VISHAY IRF644 Power MOSFET Owner’s Manual

: August 25, 2024
: VISHAY

Table of Contents

VISHAY IRF644 Power MOSFET
Product Usage Instructions
Power MOSFET
FEATURES
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
VISHAY IRF644 Power MOSFET
Disclaimer
References
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VISHAY IRF644 Power MOSFET

Specifications

Brand: Vishay Siliconix
Product Name: IRF644 Power MOSFET
Package Type: TO-220AB
Channel Type: N-Channel MOSFET
Maximum Drain-Source Voltage (VDS): 250V
On-Resistance (RDS(on)): 68 Ohms
Maximum Gate Charge (Qg max.): 35nC
Gate-Source Charge (Qgs): 11nC
Gate-Drain Charge (Qgd): 0.28nC

Product Usage Instructions

Installation

Identify the drain, source, and gate pins on the MOSFET.
Ensure proper heat dissipation by mounting the MOSFET on a suitable heat sink.
Connect the drain, source, and gate pins as per your circuit requirements.

Operating Conditions

Ensure the drain-source voltage (VDS) does not exceed 250V.
Maintain the gate-source voltage (VGS) at 10V for optimal performance.
Avoid exceeding the specified maximum power dissipation of the MOSFET.

FAQ

Q: Can I use this MOSFET in high-power applications?
A: The IRF644 Power MOSFET is suitable for power dissipation levels up to approximately 50W, making it ideal for various industrial applications within this power range.
Q: What is the recommended gate-source voltage for optimal performance?
A: It is recommended to maintain a gate-source voltage (VGS) of 10V for this MOSFET to achieve the best switching characteristics.

Power MOSFET

PRODUCT SUMMARY

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF644PbF
Lead (Pb)-free and halogen-free| IRF644PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 250| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 14| A
TC = 100 °C| 8.5
Pulsed drain current a| IDM| 56
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 550| mJ
Repetitive avalanche current a| IAR| 14| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| TC = 25 °C| PD| 125| W
Peak diode recovery dV/dt c| dV/dt| 4.8| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 50 V, starting TJ = 25 °C, L = 4.5 mH, Rg = 25 Ω, IAS = 14 A (see fig. 12)
ISD ≤ 14 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY IRF644 Power MOSFET

Driver gate drive

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91039

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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