VISHAY SI4835DDY Transistor P Mosfet Owner’s Manual

: August 13, 2024
: VISHAY

Table of Contents

VISHAY SI4835DDY Transistor P Mosfet
Product Information
Usage Instructions
FEATURES
TYPICAL CHARACTERISTICS
Disclaimer
References
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VISHAY SI4835DDY Transistor P Mosfet

Product Information

Specifications

Brand: Vishay Siliconix
Model: Si4835DDY
Type: P-Channel MOSFET
Package: SO-8
Maximum Drain-Source Voltage (VDS): -30V
Maximum RDS(on) at VGS = -10V: 0.018Ω
Maximum RDS(on) at VGS = -4.5V: 0.030Ω
Gate Charge (Qg): 22nC (typical)
Continuous Drain Current (ID): -13A
Configuration: Single

Features

For definitions of compliance, visit www.vishay.com/doc?99912

Applications

P-Channel MOSFET applications
Ordering Information
Lead (Pb)-free: Si4835DDY-T1-E3
Lead (Pb)-free and halogen-free: Si4835DDY-T1-GE3

Usage Instructions

Ensure proper lead connections.
Observe voltage and current limitations.
Refer to the datasheet for detailed electrical characteristics.

FAQ

Q: What is the maximum drain-source voltage for the Si4835DDY MOSFET?
A: The maximum drain-source voltage is -30V.
Q: What is the typical gate charge for this MOSFET?
A: The typical gate charge is 22nC.
Q: Where can I find compliance definitions for this product?
A: You can find compliance definitions at www.vishay.com/doc?99912.

Si4835DDY
Vishay Siliconix
www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

TrenchFET® power MOSFET
100 % Rg and UIS tested
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

Load switches
Notebook PCs
Desktop PCs

PRODUCT SUMMARY

VDS (V)| -30
RDS(on) max. (W) at VGS = -10 V| 0.018
RDS(on) max. (W) at VGS = -4.5 V| 0.030
Qg typ. (nC)| 22
ID (A) d| -13
Configuration| Single
ORDERING INFORMATION

Package| SO-8
Lead (Pb)-free| Si4835DDY-T1-E3
Lead (Pb)-free and halogen-free| Si4835DDY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -30| V
Gate-source voltage| VGS| ±25
Continuous drain current (TJ = 150 °C)| TC = 25 °C| ID| -13| A
TC = 70 °C| -10.5
TA = 25 °C| -8.7 a, b
TA = 70 °C| -7.7 a, b
Pulsed drain current| IDM| -50
Continuous source-drain diode current| TC = 25 °C| IS| -4.6
TA = 25 °C| 2 a, b
Avalanche current| L = 0.1 mH| IAS| -20
Single-pulse avalanche energy| EAS| 20| mJ
Maximum power dissipation| TC = 25 °C| PD| 5.6| W
TC = 70 °C| 3.6
TA = 25 °C| 2.5 a, b
TA = 70 °C| 1.6 a, b
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
THERMAL RESISTANCE RATINGS

Notes

Surface mounted on 1″ x 1″ FR4 board
t = 10 s
Maximum under steady state conditions is 85 °C/W
Based on TC = 25 °C

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -30| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = -250 μA| –| -31| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| –| 5.5| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -1| –| -3| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 25 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -30 V, VGS = 0 V| –| –| -1| μA
VDS = -30 V, VGS = 0 V, TJ = 55 °C| –| –| -5
On-state drain current a| ID(on)| VDS ³ -10 V, VGS = -10 V| -30| –| –| A
Drain-source on-state resistance a| RDS(on)| VGS = -10 V, ID = -10 A| –| 0.0140| 0.0180| W
VGS = -4.5 V, ID = -7 A| –| 0.0245| 0.0300
Forward transconductance a| gfs| VDS = -10 V, ID = -10 A| –| 23| –| S
Dynamic b
Input capacitance| Ciss| VDS = -15 V, VGS = 0 V, f = 1 MHz| –| 1960| –|

pF

Output capacitance| Coss| –| 380| –
Reverse transfer capacitance| Crss| –| 325| –
Total gate charge| Qg| VDS = -15 V, VGS = -10 V, ID = -10 A| –| 43| 65|

nC

VDS = -15 V, VGS = -4.5 V, ID = -10 A| –| 22| 33
Gate-source charge| Qgs| –| 6| –
Gate-drain charge| Qgd| –| 11| –
Gate resistance| Rg| f = 1 MHz| 0.3| 1.3| 2.5| W
Turn-on delay time| td(on)|

VDD = -15 V, RL = 3 W
ID @ -5 A, VGEN = -10 V, Rg = 1 W

| –| 11| 22| ns
Rise time| tr| –| 13| 25
Turn-off delay time| td(off)| –| 32| 50
Fall time| tf| –| 9| 18
Turn-on delay time| td(on)|

VDD = -15 V, RL = 3 W
ID @ -5 A, VGEN = -4.5 V, Rg = 1 W

| –| 44| 70
Rise time| tr| –| 100| 160
Turn-off delay time| td(off)| –| 28| 50
Fall time| tf| –| 15| 30
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| -4.6| A
Pulse diode forward current| ISM| | –| –| -50
Body diode voltage| VSD| IS = -2 A, VGS = 0 V| –| -0.75| -1.2| V
Body diode reverse recovery time| trr| IF = -2 A, di/dt = 100 A/μs, TJ = 25 °C| –| 28| 45| ns
Body diode reverse recovery charge| Qrr| –| 20| 40| nC
Reverse recovery fall time| ta| –| 13| –| ns
Reverse recovery rise time| tb| –| 15| –

Notes

Pulse test; pulse width 300 μs, duty cycle 2 %
Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Note
The power dissipation PD is based on TJ max. = 150 °C, using junction-to- case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?69953.

SOIC (NARROW): 8-LEAD JEDEC
Part Number : MS-012

DIM

| MILLIMETERS| INCHES
---|---|---
Min| Max| Min| Max
A| 1.35| 1.75| 0.053| 0.069
A1| 0.10| 0.20| 0.004| 0.008
B| 0.35| 0.51| 0.014| 0.020
C| 0.19| 0.25| 0.0075| 0.010
D| 4.80| 5.00| 0.189| 0.196
E| 3.80| 4.00| 0.150| 0.157
e| 1.27 BSC| 0.050 BSC
H| 5.80| 6.20| 0.228| 0.244
h| 0.25| 0.50| 0.010| 0.020
L| 0.50| 0.93| 0.020| 0.037
q| 0°| 8°| 0°| 8°
S| 0.44| 0.64| 0.018| 0.026
ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

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Disclaimer

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Document Number: 91000
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