VISHAY IRFR320 Power MOSFET Owner’s Manual
- June 17, 2024
- VISHAY
Table of Contents
VISHAY IRFR320 Power MOSFET
Specifications
- Brand: Vishay Siliconix
- Product Models : IRFR320, IRFU320, SiHFR320, SiHFU320
- Product Type : Power MOSFET
- Package Types : DPAK (TO-252), IPAK (TO-251)
- Channel Type : N-Channel MOSFET
Thermal Resistance Ratings
- Maximum junction-to-ambient : RthJA – 110 ℃/W
- Maximum junction-to-ambient (PCB mount): RthJA – 50 ℃/W
- Maximum junction-to-case (drain): RthJC – 3.0 ℃/W
Product Usage Instructions
Mounting Instructions
The DPAK package is designed for surface mounting using vapor phase,
infrared, or wave soldering techniques. The straight lead version is suitable
for through-hole mounting applications.
Power Dissipation
Power dissipation levels up to 1.5 W are possible in typical surface-mount
applications. Ensure proper heat dissipation mechanisms are in place to pre
ent overheating.
Soldering Recommendations
Soldering should be done according to the peak temperature recommendations
provided in the manual. For the DPAK package, the peak temperature should not
exceed 260°C for 10 seconds.
Power MOSFET
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Surface-mount (IRFR320,SiHFR320)
- Straight lead (IRFU320,SiHFU320)
- Available in tape and reel
- Fast switching
- Ease of paralleling
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third-generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straigh t lead version (IRFU, SiHFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 W are
possible in typical surface-mount applications.
PRODUCT SUMMARY
VDS (V)| 400
RDS(on) (W)| VGS = 10 V| 1.8
Qg (Max.) (nC)| 20
Qgs (nC)| 3.3
Qgd (nC)| 11
Configuration| Single
ORDERING INFORMATION
Package| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| IPAK
(TO-251)
Lead (Pb)-free and halogen-free| SiHFR320-GE3| SiHFR320TRL-GE3a| SiHFR320TR-
GE3 a| –| SiHFU320-GE3
IRFR320PbF-BE3| IRFR320TRLPbF-BE3| IRFR320TRPbF-BE3| |
Lead (Pb)-free| IRFR320PbF| IRFR320TRLPbFa| IRFR320TRPbF a| IRFR320TRRPbF a|
IRFU320PbF
Note
- a. See device orientation
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 400| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 3.1|
A
TC = 100 °C| 2.0
Pulsed drain current a| IDM| 12
Linear derating factor| | 0.33| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 160| mJ
Repetitive avalanche current a| IAR| 3.1| A
Repetitive avalanche energy a| EAR| 4.2| mJ
Maximum power dissipation| TC = 25 °C| PD| 42| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 4.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 260
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = 50 V, starting TJ = 25 °C, L = 29 mH, Rg = 25 Ω, IAS = 3.1 A (see fig. 12)
- c. ISD ≤ 3.1 A, dI/dt ≤ 65 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- d. 1.6 mm from case
- e. When mounted on 1″ square PCB (FR-4 or G-10 material)
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 110|
°C/W
Maximum junction-to-ambient (PCB mount) a| RthJA| –| –| 50
Maximum junction-to-case (drain)| RthJC| –| –| 3.0
Note
- a. When mounted on 1″ square PCB (FR-4 or G-10 material)
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
- Typical Output Characteristics, TC = 25 °C
- Typical Transfer Characteristics
- Typical Output Characteristics, TC = 150 °C
- Normalized On-Resistance vs. Temperature.
- Typical Capacitance vs. Drain-to-Source Voltage
- Typical Source-Drain Diode Forward Voltage
- Typical Gate Charge vs. Gate-to-Source Voltage
- Maximum Safe Operating Area
- Maximum Drain Current vs. Case Temperature
- Switching Time Waveforms
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
- Unclamped Inductive Test Circuit
- Unclamped Inductive Waveforms
- Maximum Avalanche Energy vs. Drain Current
- Basic Gate Charge Waveform
- Gate Charge Test Circuit
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91273.
TO-252AA Case Outline
VERSION 1: FACILITY CODE = Y
VERSION 2: FACILITY CODE = N
| MILLIMETERS | |
|---|---|
| DIM. | MIN. |
| A | 2.18 |
| A1 | – |
| b | 0.65 |
| b1 | 0.64 |
| b2 | 0.76 |
| b3 | 4.95 |
| c | 0.46 |
| c1 | 0.41 |
| c2 | 0.46 |
| D | 5.97 |
| D1 | 5.21 |
| E | 6.35 |
| E1 | 4.32 |
| e | 2.29 BSC |
| H | 9.94 |
| MILLIMETERS | |
| --- | --- |
| DIM. | MIN. |
| L | 1.50 |
| L1 | 2.74 ref. |
| L2 | 0.51 BSC |
| L3 | 0.89 |
| L4 | – |
| L5 | 1.14 |
| L6 | 0.65 |
| q | 0° |
| q1 | 0° |
| q2 | 25° |
Notes
- Dimensioning and tolerance conform to ASME Y14.5M-1994
- All dimensions are in millimeters. Angles are in degrees
- Heat sink side flash is max. 0.8 mm
- The radius on terminal is optional
Case Outline for TO-251AA (High Voltage)
OPTION 1:
| MILLIMETERS | INCHES | MILLIMETERS | INCHES | |||
|---|---|---|---|---|---|---|
| DIM. | MIN. | MAX. | MIN. | MAX. | DIM. | MIN. |
| MAX. | MIN. | MAX. | ||||
| A | 2.18 | 2.39 | 0.086 | 0.094 | D1 | 5.21 |
| A1 | 0.89 | 1.14 | 0.035 | 0.045 | E | 6.35 |
| b | 0.64 | 0.89 | 0.025 | 0.035 | E1 | 4.32 |
| b1 | 0.65 | 0.79 | 0.026 | 0.031 | e | 2.29 BSC |
| b2 | 0.76 | 1.14 | 0.030 | 0.045 | L | 8.89 |
| b3 | 0.76 | 1.04 | 0.030 | 0.041 | L1 | 1.91 |
| b4 | 4.95 | 5.46 | 0.195 | 0.215 | L2 | 0.89 |
| c | 0.46 | 0.61 | 0.018 | 0.024 | L3 | 1.14 |
| c1 | 0.41 | 0.56 | 0.016 | 0.022 | q1 | 0′ |
| c2 | 0.46 | 0.86 | 0.018 | 0.034 | q2 | 25′ |
| D | 5.97 | 6.22 | 0.235 | 0.245 |
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Dimensions are shown in inches and millimeters
- Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
- Thermal pad contour optional with dimensions b4, L2, E1 and D1
- Lead dimension uncontrolled in L3
- Dimension b1, b3 and c1 apply to base metal only
- Outline conforms to JEDEC® outline TO-251AA
OPTION 2: FACILITY CODE = N
DIM.| MIN.| NOM.| MAX.| | DIM.| MIN.|
NOM.| MAX.
---|---|---|---|---|---|---|---|---
A| 2.180| 2.285| 2.390| D2| 5.380| –| –
A1| 0.890| 1.015| 1.140| E| 6.350| 6.540| 6.730
b| 0.640| 0.765| 0.890| E1| 4.32| –| –
b1| 0.640| 0.715| 0.790| e| 2.29 BSC|
b2| 0.760| 0.950| 1.140| L| 8.890| 9.270| 9.650
b3| 0.760| 0.900| 1.040| L1| 1.910| 2.100| 2.290
b4| 4.950| 5.205| 5.460| L2| 0.890| 1.080| 1.270
c| 0.460| –| 0.610| L3| 1.140| 1.330| 1.520
c1| 0.410| –| 0.560| L4| 1.300| 1.400| 1.500
c2| 0.460| –| 0.610| q1| 0°| 7.5°| 15°
D| 5.970| 6.095| 6.220| q2| 4°| –| –
D1| 4.300| –| –|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- All dimensions are in millimeters, angles are in degrees
- Heat sink side flash is max. 0.8 mm
RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Disclaimer
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NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN OR OTHERWISE.
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persons acting on its or their behalf (collectively, “Vishay”), disclaim any
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FAQ
- Q: What are the different package types available for the Vishay MOSFETs?
- A: The Vishay MOSFETs are available in DPAK (TO-252) and IPAK (TO-251) package types.
- Q: What are the key features of the Vishay power MOSFETs?
- A: The key features include fast switching, rugged design, low on-resistance, and cost-effectiveness.
- Q: What is the maximum power dissipation level possible in typical surface-mount applications?
- A: Power dissipation levels up to 1.5 W are possible.
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED
HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
References
- Vishay Intertechnology: Passives & Discrete Semiconductors
- IRFR320, IRFU320, SiHFR320, SiHFU320 MOSFETs | Vishay