VISHAY IRF520 MOSFET Transistors Instructions

: June 16, 2024
: VISHAY

Table of Contents

VISHAY IRF520 MOSFET Transistors
Power MOSFET
FEATURES
DESCRIPTION
Disclaimer
Documents / Resources

VISHAY IRF520 MOSFET Transistors

Power MOSFET

PRODUCT SUMMARY

VDS (V)| 100
RDS(on) (W)| VGS = 10 V| 0.27
Qg max. (nC)| 16
Qgs (nC)| 4.4
Qgd (nC)| 7.7
Configuration| Single
ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF520PbF
Lead (Pb)-free and halogen-free| IRF520PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 100| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 9.2|

A

TC = 100 °C| 6.5
Pulsed drain current a| IDM| 37
Linear derating factor| | 0.40| W/°C
Single pulse avalanche energy b| EAS| 200| mJ
Repetitive avalanche current a| IAR| 9.2| A
Repetitive avalanche energy a| EAR| 6.0| mJ
Maximum power dissipation| TC = 25 °C| PD| 60| W
Peak diode recovery dV/dt c| dV/dt| 5.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 2.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT|
Static|
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 100| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.13| –| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V|
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA|

Zero gate voltage drain current

| IDSS| VDS = 100 V, VGS = 0 V| –| –| 25|

μA

|
VDS = 80 V, VGS = 0 V, TJ = 150 °C| –| –| 250|
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 5.5 A b| –| –| 0.27| W|
Forward transconductance| gfs| VDS = 50 V, ID = 5.5 A b| 2.7| –| –| S|
Dynamic|
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 360| –|

pF

|
Output capacitance| Coss| –| 150| –|
Reverse transfer capacitance| Crss| –| 34| –|
Total gate charge| Qg|

VGS = 10 V

|

ID = 9.2 A, VDS = 80 V,

see fig. 6 and 13 b

| –| –| 16|

nC

|
Gate-source charge| Qgs| –| –| 4.4|
Gate-drain charge| Qgd| –| –| 7.7|
Turn-on delay time| td(on)|

VDD = 50 V, ID = 9.2 A,

Rg = 18 W, RD = 5.2 W, see fig. 10 b

| –| 8.8| –|

ns

|
Rise time| tr| –| 30| –|
Turn-off delay time| td(off)| –| 19| –|
Fall time| tf| –| 20| –|
Gate input resistance| Rg| f = 1 MHz, open drain| 1.0| –| 5.0| W|
Internal drain inductance| LD| Between lead,| |

D

S

| | –| 4.5| –| |
6 mm (0.25″) from package and center of die contact|

G

| nH|
Internal source inductance| LS| –| 7.5| –|
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| MOSFET symbol| | |

D

S

| –| –| 9.2| |
showing the integral reverse

p – n junction diode

|

G

| A|
Pulsed diode forward current a| ISM| –| –| 37|
Body diode voltage| VSD| TJ = 25 °C, IS = 9.2 A, VGS = 0 V b| –| –| 1.8| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs b| –| 110| 260| ns|
Body diode reverse recovery charge| Qrr| –| 0.53| 1.3| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)|

FEATURES

Dynamic dV/dt rating
Repetitive avalanche rated
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO- 220AB contribute to its wide acceptance throughout the industry.

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 Ω, IAS = 9.2 A (see fig. 12)
ISD ≤ 9.2 A, dI/dt ≤ 110 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
1.6 mm from case

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

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Vishay Siliconix maintains worldwide manufacturing capability.

$VISHAY-IRF520-MOSFET-Transistors-FIG- $6$$ Products may be manufactured at one of several qualified locations.
Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations.

For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91017.

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Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Inter technology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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