VISHAY SiJK140E Power MOSFET Owner’s Manual

: August 24, 2024
: VISHAY

Table of Contents

VISHAY SiJK140E Power MOSFET
Product Specifications
FAQ
OVERVIEW
FEATURES AND APPLICATIONS
PRODUCT SUMMARY
ORDERING INFORMATION AND ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
TYPICAL CHARACTERISTICS
Legal Disclaimer
References
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VISHAY SiJK140E Power MOSFET

Product Specifications

Brand: Vishay Siliconix
Model: SiJK140E
Type: N-Channel MOSFET
Drain-Source Voltage (VDS): 40V
Maximum On-State Resistance (RDS(on)): 0.00047Ω at VGS = 10V
Gate Charge (Qg): 312nC (typical)
Continuous Drain Current (ID): 795A

FAQ

What are the typical applications for the SiJK140E MOSFET?
- The SiJK140E is commonly used in power supplies, motor control circuits, LED lighting systems, and other applications that require high-efficiency power switching.
What is the maximum drain-source voltage supported by the SiJK140E?
- The SiJK140E MOSFET can handle a maximum drain-source voltage of 40V.
What is the maximum continuous drain current rating of the SiJK140E?
- The SiJK140E has a maximum continuous drain current rating of 795A.

OVERVIEW

FEATURES AND APPLICATIONS

FEATURES

TrenchFET® Gen V power MOSFET
Leadership RDS(on) minimizes power loss from conduction
100 % Rg and UIS tested
Standard level FET
Enhance power dissipation and lower RthJC
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

Synchronous rectification
Automation
OR-ing and hot swap switch
Power supplies
Motor drive control
Battery management

PRODUCT SUMMARY

VDS (V)	40
RDS(on) max. (W) at VGS = 10 V	0.00047
Qg typ. (nC)	312
ID (A) a	795
Configuration	Single

ORDERING INFORMATION AND ABSOLUTE MAXIMUM RATINGS

ORDERING INFORMATION

Package	PowerPAK® 10 x 12
Lead (Pb)-free and halogen-free	SiJK140E-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 40| V
Gate-source voltage| VGS| ± 20

Continuous drain current (TJ = 175 °C)

| TC = 25 °C|

ID

| 795|

A

TC = 100 °C| 562
TA = 25 °C| 140 b, c
TA = 100 °C| 99 b, c
Pulsed drain current (t = 100 μs)| IDM| 900
Continuous source-drain diode current| TC = 25 °C| IS| 487
TA = 25 °C| 15 b, c
Single pulse avalanche current| L = 0.1 mH| IAS| 100
Single pulse avalanche energy| EAS| 500| mJ

Maximum power dissipation

| TC = 25 °C|

PD

| 536|

W

TC = 100 °C| 268
TA = 25 °C| 17 b, c
TA = 100 °C| 8.3 b, c
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) c| | 260

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

Notes

TC = 25 °C
Surface mounted on 1″ x 1″ FR4 board
t = 10 s
See solder profile (www.vishay.com/doc?73257). The PowerPAK 10 x 12 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
Maximum under steady state conditions is 39 °C/W

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 40| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 10 mA| –| 22| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| ID = 250 μA| –| -8.7| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.4| –| 3.5| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 40 V, VGS = 0 V| –| –| 1| μA
VDS = 40 V, VGS = 0 V, TJ = 55 °C| –| –| 10
Drain-source on-state resistance a| RDS(on)| VGS = 10 V, ID = 20 A| –| 0.00034| 0.00047| W
Forward transconductance a| gfs| VDS = 25 V, ID = 100 A| –| 450| –| S
Dynamic b
Input capacitance| Ciss|

VDS = 20 V, VGS = 0 V, f = 1 MHz

| –| 18 510| –|

pF

Output capacitance| Coss| –| 8540| –
Reverse transfer capacitance| Crss| –| 555| –
Total gate charge| Qg|

VDS = 40 V, VGS = 10 V, ID = 20 A

| –| 312| 470|

nC

Gate-source charge| Qgs| –| 84| –
Gate-drain charge| Qgd| –| 70| –
Output charge| Qoss| VDS = 20 V, VGS = 0 V| –| 220| –
Gate resistance| Rg| f = 1 MHz| 0.22| 1.1| 2.2| W
Turn-on delay time| td(on)|

VDD = 20 V, RL = 4 W, ID @ 10 A, VGEN = 10 V, Rg = 1 W

| –| 40| 80|

ns

Rise time| tr| –| 45| 90
Turn-off delay time| td(off)| –| 85| 170
Fall time| tf| –| 45| 90
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 487| A
Pulse diode forward current| ISM| | –| –| 900
Body diode voltage| VSD| IS = 10 A, VGS = 0 V| –| 0.7| 1.1| V
Body diode reverse recovery time| trr|

IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C

| –| 105| 210| ns
Body diode reverse recovery charge| Qrr| –| 310| 620| nC
Reverse recovery fall time| ta| –| 64| –| ns
Reverse recovery rise time| tb| –| 41| –

Notes

Pulse test; pulse width 300 μs, duty cycle 2 %
Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Note

The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62451

Legal Disclaimer

Disclaimer

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