VISHAY SiHFPF40 Power MOSFET Owner’s Manual

: June 3, 2024
: VISHAY

Table of Contents

SiHFPF40 Power MOSFET
FEATURES
DESCRIPTION
- Notes
- Notes
Documents / Resources

IRFPF40, SiHFPF40
Vishay Siliconix
Power MOSFET
Owner’s Manual

SiHFPF40 Power MOSFET

PRODUCT SUMMARY

VISHAY SiHFPF40 Power MOSFET

*RoHS
COMPLIANT**

FEATURES

Dynamic DV/DT Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant with RoHS Directive 2002/95/EC

DESCRIPTION

Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar to but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFPF40PbF
SiHFPF40-E3
SnPb| IRFPF40
SiHFPF40
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 900| V
Gate-Source Voltage| VGS| ± 20
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 4.7|

A

TC = 100 °C| 2.9
Pulsed Drain Current| IDM| 19
Linear Derating Factor| | 1.2| W/°C
Single Pulse Avalanche Energy| EAS| 500| MJ
Repetitive Avalanche Current| IAR| 4.7| A
Repetitive Avalanche Energy| EAR| 15| MJ
Maximum Power Dissipation| TC = 25 °C| PD| 150| W
Peak Diode Recovery dv/DTC| DV/DT| 1.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Soldering Recommendations (Peak Temperature)| for 10 s| | 300d
Mounting Torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 42 mH, Rg = 25 Ω, IAS = 4.7 A (see fig. 12).
c. ISD ≤ 4.7 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from the case.

Pb containing terminations are not RoHS compliant, exemptions may apply

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 40| °C/W
Case-to-Sink, Flat, Greased Surface| RthCS| 0.24| –
Maximum Junction-to-Case (Drain)| RthJC| –| 0.83
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 900| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 1.0| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 900 V, VGS = 0 V| –| –| 100| μA
VDS = 720 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 2.8 Ab| –| –| 2.5| L
Forward Transconductance| gfs| VDS = 50 V, ID = 2.8 Ab| 2.5| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5| –| 1600| –| pF
Output Capacitance| Coss| –| 180| –
Reverse Transfer Capacitance| Crss| –| 63| –
Total Gate Charge| Qg| VGS = 10 V| ID = 4.7 A, VDS = 360 V, see fig. 6 and 13b| –| –| 120| nC
Gate-Source Charge| Qgs| –| –| 16
Gate-Drain Charge| Qgd| –| –| 67
Turn-On Delay Time| td(on)| VDD = 450 V, ID = 4.7 A ,
Rg = 9.1 L, RD = 95 L, see fig. 10b| –| 15| –| ns
Rise Time| tr| –| 36| –
Turn-Off Delay Time| td(off)| –| 110| –
Fall Time| tf| –| 32| –
Internal Drain Inductance| LD| Between lead,6 mm (0.25″) from the package and center of the die contact| –| 5.0| –| nH
Internal Source Inductance| LS| –| 13| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse p – n junction diode | –| –| 4.7| A
Pulsed Diode Forward Current| ISM| –| –| 19
Body Diode Voltage| VSD| TJ = 25 °C, IS = 4.7 A, VGS = 0 Vb| –| –| 1.8| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 4.7 A, dI/dt = 100 A/μsb| –| 510| 770| ns
Body Diode Reverse Recovery Charge| Qrr| –| 2.2| 3.3| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY SiHFPF40 Power MOSFET - FIGURE 1 VISHAY
SiHFPF40 Power MOSFET - FIGURE 2

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91250.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

VISHAY SiHFPF40 Power MOSFET - FIGURE 6

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.83| 5.21|
A1| 2.29| 2.55|
A2| 1.50| 2.49|
b| 1.12| 1.33|
b1| 1.12| 1.28|
b2| 1.91| 2.39| 6
b3| 1.91| 2.34|
b4| 2.87| 3.22| 6, 8
b5| 2.87| 3.18|
c| 0.55| 0.69| 6
c1| 0.55| 0.65|
D| 20.40| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D1| 16.25| 16.85| 5
D2| 0.56| 0.76|
E| 15.50| 15.87| 4
E1| 13.46| 14.16| 5
E2| 4.52| 5.49| 3
e| 5.44 BSC|
L| 14.90| 15.40|
L1| 3.96| 4.16| 6
Ø P| 3.56| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.69|
S| 5.54| 5.74|

Notes

Package reference: JEDEC® TO247, variation AC
All dimensions are in mm
Slot required, notch may be rounded
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at the maximum material condition

VERSION 2: FACILITY CODE = Y

VISHAY SiHFPF40 Power MOSFET - FIGURE 7

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
The contour of slot optional
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
Outline conforms to JEDEC outline TO-247 with exception of dimension c

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VERSION 3: FACILITY CODE = N

VISHAY SiHFPF40 Power MOSFET - FIGURE 8

| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E20-0545-Rev. F, 19-Oct-2020 DWG: 5971

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994
The contour of the slot optional
Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer
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Revision: 19-Oct-2020
Document Number: 91360
www.vishay.com