VISHAY Si4483ADY Rutronik Distributor Instruction Manual

VISHAY Si4483ADY Rutronik Distributor

Specifications

Product Usage Instructions

• Applications
  • This P-Channel MOSFET Si4483ADY by Vishay Siliconix can be used in various applications such as S-G circuits.
• Ordering Information
  • To order, use the part number Si4483ADY-T1-GE3 for the Lead (Pb)-free and Halogen-free version of the product.
• Thermal Resistance Ratings
  • The maximum Junction-to-Ambient thermal resistance (RthJA) is 42°C/W, and the maximum Junction-to-Foot thermal resistance (RthJF) is 21°C/W.
• Static Parameters
  • Key static parameters include Drain-Source Breakdown Voltage, Gate-Source Threshold Voltage, and On-State Drain Current among others.
• Dynamic Parameters
  • Important dynamic parameters include Turn-On Delay Time, Rise Time, Turn-Off Delay Time, and Fall Time.

FAQs

• Q: What are the typical applications of Si4483ADY MOSFET?
  • A: The Si4483ADY MOSFET can be used in S-G circuits for various electronic applications.
• Q: How can I order the lead-free and halogen-free version of Si4483ADY?
  • A: To order the lead-free and halogen-free versions, use the part number Si4483ADY-T1-GE3 when making a purchase.
• Q: What are the thermal resistance ratings for this MOSFET?
  • A: The maximum Junction-to-Ambient thermal resistance is 42°C/W, and the maximum Junction-to-Foot thermal resistance is 21°C/W.

PRODUCT SUMMARY

PRODUCT SUMMARY

V DS (V)| R DS(on) ( W )| I D (A) d| Q g (Typ.)
– 30| 0.0088 at VGS = – 10 V| – 19.2| 44.8 nC
0.0153 at VGS = – 4.5 V| – 14.6

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Adaptor Switch

Ordering Information

Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter| Symbol| Limit| Unit
Drain-Source Voltage| VDS| – 30| V
Gate-Source Voltage| VGS| ± 25
Continuous Drain Current (TJ = 150 °C)| TC = 25 °C| ID| – 19.2| A
TC = 70 °C| – 15.4
TA = 25 °C| – 13.5a, b
TA = 70 °C| – 10.9a, b
Pulsed Drain Current| IDM| – 70

Continuous Source-Drain Diode Current

| TC = 25 °C| IS| – 4.9
TA = 25 °C| – 2.4a, b
Avalanche Current|

L = 0.1 mH

| IAS| 20
Single-Pulse Avalanche Energy| EAS| 20| MJ
Maximum Power Dissipation| TC = 25 °C| PD| 5.9| W
TC = 70 °C| 3.8
TA = 25 °C| 2.9a, b
TA = 70 °C| 1.9a, b
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to 150| °C
THERMAL RESISTANCE RATINGS

Parameter| Symbol| Typical| Maximum| Unit
Maximum Junction-to-Ambienta, c| t £ 10 s| RthJA| 33| 42|

°C/W

Maximum Junction-to-Foot| Steady State| RthJF| 16| 21

Notes:

• a. Surface mounted on 1″ x 1″ FR4 board.
• b. t = 10 s.
• c. Maximum under steady state conditions is 85 °C/W.
• d. Based on TC = 25 °C.

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter| Symbol| Test Conditions| Min.| Typ.| Max.| Unit
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = – 250 µA| – 30|  |  | V
VDS Temperature Coefficient| DVDS/TJ| ID = – 250 µA|  | – 30|  |

mV/°C

VGS(th) Temperature Coefficient| DVGS(th)/TJ|  | 5.3|
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = – 250 µA| – 1.2| – 2.1| – 2.6| V
Gate-Source Leakage| IGSS| VDS = 0 V, VGS = ± 25 V|  |  | ± 100| nA

Zero Gate Voltage Drain Current

| IDSS| VDS = – 30 V, VGS = 0 V|  |  | – 1|

µA

VDS = – 30 V, VGS = 0 V, TJ = 55 °C|  |  | – 5
On-State Drain Current| ID(on)| VDS ³ – 10 V, VGS = – 10 V| – 30|  |  | A
Drain-Source On-State Resistance| RDS(on)| VGS = – 10 V, ID = – 10 A|  | 0.0073| 0.0088| W
VGS = – 4.5 V, ID = – 7 A|  | 0.0127| 0.0153
Forward Transconductance| gs| VDS = – 10 V, ID = – 10 A|  | 32|  | S
Dynamic
Input Capacitance| Ciss|

VDS = – 15 V, VGS = 0 V, f = 1 MHz

|  | 3900|  |

pF

Output Capacitance| Coss|  | 715|
Reverse Transfer Capacitance| Cross|  | 645|

Total Gate Charge

| Qg| VDS = – 15 V, VGS = – 10 V, ID = – 10 A|  | 90| 135|

nC

VDS = – 15 V, VGS = – 4.5 V, ID = – 10 A

|  | 44.8| 68
Gate-Source Charge| Qgs|  | 12.2|
Gate-Drain Charge| Qgd|  | 21.7|
Gate Resistance| Rg| f = 1 MHz| 0.4| 1.8| 3.6| W
Turn-On Delay Time| td(on)|

VDD = – 15 V, RL = 1.5 W

ID @ – 10 A, VGEN = – 10 V, Rg = 1 W

|  | 14| 28|

ns

Rise Time| tr|  | 13| 25
Turn-Off DelayTime| td(off)|  | 49| 90
Fall Time| tf|  | 13| 25
Turn-On Delay Time| td(on)|

VDD = – 15 V, RL = 1.5 W

ID @ – 10 A, VGEN = – 4.5 V, Rg = 1 W

|  | 70| 120
Rise Time| tr|  | 150| 280
Turn-Off DelayTime| td(off)|  | 43| 80
Fall Time| tf|  | 28| 55
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current| IS| TC = 25 °C|  |  | – 4.9|

A

Pulse Diode Forward Current| ISM|  |  |  | – 70
Body Diode Voltage| VSD| IS = – 3 A, VGS = 0 V|  | – 0.72| – 1.2| V
Body Diode Reverse Recovery Time| try|

IF = – 10 A, dI/dt = 100 A/µs, TJ = 25 °C

|  | 41| 70| ns
Body Diode Reverse Recovery Charge| Qrr|  | 41| 70| nC
Reverse Recovery Fall Time| ta|  | 18|  |

ns

Reverse Recovery Rise Time| tb|  | 23|

Notes:

• a. Pulse test; pulse width 300 μs, duty cycle 2 %.
• b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and the functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

• The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used.
• It is used to determine the current rating when this rating falls below the package limit.

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?68982.

• SOIC (NARROW): 8-LEAD
• JEDEC Part Number: MS-012

ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498

RECOMMENDED MINIMUM PADS FOR SO-8

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• Revision: 01-Jan-2024

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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