IRF634 Vishay Siliconix Power Mosfet Owner’s Manual

IRF634 Vishay Siliconix Power Mosfet Owner’s Manual

Product Information

Specifications

• Brand:  Vishay Siliconix
• Model:  IRF9630
• Package Type:  TO-220AB
• Configuration:  Single P-Channel MOSFET
• Maximum Drain-Source Voltage (VDS):  -200 V
• Maximum Drain-Source On-Resistance (RDS(on)):  5.4 Ω
• Maximum Gate Charge (Qg):  15 nC
• Gate-Source Charge (Qgs):  5.4 nC
• Gate-Drain Charge (Qgd):  15 nC

• ---

Description
The Vishay Siliconix IRF9630 is a third-generation power MOSFET that offers fast switching, ruggedized device design, low on-resistance, and cost- effectiveness. It is designed for use in various commercial-industrial applications with power dissipation levels up to
approximately 50 W. The TO-220AB package is widely preferred in the industry due to its low thermal resistance and cost-effectiveness.

Ordering Information
To order the IRF9630 MOSFET, you can choose between the following options:

• Package Type:  TO-220AB
• Lead (Pb)-free:  IRF9630PbF
• • Lead (Pb)-free and halogen-free:  IRF9630PbF-BE3

Thermal Resistance Ratings

• Maximum Junction-to-Ambient:  Not specified
• Case-to-Sink, Flat, Greased Surface:  0.50 °C/W
• • Maximum Junction-to-Case (Drain):  1.7 °C/W

Product Usage Instructions

 **Pin Description**

• Source (S):  Connected to the source of the MOSFET.
• Drain (D):  Connected to the drain of the MOSFET.
• Gate (G):  Connected to the gate of the MOSFET.

Usage Steps

1. Identify the Source (S), Drain (D), and Gate (G) pins on the IRF9630 MOSFET.
2. Connect the Source pin to the source terminal of your circuit.
3. Connect the Drain pin to the drain terminal of your circuit.
4. Connect the Gate pin to the gate terminal of your circuit.
5. Ensure proper electrical insulation and connections for safe operation.

FAQ

• Q: What is the maximum drain-source voltage (VDS) of the IRF9630 MOSFET?
  A: The maximum drain-source voltage is -200 V.

• Q: What is the maximum drain-source on-resistance (RDS(on)) of the IRF9630 MOSFET?
  A: The maximum drain-source on-resistance is 5.4 Ω.

• Q: What is the maximum gate charge (Qg) of the IRF9630 MOSFET?
  A: The maximum gate charge is 15 nC.

• Q: What is the gate-source charge (Qgs) of the IRF9630 MOSFET?
  A: The gate-source charge is 5.4 nC.

• Q: What is the gate-drain charge (Qgd) of the IRF9630 MOSFET?
  A: The gate-drain charge is 15 nC.

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• P-channel
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

Notes

• a.  Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
• b.  VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 Ω, IAS = -6.5 A (see fig. 12).
• c.  ISD ≤ -6.5 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
• d.  1.6 mm from case.

THERMAL RESISTANCE RATINGS

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST   CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -200| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.24| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -200 V, VGS = 0 V| –| –| -100| μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = -3.9 A b| –| –| 0.80| W
Forward transconductance| gfs| VDS = -50 V, ID = -3.9 A b| 2.8| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = -25 V,
f = 1.0 MHz, see fig. 5| –| 700| –| pF
Output capacitance| Coss| –| 200| –
Reverse transfer capacitance| Crss| –| 40| –
Total gate charge| Qg| VGS = -10 V| ID = -6.5 A, VDS = -160 V,see fig. 6 and 13 b| –| –| 29| nC
Gate-source charge| Qgs| –| –| 5.4
Gate-drain charge| Qgd| –| –| 15
Turn-on delay time| td(on)| VDD = -100 V, ID = -6.5 A,
Rg = 12 W, RD = 15 W, see fig. 10 b| –| 12| –| ns
Rise time| tr| –| 27| –
Turn-off delay time| td(off)| –| 28| –
Fall time| tf| –| 24| –
Gate input resistance| LD| Between lead, 6 mm (0.25″) from package and center of die contact

| –| 4.5| –| nH
Internal drain inductance| LS| –| 7.5| –
Internal source inductance| Rg| f = 1 MHz, open drain| 0.6| –| 3.7| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol  showing the integral reverse p -n junction diode

| –| –| -6.5| A
Pulsed diode forward current a| ISM| –| –| -26
Body diode voltage| VSD| TJ = 25 °C, IS = -6.5 A, VGS = 0 V b| –| –| -6.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/μs b| –| 200| 300| ns
Body diode reverse recovery charge| Qrr| –| 1.9| 2.9| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• a.  Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
• b.  Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91084.

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any liability arising out of the application or use of any product, (ii) any liability, including without limitation special, consequential or incidental damages, and (iii) any implied warranties, including warranties of fitness for a particular purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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