VISHAY IRFR320 Power MOSFET Owner’s Manual

VISHAY IRFR320 Power MOSFET

Specifications

• Brand: Vishay Siliconix
• Product Models : IRFR320, IRFU320, SiHFR320, SiHFU320
• Product Type : Power MOSFET
• Package Types : DPAK (TO-252), IPAK (TO-251)
• Channel Type : N-Channel MOSFET

Thermal Resistance Ratings

• Maximum junction-to-ambient : RthJA – 110 ℃/W
• Maximum junction-to-ambient (PCB mount): RthJA – 50 ℃/W
• Maximum junction-to-case (drain): RthJC – 3.0 ℃/W

Product Usage Instructions

Mounting Instructions
The DPAK package is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version is suitable for through-hole mounting applications.

Power Dissipation
Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. Ensure proper heat dissipation mechanisms are in place to pre ent overheating.

Soldering Recommendations
Soldering should be done according to the peak temperature recommendations provided in the manual. For the DPAK package, the peak temperature should not exceed 260°C for 10 seconds.

Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFR320,SiHFR320)
• Straight lead (IRFU320,SiHFU320)
• Available in tape and reel
• Fast switching
• Ease of paralleling
  Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straigh t lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications.

PRODUCT SUMMARY

VDS (V)| 400
RDS(on) (W)| VGS = 10 V| 1.8
Qg (Max.) (nC)| 20
Qgs (nC)| 3.3
Qgd (nC)| 11
Configuration| Single
ORDERING INFORMATION

Package| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| IPAK (TO-251)
Lead (Pb)-free and halogen-free| SiHFR320-GE3| SiHFR320TRL-GE3a| SiHFR320TR- GE3 a| –| SiHFU320-GE3
IRFR320PbF-BE3| IRFR320TRLPbF-BE3| IRFR320TRPbF-BE3|  |
Lead (Pb)-free| IRFR320PbF| IRFR320TRLPbFa| IRFR320TRPbF a| IRFR320TRRPbF a| IRFU320PbF

Note

• a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 400| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 3.1|

A

TC = 100 °C| 2.0
Pulsed drain current a| IDM| 12
Linear derating factor|  | 0.33| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 160| mJ
Repetitive avalanche current a| IAR| 3.1| A
Repetitive avalanche energy a| EAR| 4.2| mJ
Maximum power dissipation| TC = 25 °C| PD| 42| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 4.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s|  | 260

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12)
• c. ISD ≤ 3.1 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• d. 1.6 mm from case
• e. When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 110|

°C/W

Maximum junction-to-ambient (PCB mount) a| RthJA| –| –| 50
Maximum junction-to-case (drain)| RthJC| –| –| 3.0

Note

• a. When mounted on 1″ square PCB (FR-4 or G-10 material)

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

• Typical Output Characteristics, TC = 25 °C
• Typical Transfer Characteristics
• Typical Output Characteristics, TC = 150 °C
• Normalized On-Resistance vs. Temperature.
• Typical Capacitance vs. Drain-to-Source Voltage
• Typical Source-Drain Diode Forward Voltage
• Typical Gate Charge vs. Gate-to-Source Voltage
• Maximum Safe Operating Area
• Maximum Drain Current vs. Case Temperature
• Switching Time Waveforms
• Maximum Effective Transient Thermal Impedance, Junction-to-Case
• Unclamped Inductive Test Circuit
• Unclamped Inductive Waveforms
• Maximum Avalanche Energy vs. Drain Current
• Basic Gate Charge Waveform
• Gate Charge Test Circuit

Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91273.

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

VERSION 2: FACILITY CODE = N

Notes

• Dimensioning and tolerance conform to ASME Y14.5M-1994
• All dimensions are in millimeters. Angles are in degrees
• Heat sink side flash is max. 0.8 mm
• The radius on terminal is optional

Case Outline for TO-251AA (High Voltage)

OPTION 1:

ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimensions are shown in inches and millimeters
• Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

DIM.| MIN.| NOM.| MAX.|  | DIM.| MIN.| NOM.| MAX.
---|---|---|---|---|---|---|---|---
A| 2.180| 2.285| 2.390| D2| 5.380| –| –
A1| 0.890| 1.015| 1.140| E| 6.350| 6.540| 6.730
b| 0.640| 0.765| 0.890| E1| 4.32| –| –
b1| 0.640| 0.715| 0.790| e| 2.29 BSC|
b2| 0.760| 0.950| 1.140| L| 8.890| 9.270| 9.650
b3| 0.760| 0.900| 1.040| L1| 1.910| 2.100| 2.290
b4| 4.950| 5.205| 5.460| L2| 0.890| 1.080| 1.270
c| 0.460| –| 0.610| L3| 1.140| 1.330| 1.520
c1| 0.410| –| 0.560| L4| 1.300| 1.400| 1.500
c2| 0.460| –| 0.610| q1| 0°| 7.5°| 15°
D| 5.970| 6.095| 6.220| q2| 4°| –| –
D1| 4.300| –| –|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• All dimensions are in millimeters, angles are in degrees
• Heat sink side flash is max. 0.8 mm

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

Recommended Minimum Pads
Dimensions in Inches/(mm)

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

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FAQ

• Q: What are the different package types available for the Vishay MOSFETs?
  • A: The Vishay MOSFETs are available in DPAK (TO-252) and IPAK (TO-251) package types.
• Q: What are the key features of the Vishay power MOSFETs?
  • A: The key features include fast switching, rugged design, low on-resistance, and cost-effectiveness.
• Q: What is the maximum power dissipation level possible in typical surface-mount applications?
  • A: Power dissipation levels up to 1.5 W are possible.

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFR320, IRFU320, SiHFR320, SiHFU320 MOSFETs | Vishay

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