VISHAY IRF840L Power MOSFET Owner’s Manual

VISHAY IRF840L Power MOSFET

Product Information

Specifications

• Product Name: IRF840L, SiHF840L Vishay Siliconix Power MOSFET
• Package Type: I2PAK (TO-262)
• N-Channel MOSFET
• Maximum Drain-Source Voltage (VDS): 500V
• On-Resistance (RDS(on)): 9.3 Ohms
• Maximum Gate Charge (Qg max.): 32nC
• Configuration: Single

Description

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The I2PAK (TO-262) package is capable of accommodating die sizes up to HEX-4, providing high power capability and low on-resistance. It is suitable for high current applications due to its low internal connection resistance and can dissipate up to 2.0W.

Thermal Resistance Ratings

• Maximum Junction-to-Ambient: 62°C/W (Typical), 1.0°C/W (Maximum)
• Maximum Junction-to-Case (Drain): 1.0°C/W

Parameter Summary

• Drain-Source Breakdown Voltage (VDS)
• Gate-Source Voltage (VGS)
• Continuous Drain Current (ID)
• Pulsed Drain Current (IDM)
• Maximum Power Dissipation (PD)
• Soldering Recommendations: -55 to +150°C for 10s

Thermal Resistance Ratings

• Maximum Junction-to-Ambient: 62°C/W (Typical), 1.0°C/W (Maximum)
• Maximum Junction-to-Case (Drain): 1.0°C/W

Frequently Asked Questions

Q: Is the IRF840L MOSFET RoHS compliant?

A: This datasheet provides information about parts that are RoHS-compliant and/or non-RoHS-compliant. Please refer to the specific information/tables in the datasheet for details.

Q: What is the maximum power dissipation of the IRF840L MOSFET?

A: The IRF840L MOSFET can dissipate up to 2.0W.

Q: What is the maximum drain-source voltage of the IRF840L MOSFET?

A: The maximum drain-source voltage (VDS) of the IRF840L MOSFET is 500V.

Q: Can the IRF840L MOSFET be used in high-current applications?

A: Yes, the IRF840L MOSFET is suitable for high-current applications due to its low internal connection resistance.

OVERVIEW

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 0.85
Qg max. (nC)| 63
Qgs (nC)| 9.3
Qgd (nC)| 32
Configuration| Single
ORDERING INFORMATION

Package| I2PAK (TO-262)
Lead (Pb)-free and Halogen-free| SiHF840L-GE3
Lead (Pb)-free| IRF840LPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500| V
Gate-Source Voltage| VGS| ± 20| V
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 8.0|

A

TC = 100 °C| 5.1
Pulsed Drain Current a| IDM| 32
Linear Derating Factor|  | 1.0| W/°C
Single Pulse Avalanche Energy b| EAS| 510| mJ
Repetitive Avalanche Current a| IAR| 8.0| A
Repetitive Avalanche Energy a| EAR| 13| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 125| W
TC = 100 °C| 50
Peak Diode Recovery dV/dt c| dV/dt| 3.5| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Soldering Recommendations (Peak temperature) d| for 10 s|  | 300

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12)
• c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• d. 1.6 mm from case

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The I2PAK (TO-262) is a power package capable of accommodating die sizes up to HEX-4. It provides th e highest power capability and lowest possible on- resistance . The I2PAK (TO-262) is suitable for high current applications because of its low internal connection resistance and ca n dissipate up to 2.0 W.

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 62| °C/W
Maximum Junction-to-Case (Drain)| RthJC| –| 1.0

SPECIFICATION

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.78| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 4.8 A b| –| –| 0.85| W
Forward Transconductance| gfs| VDS = 50 V, ID = 4.8 A b| 4.9| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1300| –|

pF

Output Capacitance| Coss| –| 310| –
Reverse Transfer Capacitance| Crss| –| 120| –
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 8 A, VDS = 400 V

see fig. 6 and 13 b

| –| –| 63|

nC

Gate-Source Charge| Qgs| –| –| 9.3
Gate-Drain Charge| Qgd| –| –| 32
Turn-On Delay Time| td(on)|

VDD = 250 V, ID = 8.0 A

Rg = 9.1 W, RD = 31 W, see fig. 10 b

| –| 14| –|

ns

Rise Time| tr| –| 23| –
Turn-Off Delay Time uo| td(off)| –| 49| –
Fall Time| tf| –| 20| –
Internal Drain Inductance| LD| Between lead,                                D

6 mm (0.25″) from

package and center of          G

die contact

S

| –| 4.5| –|

nH

Internal Source Inductance| LS| –| 7.5| –
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.6| –| 2.8| W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol

D

showing the

integral reverse

G

p – n junction diode

S

| –| –| 8.0|

A

Pulsed Diode Forward Current a| ISM| –| –| 32
Body Diode Voltage| VSD| TJ = 25 °C, IS = 8 A, VGS = 0 V b| –| –| 2.0| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/μs b| –| 460| 970| ns
Body Diode Reverse Recovery Charge| Qrr| –| 4.2| 8.9| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91069.

Package Information

TO-263AB (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

I2PAK (TO-262) (HIGH VOLTAGE)

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outmost extremes of the plastic body.
3. Thermal pad contour optional within dimension E, L1, D1, and E1.
4. Dimension b1 and c1 apply to base metal only.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

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Revision: 01-Jan-2024

Document Number: 91000

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors

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