VISHAY IRFU110 Power Mosfet Owner’s Manual

VISHAY IRFU110 Power Mosfet

Product Information

Specifications

• Brand: Vishay Siliconix
• Model: IRFU110, SiHFU110
• Configuration: Single
• Package: IPAK (TO-251)
• Drain-Source Voltage (VDS): 100V
• Gate-Source Voltage (VGS): 10V
• Continuous Drain Current (ID): 8.3A
• On-State Resistance (RDS(on)): 2.3Ω
• Total Gate Charge (Qg Max.): 3.8nC

Product Usage Instructions

Installation

1. Ensure the power MOSFET is suitable for your application based on the specifications provided.
2. Connect the drain, gate, and source pins of the MOSFET according to your circuit design.
3. Make sure the soldering recommendations are followed during installation for proper connection.

Operation

1. Apply the appropriate voltage levels to the gate and source pins as per the VGS value specified.
2. Avoid exceeding the maximum drain-source voltage (VDS) to prevent damage to the MOSFET.
3. Monitor the continuous drain current (ID) to stay within the rated limits for safe operation.

Maintenance

1. Regularly check for overheating during operation, which can indicate a potential issue.
2. Inspect the connections for any signs of damage or loose wiring that may affect performance.

Frequently Asked Questions

Is this MOSFET suitable for high-power applications?

Yes, the IRFU110 and SiHFU110 models are designed for applications requiring up to 100V drain-source voltage and 8.3A continuous drain current.

Can I use this MOSFET in a lead-free environment?

Yes, both lead-free and halogen-free versions of the product are available for environmentally conscious applications.

What is the typical gate-source charge for this MOSFET?

The maximum gate charge (Qg) specified is 3.8nC, which is crucial for controlling switching characteristics in circuits.

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 100
RDS(on) (W)| VGS = 10 V| 0.54
Qg (Max.) (nC)| 8.3
Qgs (nC)| 2.3
Qgd (nC)| 3.8
Configuration| Single

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition
• Straight Lead
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

ORDERING INFORMATION

ORDERING INFORMATION

Package| IPAK (TO-251)
Lead (Pb)-free and Halogen-free| SiHFU110-GE3
Lead (Pb)-free| IRFU110PbF
SiHFU110-E3
SnPb| IRFU110
SiHFU110

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 100| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 4.3|

A

TC = 100 °C| 2.7
Pulsed Drain Currenta| IDM| 17
Linear Derating Factor| | 0.2| W/°C
Single Pulse Avalanche Energyb| EAS| 75| mJ
Repetitive Avalanche Currenta| IAR| 4.3| A
Repetitive Avalanche Energya| EAR| 2.5| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 25| W
Peak Diode Recovery dV/dtc| dV/dt| 5.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Soldering Recommendations (Peak Temperature)| for 10 s| | 300d

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

• b. VDD = 25 V, starting TJ = 25 °C, L = 8.1 mH, Rg = 25 , IAS = 4.3 A (see fig. 12).

• c. ISD  5.6 A, dI/dt  75 A/μs, VDD  VDS, TJ  150 °C.

• d. 1.6 mm from case.

• Pb containing terminations are not RoHS compliant, exemptions may apply

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| –| 110|

°C/W

Maximum Junction-to-Case (Drain)| RthJC| –| –| 5.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT|
Static|
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 100| –| –| V|
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.63| –| V/°C|
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V|
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|

Zero Gate Voltage Drain Current

| IDSS| VDS = 100 V, VGS = 0 V| –| –| 25|

μA

|
VDS = 80 V, VGS = 0 V, TJ = 125 °C| –| –| 250|
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 0.90 Ab| –| –| 0.54| W|
Forward Transconductance| gfs| VDS = 50 V, ID = 0.90 A| 1.1| –| –| S|
Dynamic|
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 180| –|

pF

|
Output Capacitance| Coss| –| 81| –|
Reverse Transfer Capacitance| Crss| –| 15| –|
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 5.6 A, VDS = 80 V,

see fig. 6 and 13b

| –| –| 8.3|

nC

|
Gate-Source Charge| Qgs| –| –| 2.3|
Gate-Drain Charge| Qgd| –| –| 3.8|
Turn-On Delay Time| td(on)|

VDD = 50 V, ID = 5.6 A,

Rg = 24 W, RD = 8.4 W, see fig. 10b

| –| 6.9| –|

ns

|
Rise Time| tr| –| 16| –|
Turn-Off Delay Time| td(off)| –| 15| –|
Fall Time| tf| –| 9.4| –|
Internal Drain Inductance| LD| Between lead,| |

D

S

| | –| 4.0| –| |
6 mm (0.25″) from package and center of|

G

| nH|
Internal Source Inductance| LS| –| 6.0| –|
die contact| | |
Drain-Source Body Diode Characteristics|
Continuous Source-Drain Diode Current| IS| MOSFET symbol| | |

D

S

| –| –| 1.5| |
showing the integral reverse|

G

| A|
Pulsed Diode Forward Currenta| ISM| –| –| 12|
p – n junction diode| | |
Body Diode Voltage| VSD| TJ = 25 °C, IS = 1.5 A, VGS = 0 Vb| –| –| 2.5| V|
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb| –| 100| 200| ns|
Body Diode Reverse Recovery Charge| Qrr| –| 0.44| 0.88| μC|
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)|

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91397.

Legal Disclaimer Notice

Disclaimer

• ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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