VISHAY IRFD220 Power Mosfet Owner’s Manual

: June 1, 2024
: VISHAY

Table of Contents

FEATURES
DESCRIPTION
PRODUCT SUMMARY
ORDERING INFORMATION
THERMAL RESISTANCE RATINGS
SPECIFICATIONS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Disclaimer
Customer Support
References
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VISHAY IRFD220 Power Mosfet

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
For automatic insertion
End stackable
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Features

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1″ pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

PRODUCT SUMMARY

ORDERING INFORMATION

Package| HVMDIP
Lead (Pb)-free| IRFD220PbF
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 200| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TA = 25 °C| ID| 0.80| A
TA = 100 °C| 0.50
Pulsed drain current a| IDM| 6.4
Linear derating factor| | 0.0083| W/°C
Single pulse avalanche energy b| EAS| 260| mJ
Repetitive avalanche current a| IAR| 5.2| A
Repetitive avalanche energy a| EAR| 0.10| mJ
Maximum power dissipation| TA = 25 °C| PD| 1.0| W
Peak diode recovery dV/dt c| dV/dt| 5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature)| For 10 s| | 300d

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 152 mH, Rg = 25 Ω, IAS = 1.6 A (see fig. 12)
c. ISD ≤ 5.2 A, dI/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
d. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 120| °C/W

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 200| –| –| V
VDS Temperature Coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.29| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 200 V, VGS = 0 V| –| –| 25| μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 0.48 Ab| –| –| 0.80| Ù
Forward Transconductance| gfs| VDS = 50 V, ID = 0.48 Ab| 0.60| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5| –| 260| –| pF
Output Capacitance| Coss| –| 100| –
Reverse Transfer Capacitance| Crss| –| 30| –
Total Gate Charge| Qg| VGS = 10 V| ID = 4.8 A, VDS = 160 V, see fig.6 and 13b| –| –| 14| nC
Gate-Source Charge| Qgs| –| –| 3.0
Gate-Drain Charge| Qgd| –| –| 7.9
Turn-On Delay Time| td(on)| VDD = 100 V, ID = 4.8 A, Rg = 18 Ù, RD = 19 Ù, see fig. 10b| –| 7.2| –| ns
Rise Time| tr| –| 22| –
Turn-Off Delay Time| td(off)| –| 19| –
Fall Time| tf| –| 13| –
Internal Drain Inductance| LD| Between lead,
6 mm (0.25″) from
package and center of
die contact
| –| 4.0| –| nH
Internal Source Inductance| LS| –| 6.0| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol
showing the
integral reverse
p – n junction diode
| –| –| 0.80| A
Pulsed Diode Forward Currenta| ISM| –| –| 6.4
Body Diode Voltage| VSD| TJ = 25 °C, IS = 0.80 A, VGS = 0 Vb| –| –| 1.8| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 4.8 A, dI/dt = 100 A/μsb| –| 150| 300| ns
Body Diode Reverse Recovery Charge| Qrr| –| 0.91| 1.8| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TA = 25 °C
Fig. 2 – Typical Transfer Characteristics
Fig. 1 – Typical Output Characteristics, TA = 150 °C
Fig. 3 – Normalized On-Resistance vs. Temperature
Fig. 4 – Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 – Typical Source-Drain Diode Forward Voltage
Fig. 5 – Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 – Maximum Safe Operating Area
Fig. 8 – Maximum Drain Current vs. Ambient Temperature
Fig. 10a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveforms
Fig. 9 – Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig. 12a – Unclamped Inductive Test Circuit
Fig. 12b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current
Fig. 13a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit
Fig. 10 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91131.

HVM DIP (High voltage)

Typical Characteristics

| INCHES| MILLIMETERS
---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.
A| 0.310| 0.330| 7.87| 8.38
E| 0.300| 0.425| 7.62| 10.79
L| 0.270| 0.290| 6.86| 7.36
ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974

Note

Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions.

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Customer Support

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