VISHAY SiHB105N60EF Power MOSFET With Fast Body Diode Owner’s Manual

: June 16, 2024
: VISHAY

Table of Contents

FEATURES
APPLICATIONS
TYPICAL CHARACTERISTICS
Disclaimer
References
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VISHAY SiHB105N60EF Power MOSFET With Fast Body Diode Owner’s Manual

FEATURES

4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
Avalanche energy rated (UIS)
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Solar (PV inverters)

D2PAK (TO-263)

N-Channel MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max.| 650
RDS(on) typ. (W) at 25 °C| VGS = 10 V| 0.088
Qg max. (nC)| 53
Qgs (nC)| 12
Qgd (nC)| 11
Configuration| Single
ORDERING INFORMATION

Package| D2PAK (TO-263)
Lead (Pb)-free and halogen-free| SiHB105N60EF-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 29| A
TC = 100 °C| 19
Pulsed drain current a| IDM| 73
Linear derating factor| | 1.67| W/°C
Single pulse avalanche energy b| EAS| 226| mJ
Maximum power dissipation| PD| 208| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dv/dt| 70| V/ns
Reverse diode dv/dt d| 50
Soldering recommendations (peak temperature) c| For 10 s| | 260| °C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 120 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4 A
c. 1.6 mm from case
d. ISD  ID, di/dt = 400 A/μs, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.6
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.63| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3| –| 5| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 480 V, VGS = 0 V| –| –| 1| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 2| mA
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 13 A| –| 0.088| 0.102| W
Forward transconductance a| gfs| VDS = 20 V, ID = 13 A| –| 8| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,f = 1 MHz| –| 1804| –| pF
Output capacitance| Coss| –| 82| –
Reverse transfer capacitance| Crss| –| 6| –
Effective output capacitance, energy related a| Co(er)| VDS = 0 V to 480 V, VGS = 0 V| –| 63| –
Effective output capacitance, time related b| Co(tr)| –| 407| –
Total gate charge| Qg| VGS = 10 V| ID = 11 A, VDS = 480 V| –| 35| 53| nC
Gate-source charge| Qgs| –| 12| –
Gate-drain charge| Qgd| –| 11| –
Turn-on delay time| td(on)| VDD = 480 V, ID = 13 A, VGS = 10 V, Rg = 9.1 W| –| 20| 40| ns
Rise time| tr| –| 28| 56
Turn-off delay time| td(off)| –| 39| 78
Fall time| tf| –| 19| 38
Gate input resistance| Rg| f = 1 MHz, open drain| 0.3| 0.7| 1.4| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbolDshowing theintegral reverse Gp – n junction diodeS| –| –| 29| A
Pulsed diode forward current| ISM| –| –| 73
Diode forward voltage| VSD| TJ = 25 °C, IS = 13 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr| TJ = 25 °C, IF = IS = 13 A,di/dt = 100 A/μs, VR = 400 V| –| 125| 250| ns
Reverse recovery charge| Qrr| –| 0.8| 1.6| μC
Reverse recovery current| IRRM| –| 12| –| A

Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics

Fig. 2 – Typical Output Characteristics

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Coss and Eoss vs. VDS

Fig. 7 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 – Typical Source-Drain Diode Forward Voltage

Fig. 9 – Maximum Safe Operating Area

Note
a. VGS > minimum VGS at which RDS(on) is specified

Fig. 10 – Maximum Drain Current vs. Case Temperature

Fig. 11 – Temperature vs. Drain-to-Source Voltage

Fig. 12 – Normalized Transient Thermal Impedance, Junction-to-Case

Fig. 13 – Switching Time Test Circuit

Fig. 14 – Switching Time Waveforms

Fig. 15 – Unclamped Inductive Test Circuit

Fig. 16 – Unclamped Inductive Waveforms

Fig. 17 – Basic Gate Charge Waveform

Fig. 18 – Gate Charge Test Circuit

Peak Diode Recovery dv/dt Test Circuit

Fig. 19 – For N-Channel

TO-263AB (HIGH VOLTAGE)

TYPICAL CHARACTERISTICS

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 4.06| 4.83| 0.160| 0.190| D1| 6.86| –| 0.270| –
A1| 0.00| 0.25| 0.000| 0.010| E| 9.65| 10.67| 0.380| 0.420
b| 0.51| 0.99| 0.020| 0.039| E1| 6.22| –| 0.245| –
b1| 0.51| 0.89| 0.020| 0.035| e| 2.54 BSC| 0.100 BSC
b2| 1.14| 1.78| 0.045| 0.070| H| 14.61| 15.88| 0.575| 0.625
b3| 1.14| 1.73| 0.045| 0.068| L| 1.78| 2.79| 0.070| 0.110
c| 0.38| 0.74| 0.015| 0.029| L1| –| 1.65| –| 0.066
c1| 0.38| 0.58| 0.015| 0.023| L2| –| 1.78| –| 0.070
c2| 1.14| 1.65| 0.045| 0.065| L3| 0.25 BSC| 0.010 BSC
D| 8.38| 9.65| 0.330| 0.380| L4| 4.78| 5.28| 0.188| 0.208
ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimensions are shown in millimeters (inches).
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
Thermal PAD contour optional within dimension E, L1, D1 and E1.
Dimension b1 and c1 apply to base metal only.
Datum A and B to be determined at datum plane H.
Outline conforms to JEDEC outline to TO-263AB.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.635 (16.129)

TYPICAL CHARACTERISTICS

Recommended Minimum Pads
Dimensions in Inches/(mm)

Disclaimer

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