VISHAY IRF620PBF Power MOSFET Owner’s Manual
- June 21, 2024
- VISHAY
Table of Contents
- VISHAY IRF620PBF Power MOSFET
- Power MOSFET
- FEATURES
- ORDERING INFORMATION
- THERMAL RESISTANCE RATINGS
- TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
- Peak Diode Recovery dV/dt Test Circuit
- Disclaimer
- Specifications
- FAQ
- References
- Read User Manual Online (PDF format)
- Download This Manual (PDF format)
VISHAY IRF620PBF Power MOSFET
OWNER’S MANUAL
Power MOSFET
FEATURES
- Dynamic dv/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 6.1 mH, Rg = 25 Ω, IAS = 5.2 A (see
fig. 12)
c. ISD ≤ 5.2 A, di/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see
fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91027.
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of
applications are based on Vishay’s knowledge of typical requirements that are
often placed on Vishay products in generic applications. Such statements are
not binding statements about the suitability of products for a particular
application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable
for use in a particular application. Parameters provided in datasheets and /
or specifications may vary in different applications and performance may vary
over time. All operating parameters, including typical parameters, must be
validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and
conditions of purchase, including but not limite d to the warranty expressed
therein.
Hyperlinks included in this datasheet may direct users to third-party
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustainin g applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
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© 2024 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Specifications
-
Brand: Vishay Siliconix
-
Product Name: IRF620 Power MOSFET
-
Package Type: TO-220AB
-
Channel Type: N-Channel MOSFET
-
Drain-Source Voltage (VDS): 200V
-
On-Resistance (RDS(on)): 3.0 Ohms
-
Gate Charge (Qg max.): 14nC
-
Configuration: Single
-
-
FAQ
Q: What are the lead-free options for the IRF620?
A: The lead-free options are IRF620PbF and IRF620PbF-BE3.
Q: What is the maximum drain-source voltage supported by the IRF620?
A: The maximum drain-source voltage (VDS) is 200V.
Q: What is the typical thermal resistance junction-to-ambient for the
IRF620?
A: The typical thermal resistance junction-to-ambient is 62°C/W.
References
Read User Manual Online (PDF format)
Read User Manual Online (PDF format) >>