VISHAY IRF9620 Power MOSFET Owner’s Manual

VISHAY IRF9620 Power MOSFET Owner’s Manual

FEATURES

• Dynamic dV/dt rating
• P-channel
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY

VDS (V)| -200
RDS(on) (L)| VGS = -10 V| 1.5
Qg max. (nC)| 22
Qgs (nC)| 12
Qgd (nC)| 10
Configuration| Single
ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF9620PbF
Lead (Pb)-free and halogen-free| IRF9620PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| -200| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at -10 V| TC = 25 °C| ID| -3.5| A
TC = 100 °C| -2.0
Pulsed srain current a| IDM| -14
Linear serating factor| | 0.32| W/°C
Maximum power dissipation| TC = 25 °C| PD| 40| W
Peak diode recovery dV/dt b| dV/dt| -5.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) c| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. ISD ≤ -3.5 A, dI/dt ≤ 95 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
c. 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 3.1
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -200| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = -1 mA| –| -0.22| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –| -4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -200 V, VGS = 0 V| –| –| -100| μA
VDS = -160 V, VGS = 0 V, TJ = 125 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = -1.5 A b| –| –| 1.5| L
Forward transconductance| gfs| VDS = -50 V, ID = -1.5 A b| 1.0| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = -25 V,f = 1.0 MHz, see fig. 5| –| 350| –| pF
Output capacitance| Coss| –| 100| –
Reverse transfer capacitance| Crss| –| 30| –
Total gate charge| Qg| VGS = -10 V| ID = -4.0 A, VDS = -160 V,see fig. 11 and 18 b| –| –| 22| nC
Gate-source charge| Qgs| –| –| 12
Gate-drain charge| Qgd| –| –| 10
Turn-on delay time| td(on)| VDD = -100 V, ID = -1.5 A,Rg = 50 L, RD = 67 L, see fig. 17 b| –| 15| –| ns
Rise time| tr| –| 25| –
Turn-off delay time| td(off)| –| 20| –
Fall time| tf| –| 15| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.9| –| 5.7| L
Internal drain inductance| LD| Between lead,                          D6 mm (0.25″) from package and center of Gdie contactS
| –| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbolDshowing thein tegral reverseGp – n junction diodeS
| –| –| -3.5| A
Pulsed diode forward current a| ISM| –| –| -14
Body diode voltage| VSD| TJ = 25 °C, IS = -3.5 A, VGS = 0 V b| –| –| -7.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -3.5 A, dI/dt = 100 A/μs b| –| 300| 450| ns
Body diode reverse recovery charge| Qrr| –| 1.9| 2.9| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics

Fig. 2 – Typical Transfer Characteristics

Fig. 3 – Typical Saturation Characteristics

Fig. 4 – Maximum Safe Operating Area

Fig. 5 – Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Fig. 6 – Typical Transconductance vs. Drain Current

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 8 – Breakdown Voltage vs. Temperature

Fig. 9 – Normalized On-Resistance vs. Temperature

Fig. 10 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 11 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 12 – Typical On-Resistance vs. Drain Current

Fig. 13 – Maximum Drain Current vs. Case Temperature

Fig. 14 – Power vs. Temperature Derating Curve

Fig. 15 – Clamped Inductive Test Circuit

Fig. 16 – Clamped Inductive Waveforms

Fig. 17a – Switching Time Test Circuit

**Fig. 17b – Switching Time Waveforms

**

Fig. 18a – Basic Gate Charge Waveform

**Fig. 18b – Gate Charge Test Circuit

**

Peak Diode Recovery dV/dt Test Circuit

Note
Compliment N-Channel of D.U.T. for driver

Fig. 19 – For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91082.

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.

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For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRF9620 MOSFETs | Vishay

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