VISHAY IRFBG30 Power MOSFET Instruction Manual
- June 3, 2024
- VISHAY
Table of Contents
IRFBG30 Power MOSFET
Instruction Manual 
IRFBG30 Power MOSFET
PRODUCT SUMMARY
| VDS M | 1000 |
|---|---|
| RDS(on) (Ω) | Vas = 10 V |
| Qg max. (nC) | 80 |
| Qgs (nC) | 10 |
| Qgd (nC) | 42 |
| Configuration | Single |
FEATURES
-
Dynamic dV/dt rating
-
Repetitive avalanche rated
-
Fast switching
-
Ease of paralleling
-
Simple drive requirements
-
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
| Package | TO-220AB |
|---|---|
| Lead (Pb)-free | IRFBG30PbF |
| Lead (Pb)-free and halogen-free | IRFBG30PbF-BE3 |
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNIT |
|---|---|---|---|
| Drain-source voltage | VDS | 1000 | V |
| Gate-source voltage | Vas | ± 20 | |
| Continuous drain current | Vas at 10 V | Tc = 25 °C | ID |
| Tc = 100 °C | 2.0 | ||
| Pulsed drain current a | IPM | 12 | |
| Linear derating factor | 1.0 | W/°C | |
| Single pulse avalanche energy b | EAS | 280 | mJ |
| Repetitive avalanche current a | IAR | 3. | A |
| Repetitive avalanche energy a | EAR | 13 | mJ |
| Maximum power dissipation | Tc = 25 °C | PD | 125 |
| Peak diode recovery dV/dt ° | dV/dt | 1.0 | V/ns |
| Operating junction and storage temperature range | Tj, Tstg | -55 to +150 | °C |
| Soldering recommendations (peak temperature) d | For 10 s | 300 | |
| Mounting torque | 6-32 or M3 screw | 10 | |
| 1. | N • m |
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 55 mH, Rg = 25 Ω, IAS = 3.1 A (see
fig. 12)
c. ISD ≤ 3.1 A, dI/dt ≤ 80 A/μs, VDD ≤ 600, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
|---|---|---|---|---|
| Maximum junction-to-ambient | RthJA | 62 | °C/W | |
| Case-to-sink, flat, greased surface | Rthcs | 0.50 | ||
| Maximum junction-to-case (drain) | RthJC | 1.0 |
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 pA | 1000 | – | V | |
| VDS temperature coefficient | AVDs/T j | Reference to 25 °C, ID = 1 mA | – | 1. | ||
| – | V/°C | |||||
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 pA | 2.0 | 4.0 | V | |
| Gate-source leakage | IGSS | VGS = ± 20 V | – | ± 100 | nA | |
| Zero gate voltage drain current | loss | VDS = 1000 V, VGS = 0 V | – | 100 | pA | |
| VDS = 800 V, VGS = 0 V, Tj = 125 °C | 500 | |||||
| Drain-source on-state resistance | RDS(on) | Vcs = 10 V | I ID = 1.9 A b | |||
| 5.0 | S2 | |||||
| Forward transconductance | gls | VDS = 10 V, ID = 1.9 A b | S | |||
| Dynamic | ||||||
| Input capacitance | Ciss | Vcs = 0 V, |
VDS = 25 V,
f = 1. 5 see fi
1.0 MHz, fig.| –| 980| | of
Output capacitance| Coss| | 140|
Reverse transfer capacitance| Crss| | 50|
Total gate charge| Qg| VGS = 10 V| ID = 3.1 A, VDS =400 V, see fig. 6 and 13
b| | | 80| nC
Gate-source charge| Ogs| | | 10
Gate-drain charge| Ogd| | –| 42
Turn-on delay time| td(on)| VDD = 500 V, ID = 3.1 A
Ftg = 12 12, RD = 170 Q, see fig. 10 b| | 12| |
Rise time| tr| | 25|
Turn-off delay time| td(oft)| | 89| _
Fall time| | | 29| –
Gate input resistance| Fig| f = 1 MHz, open drain| 0.-1| | 2.| 52
Internal drain inductance| LD| Between lead,
6 mm (0.25′) from package and center die contact| | | | 5| | nH
of
Internal source inductance| Ls| | 8.|
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| Is| MOSFET symbol showing the integral
reverse| | | –| –| 3.| A
p – n junction diode|
Pulsed diode forward current a| Ism| –| –| 12
Body diode voltage| VsD| Tj = 25 °C, Is = 3.1 A, VGs=0Vb| –| –| 2.| V
Body diode reverse recovery time| trr| Tj = 25 °C, IF = 3.1 A, dl/dt = 100
A/ps b| –| 410| 620| ns
Body diode reverse recovery charge| Qrr| –| 1.| 2.0| pC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by Ls and LS
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91124.
Package Information
Vishay Siliconix TO-220-1
| DIM. | MILLIMETERS | INCHES |
|---|---|---|
| MIN. | MAX. | MIN. |
| A | 4. | 5. |
| b | 0.69 | 1. |
| b(1) | 1. | 2. |
| c | 0.36 | 0.61 |
| D | 14. | 16. |
| E | 10. | 11. |
| e | 2. | 3. |
| e(1) | 5. | 5. |
| F | 1. | 1.40 |
| 1-1(1) | 6.10 | 7. |
| J(1) | 2. | 3. |
| L | 13. | 14.40 |
| L(1) | 3. | 4. |
| 0 P | 4. | 4. |
| 0 | 3. | 3.00 |
ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink
hole for HVM
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Revision: 01-Jan-2022
Downloaded from Arrow.com.
Document Number: 91000
References
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