VISHAY IRF520 Power MOSFET Instruction Manual
- June 3, 2024
- VISHAY
Table of Contents
IRF520 Power MOSFET
Instruction Manual
IRF520 Power MOSFET
PRODUCT SUMMARY
VDS (V)| 100
RDS(on) (L)| VGS = 10 V| 0.27
Qg max. (nC)| 16
Qgs (nC)| 4.4
Qgd (nC)| 7.7
Configuration| Single
FEATURES
-
Dynamic dV/dt rating
• Repetitive avalanche rated
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements -
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are RoHS-compliant
and/or parts that are non RoHS-compliant. For example, parts with lead (Pb)
terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRF520PbF
Lead (Pb)-free and halogen-free| IRF520PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 100| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 9.2| A
TC = 100 °C| 6.5
Pulsed drain current a| IDM| 37
Linear derating factor| | 0.40| W/°C
Single pulse avalanche energy b| EAS| 200| mJ
Repetitive avalanche current a| IAR| 9.2| A
Repetitive avalanche energy a| EAR| 6.0| mJ
Maximum power dissipation| TC = 25 °C| PD| 60| W
Peak diode recovery dV/dt c| dV/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 Ω, IAS = 9.2 A (see
fig. 12)
c. ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 2.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| Vss = 0 V, ID = 250 pA| 100| –| –| V
VDs temperature coefficient| ΔVDS/TJ| Reference to 25 °C, ID= 1 mA| –| 0.13|
–| V/°C
Gate-source threshold voltage| Vssfth)| VDS = VGs, ID = 250 pA| 2.0| –| 4.0| V
Gate-source leakage| IGS(th)| Vcs=±20 V| –| –| ± 100| nA
Zero gate voltage drain current| lGSS| VDs=100V,VGs= 0 V| | | 25| μA
VDs = 80 V, VDs = 0 V, Tj = 150 °C| | –| 250
Drain-source on-state resistance| RDS(on)| VGs = 10 V| ID = 5.5 A 15| –| –|
0.27| Ω
Forward transconductance| gfs| VDs = 50 V, ID = 5.5 A 6| 3.| –| | S
Dynamic|
Input capacitance| Ciss| VGs = 0 V,
VDs = 25 V,
f = 1. 0 MHz, .
5 see fig| | 360| | pF
Output capacitance| Coss| | 150|
Reverse transfer capacitance| Crss| | 34|
Total gate charge| Qg| Ves = 10 V| ID = 9.2 A VDs= 80 ,
see fig. 6 and 13 by| | | 16| nC
Gate-source charge| Qgs| | | 4.
Gate-drain charge| Ogd| | | 8.
Turn-on delay time| td(on)| VDD = 50 V, ID = 9.2 A,
Rg = 18 (2, RD = 52 (2, see fig. 10 b| | 9.| | ns
Rise time| tr| –| 30| i
Turn-off delay time| td(off)| –| 19| –
Fall time| tf| –| 20| –
Gate input resistance| Rg| f = 1 MHz, open drain| 1.0| | 5.0| Ω
Internal drain inductance| 1-G| Between lead, 6 mm (0.25°) from package and
center of die contact| –| 5.| –| nH
Internal source inductance| LS| | 75|
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral
reverse
p – n junction diode| | | 92| A
Pulsed diode forward current a| ISM| | –| 37
Body diode voltage| VSD| Li = 25 °C, Is = 92 A, Vss = 0 V b| | –| 2.| V
Body diode reverse recovery time| trr| Tj = 25 °C, IF = 9.2 A, dl/dt = 100
A/ps 6| | 110| 260| ns
Body diode reverse recovery charge| Orr| | 0.53| 1.| μC
Forward tum-on time| ton| Intrinsic tum-on time is negligible (turn-on is
dominated by Ls and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91017.
Package Information
TO-220-1
| DIM. | MILLIMETERS | INCHES |
|---|---|---|
| MIN. | MAX. | MIN. |
| A | 4.24 | 4.65 |
| b | 0.69 | 1.02 |
| b(1) | 1.14 | 1.78 |
| c | 0.36 | 0.61 |
| D | 14.33 | 15.85 |
| E | 9.96 | 10.52 |
| e | 2.41 | 2.67 |
| e(1) | 4.88 | 5.28 |
| F | 1.14 | 1.40 |
| H(1) | 6.10 | 6.71 |
| J(1) | 2.41 | 2.92 |
| L | 13.36 | 14.40 |
| L(1) | 3.33 | 4.04 |
| Ø P | 3.53 | 3.94 |
| Q | 2.54 | 3.00 |
ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink
hole for HVM
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Document Number: 91000
Revision: 01-Jan-2022
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References
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