VISHAY SIA416DJ Siliconix Discrete Semiconductor Owner’s Manual

VISHAY SIA416DJ Siliconix Discrete Semiconductor

Specifications:

• Manufacturer: Vishay Siliconix
• Product Name: SiA416DJ
• Channel Type: N-Channel
• Maximum Drain-Source Voltage (VDS): 100V
• Maximum On-State Resistance (RDS(on)): 0.083 ohms at VGS = 10V, 0.130 ohms at VGS = 4.5V
• Continuous Drain Current (ID): 11.3A
• Total Gate Charge (Qg): 3.5nC
• Package Type: PowerPAK SC-70-6L-Single
• Lead-free and Halogen-free

Product Usage Instructions

Features and Parameters:

• Maximum Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 11.3A
• Total Gate Charge (Qg): 3.5nC
• Maximum Power Dissipation: 12W
• Operating Temperature Range: -55°C to 150°C
• Soldering Peak Temperature: 260°C

Static Parameters:

• Drain-Source Breakdown Voltage: 100V
• Gate-Source Threshold Voltage: 3V
• Zero Gate Voltage Drain Current: 10nA
• On-State Drain Current: 9A
• Drain-Source On-State Resistance: 0.083 ohms at VGS = 10V, 0.130 ohms at VGS = 4.5V

Dynamic Parameters:

• Total Gate Charge: 3.5nC
• Input Capacitance: 295pF
• Output Capacitance: 92pF
• Reverse Transfer Capacitance: 16pF
• Turn-On Delay Time: 25ns
• Rise Time: 50ns
• Turn-Off Delay Time: 100ns
• Fall Time: 200ns

Frequently Asked Questions (FAQ):

1. Q: What is the maximum operating temperature range for the SiA416DJ MOSFET?
   A: The MOSFET can operate within a temperature range of -55°C to 150°C.

2. Q: Does the SiA416DJ MOSFET come with lead and halogen-free options?
   A: Yes, the ordering information includes lead (Pb)-free and Halogen-free options.

3. Q: What is the maximum drain-source voltage supported by the SiA416DJ MOSFET?
   A: The MOSFET supports a maximum drain-source voltage of 100V.

4. Q: What is the total gate charge for the SiA416DJ MOSFET?
   A: The total gate charge is specified to be 3.5nC.

PRODUCT SUMMARY

V DS (V)| R DS(on) ( W ) Max.| I D (A) a| Q g (Typ.)
100| 0.083 at VGS = 10 V| 11.3| 3.5 nC
0.130 at VGS = 4.5 V| 9

PowerPAK SC-70-6L-Single

Ordering Information:
SiA416DJ-T1-GE3 (Lead (Pb)-free and Halogen-free)

FEATURES

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization:
  For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• DC/DC Converters
• Full-Bridge Converters
• For Power Bricks and POL Power

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter| Symbol| Limit| Unit
Drain-Source Voltage| VDS| 100| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current (TJ = 150 °C)| TC = 25 °C|

ID

| 11.3| A
TC = 70 °C| 9
TA = 25 °C| 4.8b, c
TA = 70 °C| 3.9b, c
Pulsed Drain Current (t = 300 µs)| IDM| 15
Continuous Source-Drain Diode Current| TC = 25 °C| IS| 12
TA = 25 °C| 2.9b, c
Single Pulse Avalanche Current| L = 0.1 mH| IAS| 3
Single Pulse Avalanche Energy| EAS| 0.45| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 19| W
TC = 70 °C| 12
TA = 25 °C| 3.5b, c
TA = 70 °C| 2.2b, c
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to 150| °C
Soldering Recommendations (Peak Temperature)d, e| | 260
THERMAL RESISTANCE RATINGS

Parameter| Symbol| Typical| Maximum| Unit
Maximum Junction-to-Ambientb, f| t £ 5 s| RthJA| 28| 36| °C/W
Maximum Junction-to-Case (Drain)| Steady State| RthJC| 5.3| 6.5

Notes:

• Based on TC = 25 °C.
• Surface mounted on 1″ x 1″ FR4 board.
• t = 5 s.
• See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection.
• Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
• Maximum under steady state conditions is 80 °C/W.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted

Parameter| Symbol| Test Conditions| Min.| Typ.| Max.| Unit
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 µA| 100| | | V
VDS Temperature Coefficient| DVDS/TJ| ID = 250 µA| | 54| | mV/°C
VGS(th) Temperature Coefficient| DVGS(th)/TJ| | – 4.4|
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 µA| 1.6| | 3| V
Gate-Source Leakage| IGSS| VDS = 0 V, VGS = ± 20 V| | | ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 100 V, VGS = 0 V| | | 1| µA
VDS = 100 V, VGS = 0 V, TJ = 55 °C| | | 10
On-State Drain Currenta| ID(on)| VDS ³ 5 V, VGS = 10 V| 10| | | A
Drain-Source On-State Resistancea| RDS(on)| VGS = 10 V, ID = 3.2 A| | 0.068| 0.083| W
VGS = 4.5 V, ID = 2.6 A| | 0.092| 0.130
Forward Transconductancea| gfs| VDS = 10 V, ID = 3.2 A| | 8| | S
Dynamic b
Input Capacitance| Ciss| VDS = 50 V, VGS = 0 V, f = 1 MHz| | 295| | pF
Output Capacitance| Coss| | 92|
Reverse Transfer Capacitance| Crss| | 16|
Total Gate Charge| Qg| VDS = 50 V, VGS = 10 V, ID = 4.8 A| | 6.5| 10| nC
VDS = 50 V, VGS = 4.5 V, ID = 4.8 A| | 3.5| 5.3
Gate-Source Charge| Qgs| | 1.2|
Gate-Drain Charge| Qgd| | 1.9|
Output Charge| Qoss| VDS = 50 V, VGS = 0 V| | 7.6|
Gate Resistance| Rg| f = 1 MHz| 0.4| 1.8| 3.6| W
Turn-On Delay Time| td(on)| VDD = 50 V, RL = 12.8 W
ID @ 3.9 A, VGEN = 10 V, Rg = 1 W| | 5| 10| ns
Rise Time| tr| | 13| 25
Turn-Off Delay Time| td(off)| | 10| 20
Fall Time| tf| | 10| 20
Turn-On Delay Time| td(on)| VDD = 50 V, RL = 12.8 W
ID @ 3.9 A, VGEN = 4.5 V, Rg = 1 W| | 25| 50
Rise Time| tr| | 100| 200
Turn-Off Delay Time| td(off)| | 15| 30
Fall Time| tf| | 25| 50
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| TC = 25 °C| | | 12| A
Pulse Diode Forward Currenta| ISM| | | | 15
Body Diode Voltage| VSD| IS = 3.9 A| | 0.85| 1.2| V
Body Diode Reverse Recovery Time| trr| IF = 3.9 A, dI/dt = 100 A/µs, TJ = 25 °C| | 30| 60| ns
Body Diode Reverse Recovery Charge| Qrr| | 30| 60| nC
Reverse Recovery Fall Time| ta| | 20| | ns
Reverse Recovery Rise Time| tb| | 10|

Notes:

• Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
• Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Safe Operating Area, Junction-to-Ambient
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

• The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating , when this rating falls below the package limit.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63649.

PowerPAK® SC70-6L

Notes:

1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating

ECN: C-07431 – Rev. C, 06-Aug-07 DWG: 5934

RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single

Dimensions in mm/(Inches)

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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