VISHAY SiJK140E Power MOSFET Owner’s Manual
- August 24, 2024
- VISHAY
Table of Contents
VISHAY SiJK140E Power MOSFET
Product Specifications
- Brand: Vishay Siliconix
- Model: SiJK140E
- Type: N-Channel MOSFET
- Drain-Source Voltage (VDS): 40V
- Maximum On-State Resistance (RDS(on)): 0.00047Ω at VGS = 10V
- Gate Charge (Qg): 312nC (typical)
- Continuous Drain Current (ID): 795A
FAQ
- What are the typical applications for the SiJK140E MOSFET?
- The SiJK140E is commonly used in power supplies, motor control circuits, LED lighting systems, and other applications that require high-efficiency power switching.
- What is the maximum drain-source voltage supported by the SiJK140E?
- The SiJK140E MOSFET can handle a maximum drain-source voltage of 40V.
- What is the maximum continuous drain current rating of the SiJK140E?
- The SiJK140E has a maximum continuous drain current rating of 795A.
OVERVIEW
FEATURES AND APPLICATIONS
FEATURES
- TrenchFET® Gen V power MOSFET
- Leadership RDS(on) minimizes power loss from conduction
- 100 % Rg and UIS tested
- Standard level FET
- Enhance power dissipation and lower RthJC
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
- Synchronous rectification
- Automation
- OR-ing and hot swap switch
- Power supplies
- Motor drive control
- Battery management
PRODUCT SUMMARY
| VDS (V) | 40 |
|---|---|
| RDS(on) max. (W) at VGS = 10 V | 0.00047 |
| Qg typ. (nC) | 312 |
| ID (A) a | 795 |
| Configuration | Single |
ORDERING INFORMATION AND ABSOLUTE MAXIMUM RATINGS
ORDERING INFORMATION
| Package | PowerPAK® 10 x 12 |
|---|---|
| Lead (Pb)-free and halogen-free | SiJK140E-T1-GE3 |
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 40| V
Gate-source voltage| VGS| ± 20
Continuous drain current (TJ = 175 °C)
| TC = 25 °C|
ID
| 795|
A
TC = 100 °C| 562
TA = 25 °C| 140 b, c
TA = 100 °C| 99 b, c
Pulsed drain current (t = 100 μs)| IDM| 900
Continuous source-drain diode current| TC = 25 °C| IS| 487
TA = 25 °C| 15 b, c
Single pulse avalanche current| L = 0.1 mH| IAS| 100
Single pulse avalanche energy| EAS| 500| mJ
Maximum power dissipation
| TC = 25 °C|
PD
| 536|
W
TC = 100 °C| 268
TA = 25 °C| 17 b, c
TA = 100 °C| 8.3 b, c
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) c| | 260
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYPICAL| MAXIMUM| UNIT
Maximum junction-to-ambient b| t £ 10 s| RthJA| 6.3| 9| °C/W
Maximum junction-to-case (drain)| Steady state| RthJC| 0.21| 0.28
Notes
- TC = 25 °C
- Surface mounted on 1″ x 1″ FR4 board
- t = 10 s
- See solder profile (www.vishay.com/doc?73257). The PowerPAK 10 x 12 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
- Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
- Maximum under steady state conditions is 39 °C/W
SPECIFICATIONS
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 40| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 10 mA| –| 22| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| ID = 250 μA| –| -8.7| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.4| –| 3.5| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 40 V, VGS = 0 V| –| –| 1| μA
VDS = 40 V, VGS = 0 V, TJ = 55 °C| –| –| 10
Drain-source on-state resistance a| RDS(on)| VGS = 10 V, ID = 20 A| –|
0.00034| 0.00047| W
Forward transconductance a| gfs| VDS = 25 V, ID = 100 A| –| 450| –| S
Dynamic b
Input capacitance| Ciss|
VDS = 20 V, VGS = 0 V, f = 1 MHz
| –| 18 510| –|
pF
Output capacitance| Coss| –| 8540| –
Reverse transfer capacitance| Crss| –| 555| –
Total gate charge| Qg|
VDS = 40 V, VGS = 10 V, ID = 20 A
| –| 312| 470|
nC
Gate-source charge| Qgs| –| 84| –
Gate-drain charge| Qgd| –| 70| –
Output charge| Qoss| VDS = 20 V, VGS = 0 V| –| 220| –
Gate resistance| Rg| f = 1 MHz| 0.22| 1.1| 2.2| W
Turn-on delay time| td(on)|
VDD = 20 V, RL = 4 W, ID @ 10 A, VGEN = 10 V, Rg = 1 W
| –| 40| 80|
ns
Rise time| tr| –| 45| 90
Turn-off delay time| td(off)| –| 85| 170
Fall time| tf| –| 45| 90
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 487| A
Pulse diode forward current| ISM| | –| –| 900
Body diode voltage| VSD| IS = 10 A, VGS = 0 V| –| 0.7| 1.1| V
Body diode reverse recovery time| trr|
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
| –| 105| 210| ns
Body diode reverse recovery charge| Qrr| –| 310| 620| nC
Reverse recovery fall time| ta| –| 64| –| ns
Reverse recovery rise time| tb| –| 41| –
Notes
- Pulse test; pulse width 300 μs, duty cycle 2 %
- Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Note
The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62451
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