VISHAY IRL520LPBF Power Mosfet User Guide

VISHAY IRL520LPBF Power Mosfet

Product Information

Specifications

• Product: IRL520L, SiHL520L Power MOSFET
• Voltage Rating: 100V
• RDS(on): 3.0 Ohms
• Gate Charge (Max.): 7.1 nC
• Configuration: Single
• Package Type: I2PAK (TO-262)

FAQ

• Q: Are the parts RoHS-compliant?
  • A: The datasheet provides information on RoHS-compliant and non-RoHS-compliant parts. Parts with lead (Pb) terminations are not RoHS-compliant.
• Q: What is the recommended operating temperature range?
  • A: The operating junction and storage temperature range is -55°C to +175°C.
• Q: How should I solder the product?
  • A: The recommended peak temperature for soldering is provided in the datasheet, typically for 10 seconds.

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Logic-level gate drive
• RDS (on) specified at VGS = 4 V and 5 V
• 175°C operating temperature
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 100
RDS(on) (W)| VGS = 5 V| 0.27
Qg (Max.) (nC)| 12
Qgs (nC)| 3.0
Qgd (nC)| 7.1
Configuration| Single

DESCRIPTION

• Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
• The I2PAK (TO-262) is a through hole power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package.

ORDERING INFORMATION

Package| I2PAK (TO-262)
Lead (Pb)-free and Halogen-free| SiHL520L-GE3
Lead (Pb)-free| IRL520LPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 100| V
Gate-Source Voltage| VGS| ± 10
Continuous Drain Current| VGS at 5 V| TC = 25 °C| ID| 9.2|

A

TC = 100 °C| 6.5
Pulsed Drain Current a| IDM| 36
Linear Derating Factor|  | 0.40| W/°C
Linear Derating Factor (PCB Mount)e| 0.025
Single Pulse Avalanche Energy b| EAS| 170| mJ
Avalanche Currenta| IAR| 9.2| A
Repetiitive Avalanche Energy a| EAR| 6.0| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 60| W
Peak Diode Recovery dV/dtc| dV/dt| 5.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 175| °C
Soldering Recommendations (Peak Temperature)| For 10 s|  | 300d

Notes

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| 2.5

SPECIFICATIONS

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width 300 μs; duty cycle 2 %

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

HIGH VOLTAGE

TO-263AB (HIGH VOLTAGE)

ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the utmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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