VISHAY IRF830 Power Mosfet Owner’s Manual

IRF830 Power Mosfet

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Product Specifications

Product Description

The IRF830 by Vishay Siliconix is a Power MOSFET in a D TO-220AB
package. It is an N-Channel MOSFET designed for various
commercial-industrial applications with power dissipation levels up
to approximately 50 W.

Features

• Fast switching
• Ruggedized device design
• Low on-resistance
• Cost-effectiveness

Ordering Information

Package options:

• Lead (Pb)-free: IRF830PbF
• Lead (Pb)-free and halogen-free: IRF830PbF-BE3

Thermal Resistance Ratings

Product Usage Instructions

Installation

1. Ensure proper grounding before installation.
2. Mount the MOSFET securely using a 6-32 or M3 screw with the
   recommended torque.

Operating Conditions

• Operating junction and storage temperature range: -55°C to
  +150°C.

• Soldering recommendations: Peak temperature should not exceed
  the specified value for 10 seconds.

Frequently Asked Questions (FAQ)

Q: Is the IRF830 RoHS-compliant?

A: The datasheet provides information on RoHS-compliant and
non-RoHS-compliant parts, including lead (Pb) terminations. Please
refer to the datasheet for details.

Q: What are the key features of the IRF830?

A: The IRF830 offers fast switching, rugged design, low
on-resistance, and cost-effectiveness.

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IRF830
Vishay Siliconix

Power MOSFET

D TO-220AB

S D G

G
S N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration

500

VGS = 10 V

1.5

38

5.0

22

Single

FEATURES

· Dynamic dV/dt rating

· Repetitive avalanche rated

Available

· Fast switching · Ease of paralleling

Available

· Simple drive requirements

· Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are
  RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free

TO-220AB IRF830PbF IRF830PbF-BE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor

VDS

VGS

VGS at 10 V

TC = 25 °C TC = 100 °C

ID

IDM

Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c

TC = 25 °C

EAS IAR EAR PD dV/dt

Operating junction and storage temperature range Soldering recommendations (peak temperature) d

For 10 s

TJ, Tstg

Mounting torque

6-32 or M3 screw

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, Rg = 25 , IAS = 4.5 A (see fig. 12) c. ISD 4.5 A, dI/dt 75 A/s, VDD VDS, TJ 150 °C d. 1.6 mm from case

LIMIT 500 ± 20 4.5 2.9 18 0.59 280 4.5 7.4 74 3.5
-55 to +150 300 10 1.1

UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N · m

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Document Number: 91063

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IRF830
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)

RthJA RthCS RthJC

TYP. –
0.50 –

MAX. 62 1.7

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay Time Rise time Turn-off delay time Fall time
Internal drain inductance
Internal source inductance

VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
LD
LS

VGS = 0 V, ID = 250 A

500

Reference to 25 °C, ID = 1 mA

–

VDS = VGS, ID = 250 A

2.0

VGS = ± 20 V

–

VDS = 500 V, VGS = 0 V

–

VDS = 400 V, VGS = 0 V, TJ = 125 °C

–

VGS = 10 V

ID = 2.7 A b

–

VDS = 50 V, ID = 2.7 A b

2.5

VGS = 0 V,

–

VDS = 25 V,

–

f = 1.0 MHz, see fig. 5

–

–

VGS = 10 V

ID = 3.1 A, VDS = 400 V, see fig. 6 and 13 b

–

–

–

VDD = 250 V, ID = 3.1 A

–

Rg = 12 , RD = 79 , see fig. 10 b

–

–

Between lead, 6 mm (0.25″) from

D

–

package and center of

G

die contact

–
S

–

–

V

0.61

–

V/°C

–

4.0

V

–

± 100 nA

–

25

A

–

250

–

1.5

–

–

S

610

–

160

–

pF

68

–

–

38

–

5.0

nC

–

22

8.2

–

16

–

ns

42

–

16

–

4.5

–

nH

7.5

–

Gate input resistance

Rg

Drain-Source Body Diode Characteristics

f = 1 MHz, open drain

0.5

–

2.7

Continuous source-drain diode current

IS

MOSFET symbol showing the

D

–

–

4.5

integral reverse

G

A

Pulsed diode forward current a

ISM

p – n junction diode

–

–

18

S

Body diode voltage Body diode reverse recovery time Body diode reverse recovery charge Forward turn-on time

VSD

TJ = 25 °C, IS = 4.5 A, VGS = 0 V b

–

–

1.6

V

trr Qrr

–

TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/s b

–

320

640

ns

1.0

2.0

C

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 %

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www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF830
Vishay Siliconix

ID, Drain Current (A)

101 Top

VGS 15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V 100 Bottom 4.5 V

4.5 V

10-1
91063_01

20 µs Pulse Width TC = 25 °C

100

101

VDS, Drain-to-Source Voltage (V)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

101 Top

VGS 15 V

10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V 100 Bottom 4.5 V

4.5 V

ID, Drain Current (A)

10-1
91063_02

20 µs Pulse Width TC = 150 °C

100

101

VDS, Drain-to-Source Voltage (V)

Fig. 2 – Typical Output Characteristics, TC = 150 °C

101 150 °C
25 °C 100

ID, Drain Current (A)

10-1 4
91063_03

20 µs Pulse Width VDS = 50 V

5

6

7

8

9

10

VGS, Gate-to-Source Voltage (V)

Fig. 3 – Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance (Normalized)

3.0 ID = 3.1 A
2.5 VGS = 10 V

2.0 1.5

1.0

0.5

0.0 – 60 – 40 – 20 0 20 40 60 80 100 120 140 160

91063_04

TJ, Junction Temperature (°C)

Fig. 4 – Normalized On-Resistance vs. Temperature

1500 1250 1000
750

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd
Ciss

Capacitance (pF)

500
250
0 100
91063_05

Coss
Crss 101 VDS, Drain-to-Source Voltage (V)

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

VGS, Gate-to-Source Voltage (V)

20 ID = 3.1 A

16

VDS = 400 V

VDS = 250 V

12

VDS = 100 V

8

4
0 0
91063_06

For test circuit see figure 13

8

16

24

32

40

QG, Total Gate Charge (nC)

Fig. 6 – Typical Gate Charge vs. Drain-to-Source Voltage

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ISD, Reverse Drain Current (A)

101 150 °C 25 °C

100

0.4
91063_07

VGS = 0 V

0.6

0.8

1.0

1.2

VSD, Source-to-Drain Voltage (V)

Fig. 7 – Typical Source-Drain Diode Forward Voltage

ID, Drain Current (A)

102
5
2
10
5
2
1
5
2
0.1
5
2
10-2 0.1 2
91063_08

Operation in this area limited by RDS(on) 10 µs
100 µs
1 ms
10 ms

51 2

TC = 25 °C TJ = 150 °C Single Pulse
5 10 2 5 102 2

5 103 2

VDS, Drain-to-Source Voltage (V)

5 104

Fig. 8 – Maximum Safe Operating Area

10

IRF830
Vishay Siliconix

5.0

4.0

ID, Drain Current (A)

3.0 2.0

1.0

0.0

25

50

75

100

125

150

91063_09

TC, Case Temperature (°C)

Fig. 9 – Maximum Drain Current vs. Case Temperature

VDS VGS RG

RD D.U.T.

10 V
Pulse width 1 µs Duty factor 0.1 %

+- VDD

Fig. 10a – Switching Time Test Circuit

VDS 90 %

10 % VGS

td(on) tr

td(off) tf

Fig. 10b – Switching Time Waveforms

Thermal Response (ZthJC)

1 0 – 0.5

0.2 0.1 0.1 0.05 0.02 0.01
10-2 10-5

Single Pulse (Thermal Response)

10-4

10-3

10-2

PDM

t1 t2
Notes:
1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC

0.1

1

10

91063_11

t1, Rectangular Pulse Duration (S)

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF830
Vishay Siliconix

VDS Vary tp to obtain required IAS
RG
10 V tp

L
D.U.T IAS
0.01

+ – VDD
A

Fig. 12a – Unclamped Inductive Test Circuit

VDS

V(BR)DSS
tp VDD

IAS Fig. 12b – Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

600

ID

Top 2.0 A

500

2.8 A

Bottom 4.5 A

400

300

200

100

VDD = 50 V 0

25

50

75

100

125

150

91063_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

Current regulator Same type as D.U.T.

10 V QGS
VG

QG QGD

Charge

Fig. 13a – Basic Gate Charge Waveform

12 V

50 k

0.2 µF

0.3 µF

+ D.U.T. – VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b – Gate Charge Test Circuit

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D.U.T.
+ –

Peak Diode Recovery dV/dt Test Circuit

Circuit layout considerations

· Low stray inductance

· Ground plane

· Low leakage inductance

current transformer

–

–

IRF830
Vishay Siliconix

Rg

· dV/dt controlled by Rg

· Driver same type as D.U.T. · ISD controlled by duty factor “D”

– VDD

· D.U.T. – device under test

Driver gate drive

P.W.

Period

D =

P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse

recovery current

Body diode forward current dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt VDD

Re-applied voltage

Body diode forward drop Inductor current

Ripple 5 %

ISD

Note a. VGS = 5 V for logic level devices

Fig. 14 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91063.

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Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
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Revision: 01-Jul-2024

1

Document Number: 91000

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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