VISHAY SiJK140E N-Channel 40 V D-S MOSFET Owner’s Manual

VISHAY SiJK140E N-Channel 40 V D-S MOSFET

Product Information

Specifications

• Brand: Vishay Siliconix
• Model: SiJK140E
• Type: N-Channel MOSFET
• Maximum Drain-Source Voltage (VDS): 40 V
• Maximum Drain-Source On-State Resistance (RDS(on)): 0.00047 Ω at VGS = 10 V
• Typical Gate Charge (Qg): 312 nC
• Continuous Drain Current (ID): 795 A
• Configuration: Single

Product Usage Instructions

Installation

1. Ensure that the power is completely turned off before installation.
2. Identify the correct orientation of the MOSFET based on the markings on the device.
3. Carefully connect the drain, gate, and source terminals to their respective components in the circuit.

Operation

1. Apply the appropriate gate-source voltage to turn the MOSFET on and off as required by your circuit.
2. Avoid exceeding the maximum ratings specified to prevent damage to the device.

Maintenance

1. Regularly inspect the MOSFET for any signs of physical damage or overheating.
2. Keep the device clean and free from dust or debris that could affect its performance.

FAQ

• Q: What is the maximum power dissipation of the SiJK140E MOSFET?
  A: The maximum power dissipation is 487 W as per the specifications.

• Q: How should I store the MOSFET when not in use?
  A: Store the MOSFET in a cool, dry place away from direct sunlight and moisture to maintain its performance.

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 40
RDS(on) max. (W) at VGS = 10 V| 0.00047
Qg typ. (nC)| 312
ID (A) a| 795
Configuration| Single

FEATURES

• TrenchFET® Gen V power MOSFET
• Leadership RDS(on) minimizes power loss from conduction
• 100 % Rg and UIS tested
• Standard level FET
• Enhance power dissipation and lower RthJC
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

APPLICATIONS

• Synchronous rectification
• Automation
• OR-ing and hot swap switch
• Power supplies
• Motor drive control
• Battery management

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 40| V
Gate-source voltage| VGS| ± 20

Continuous drain current (TJ = 175 °C)

| TC = 25 °C|

ID

| 795|

A

TC = 100 °C| 562
TA = 25 °C| 140 b, c
TA = 100 °C| 99 b, c
Pulsed drain current (t = 100 μs)| IDM| 900
Continuous source-drain diode current| TC = 25 °C| IS| 487
TA = 25 °C| 15 b, c
Single pulse avalanche current| L = 0.1 mH| IAS| 100
Single pulse avalanche energy| EAS| 500| mJ

Maximum power dissipation

| TC = 25 °C|

PD

| 536|

W

TC = 100 °C| 268
TA = 25 °C| 17 b, c
TA = 100 °C| 8.3 b, c
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) c|  | 260

THERMAL RESISTANCE RATINGS

Notes

• TC = 25 °C
• Surface mounted on 1″ x 1″ FR4 board
• t = 10 s
• See solder profile (www.vishay.com/doc?73257). The PowerPAK 10 x 12 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom-side solder interconnection
• Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components
• Maximum under steady-state conditions is 39 °C/W

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 40| –| –| V
VDS temperature coefficient| DVDS/TJ| ID = 10 mA| –| 22| –| mV/°C
VGS(th) temperature coefficient| DVGS(th)/TJ| ID = 250 μA| –| -8.7| –
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.4| –| 3.5| V
Gate-source leakage| IGSS| VDS = 0 V, VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 40 V, VGS = 0 V| –| –| 1| μA
VDS = 40 V, VGS = 0 V, TJ = 55 °C| –| –| 10
Drain-source on-state resistance a| RDS(on)| VGS = 10 V, ID = 20 A| –| 0.00034| 0.00047| W
Forward transconductance a| gfs| VDS = 25 V, ID = 100 A| –| 450| –| S
Dynamic b
Input capacitance| Ciss|

VDS = 20 V, VGS = 0 V, f = 1 MHz

| –| 18 510| –|

pF

Output capacitance| Coss| –| 8540| –
Reverse transfer capacitance| Crss| –| 555| –
Total gate charge| Qg|

VDS = 40 V, VGS = 10 V, ID = 20 A

| –| 312| 470|

nC

Gate-source charge| Qgs| –| 84| –
Gate-drain charge| Qgd| –| 70| –
Output charge| Qoss| VDS = 20 V, VGS = 0 V| –| 220| –
Gate resistance| Rg| f = 1 MHz| 0.22| 1.1| 2.2| W
Turn-on delay time| td(on)|

VDD = 20 V, RL = 4 W, ID @ 10 A, VGEN = 10 V, Rg = 1 W

| –| 40| 80|

ns

Rise time| tr| –| 45| 90
Turn-off delay time| td(off)| –| 85| 170
Fall time| tf| –| 45| 90
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| TC = 25 °C| –| –| 487| A
Pulse diode forward current| ISM|  | –| –| 900
Body diode voltage| VSD| IS = 10 A, VGS = 0 V| –| 0.7| 1.1| V
Body diode reverse recovery time| trr|

IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C

| –| 105| 210| ns
Body diode reverse recovery charge| Qrr| –| 310| 620| nC
Reverse recovery fall time| ta| –| 64| –| ns
Reverse recovery rise time| tb| –| 41| –

Notes

• Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
• Guaranteed by design, not subject to production testing

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and the functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Note
The power dissipation PD is based on TJ max. = 150 °C, using junction-to- case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating when this rating falls below the package limit.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62451.

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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