VISHAY IRL540 Power Mosfet Owner’s Manual
- August 26, 2024
- VISHAY
Table of Contents
VISHAY IRL540 Power Mosfet
Product Specifications
| Parameter | Value |
|---|---|
| VDS (V) | 100 |
| RDS(on) () | 9.4 |
| Qg (Max.) (nC) | 27 |
| Qgs (nC) | 0.077 |
| Qgd (nC) | Not specified |
| Configuration | Single |
Description
The IRL540 is a Vishay Siliconix Power MOSFET in a D TO-220AB package. It is an N-Channel MOSFET providing fast switching, rugged design, low on- resistance, and cost-effectiveness.
Features
- Fast switching
- Ruggedized device design
- Low on-resistance
- Cost-effective
Ordering Information
Package options:
Lead (Pb)-free: IRL540PbF
Lead (Pb)-free and halogen-free: IRL540PbF-BE3
Thermal Resistance Ratings
| Parameter | Typical Value | Maximum Value |
|---|---|---|
| Junction-to-ambient | – | 62 |
| Case-to-sink, flat, greased surface | 0.50 | 1.0 |
| Junction-to-case (drain) | – | – |
Product Usage Instructions
Mounting
Use a 6-32 or M3 screw to mount the MOSFET securely.
Soldering Recommendations
Follow the recommended peak temperature for soldering to ensure proper
connections.
Operating Conditions
Ensure the operating junction and storage temperature range is within the
specified limits for optimal performance and longevity.
Frequently Asked Questions (FAQ)
Is the IRL540 RoHS-compliant?
The datasheet provides information on RoHS compliance. Some parts may have
lead terminations which are not RoHS-compliant.
Power MOSFET
PRODUCT SUMMARY
VDS (V)| 100
RDS(on) (W)| VGS = 5.0 V| 0.077
Qg (Max.) (nC)| 64
Qgs (nC)| 9.4
Qgd (nC)| 27
Configuration| Single
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRL540PbF
Lead (Pb)-free and halogen-free| IRL540PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 100| V
Gate-source voltage| VGS| ± 10
Continuous drain current| VGS at 5 V| TC = 25 °C| ID| 28|
A
TC = 100 °C| 20
Pulsed drain current a| IDM| 110
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 440| mJ
Repetitive avalanche current a| IAR| 28| A
Repetitive avalanche energy a| EAR| 15| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- VDD = 25 V, starting TJ = 25 °C, L = 841 μH, Rg = 25 Ω, IAS = 28 A (see fig. 12c)
- ISD ≤ 28 A, dI/dt ≤ 170 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
- 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|
°C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix
maintains worldwide manufacturing capability. Products may be manufactured at
one of several qualified locations. Reliability data for Silicon Technology
and Package Reliability represent a composite of all qualified locations. For
related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?91300.
Disclaimer
-
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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References
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