbol|  |  |

D

S

| –| –| -12|  |
showing the integral reverse

p – n junction diode

|

G

| A|
Pulsed diode forward current a|

ISM

|

–

|

–

|

-48

|
Body diode voltage| VSD| TJ = 25 °C, IS = -12 A, VGS = 0 V b| –| –| -5.0| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μs b| –| 250| 300| ns|
Body diode reverse recovery charge| Qrr| –| 2.9| 3.6| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)|

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91239.

TO-247AC (High Voltage)
VERSION 1: FACILITY CODE = 9

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total over b2 and b4 dimensions at maximum material condition.

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 except for dimension c

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
 |  |

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body.
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN, OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies, or incompleteness contained in any datasheet or any other disclosure relating to any product.

Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential, or incidental damages, and (iii) any implied warranties, including warranties of fitness for particular
purpose, non-infringement, and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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