VISHAY IRFZ48R Power MOSFET Owner’s Manual
- June 16, 2024
- VISHAY
Table of Contents
VISHAY IRFZ48R Power MOSFET
Power MOSFET
PRODUCT SUMMARY
VDS (V)| 60
RDS(on) (W)| VGS = 10 V| 0.018
Qg (Max.) (nC)| 110
Qgs (nC)| 29
Qgd (nC)| 36
Configuration| Single
FEATURES
- Advanced process technology
- Ultra low on-resistance
- Dynamic dV/dt rating
- 175 °C operating temperature
- Fast switching
- Fully avalanche rated
- Drop in replacement of the SiHFZ48 for linear / audio applications
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
This datasheet provides information about parts that are RoHS-compliant and /
or parts that are non RoHS-compliant. For example, parts with lead (Pb)
terminations are not RoHS-compliant. Please see the information / tables in
this datasheet for details
DESCRIPTION
Advanced power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRFZ48RPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 50|
A
TC = 100 °C| 50
Pulsed drain current a| IDM| 290
Linear derating factor| | 1.3| W/°C
Single pulse avalanche energy b| EAS| 100| mJ
Repetitive avalanche current a| IAR| 50| A
Repetitive avalanche energy a| EAR| 19| mJ
Maximum power dissipation| TC = 25 °C| PD| 190| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- VDD = 25 V, starting TJ = 25 °C, L = 22 μH, Rg = 25 Ω IAS = 72 A (see fig. 12)
- ISD ≤ 72 A, dV/dt ≤ 200 A/ms, VDD ≤ VDS, TJ £ 175 °C
- 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|
°C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 0.8
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.060|
–| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20| –| –| ± 100| nA
Zero gate voltage drain current
| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25|
μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 43 Ab| –| –|
0.018| W
Forward transconductance| gfs| VDS = 25 V, ID = 43 Ab| 27| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 2400| –|
pF
Output capacitance| Coss| –| 1300| –
Reverse transfer capacitance| Crss| –| 190| –
Total gate charge| Qg|
VGS = 10 V
|
ID = 72 A, VDS = 48 V,
see fig. 6 and 13b
| –| –| 110|
nC
Gate-source charge| Qgs| –| –| 29
Gate-drain charge| Qgd| –| –| 36
Turn-on delay time| td(on)|
VDD = 30 V, ID = 72 A,
Rg = 9.1 W, RD = 0.34 W, see fig. 10b
| –| 8.1| –|
ns
Rise time| tr| –| 250| –
Turn-off delay time| td(off)| –| 210| –
Fall time| tf| –| 250| –
Internal drain inductance| L| Between lead, D6 mm (0.25″) from package and
center of Gdie contact S| –| 4.5| –|
nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol
D
showing the
integral reverse G
p – n junction diode
S
| –| –| 50|
A
Pulsed diode forward current a| ISM| –| –| 290
Body diode voltage| VSD| TJ = 25 °C, IS = 72 A, VGS = 0 Vb| –| –| 2.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 72 A, dI/dt = 100
A/μsb| –| 120| 180| ns
Body diode reverse recovery charge| Qrr| –| 0.50| 0.80| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix maintains worldwide manufacturing capability.
Products may be
manufactured at one of sev
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