VISHAY IRL520LPBF Power Mosfet User Guide

June 1, 2024
VISHAY

VISHAY IRL520LPBF Power Mosfet

Product Information

Specifications

  • Product: IRL520L, SiHL520L Power MOSFET
  • Voltage Rating: 100V
  • RDS(on): 3.0 Ohms
  • Gate Charge (Max.): 7.1 nC
  • Configuration: Single
  • Package Type: I2PAK (TO-262)

FAQ

  • Q: Are the parts RoHS-compliant?
    • A: The datasheet provides information on RoHS-compliant and non-RoHS-compliant parts. Parts with lead (Pb) terminations are not RoHS-compliant.
  • Q: What is the recommended operating temperature range?
    • A: The operating junction and storage temperature range is -55°C to +175°C.
  • Q: How should I solder the product?
    • A: The recommended peak temperature for soldering is provided in the datasheet, typically for 10 seconds.

FEATURES

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Logic-level gate drive
  • RDS (on) specified at VGS = 4 V and 5 V
  • 175°C operating temperature
  • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

  • This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 100
RDS(on) (W)| VGS = 5 V| 0.27
Qg (Max.) (nC)| 12
Qgs (nC)| 3.0
Qgd (nC)| 7.1
Configuration| Single

DESCRIPTION

  • Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
  • The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package.

ORDERING INFORMATION

Package| I2PAK (TO-262)
Lead (Pb)-free and Halogen-free| SiHL520L-GE3
Lead (Pb)-free| IRL520LPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 100| V
Gate-Source Voltage| VGS| ± 10
Continuous Drain Current| VGS at 5 V| TC = 25 °C| ID| 9.2|

A

TC = 100 °C| 6.5
Pulsed Drain Current a| IDM| 36
Linear Derating Factor|  | 0.40| W/°C
Linear Derating Factor (PCB Mount)e| 0.025
Single Pulse Avalanche Energy b| EAS| 170| mJ
Avalanche Currenta| IAR| 9.2| A
Repetiitive Avalanche Energy a| EAR| 6.0| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 60| W
Peak Diode Recovery dV/dtc| dV/dt| 5.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 175| °C
Soldering Recommendations (Peak Temperature)| For 10 s|  | 300d

Notes

VISHAY-IRL520LPBF-Power-Mosfet-fig-13

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| 2.5

SPECIFICATIONS

VISHAY-IRL520LPBF-Power-Mosfet-fig-14

Notes

  • Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
  • Pulse width 300 μs; duty cycle 2 %

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VISHAY-IRL520LPBF-Power-Mosfet-fig-3 VISHAY-
IRL520LPBF-Power-Mosfet-fig-4 VISHAY-IRL520LPBF-Power-Mosfet-
fig-5 VISHAY-IRL520LPBF-Power-Mosfet-
fig-6 VISHAY-IRL520LPBF-Power-Mosfet-
fig-7 VISHAY-IRL520LPBF-Power-Mosfet-
fig-8 VISHAY-IRL520LPBF-Power-Mosfet-
fig-9

HIGH VOLTAGE

TO-263AB (HIGH VOLTAGE)

VISHAY-IRL520LPBF-Power-Mosfet-fig-10

  MILLIMETERS INCHES
DIM. MIN. MAX.
A 4.06 4.83
A1 0.00 0.25
b 0.51 0.99
b1 0.51 0.89
b2 1.14 1.78
b3 1.14 1.73
c 0.38 0.74
c1 0.38 0.58
c2 1.14 1.65
D 8.38 9.65

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

D1 6.86 0.270
E 9.65 10.67 0.380 0.420
E1 6.22 0.245
e 2.54 BSC 0.100 BSC
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.65 0.066
L2 1.78 0.070
L3 0.25 BSC 0.010 BSC
L4 4.78 5.28 0.188 0.208

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994.
  2. Dimensions are shown in millimeters (inches).
  3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
  4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
  5. Dimension b1 and c1 apply to base metal only.
  6. Datum A and B to be determined at datum plane H.
  7. Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

VISHAY-IRL520LPBF-Power-Mosfet-fig-11

  MILLIMETERS INCHES
DIM. MIN. MAX.
A 4.06 4.83
A1 2.03 3.02
b 0.51 0.99
b1 0.51 0.89
b2 1.14 1.78
b3 1.14 1.73
c 0.38 0.74
c1 0.38 0.58
c2 1.14 1.65
D 8.38 9.65
--- --- ---
D1 6.86
E 9.65 10.67
E1 6.22
e 2.54 BSC 0.100 BSC
L 13.46 14.10
L1 1.65
L2 3.56 3.71

Notes

  1. Dimensioning and tolerancing per ASME Y14.5M-1994.
  2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
  3. Thermal pad contour optional within dimension E, L1, D1, and E1.
  4. Dimension b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

VISHAY-IRL520LPBF-Power-Mosfet-fig-12

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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