IRF9630 Power MOSFET

Product Information

Specifications

• Brand: Vishay Siliconix
• Model: IRF9630
• Package Type: TO-220AB
• Configuration: Single P-Channel MOSFET
• Maximum Drain-Source Voltage (VDS): -200 V
• Maximum Drain-Source On-Resistance (RDS(on)): 5.4 Ω
• Maximum Gate Charge (Qg): 15 nC
• Gate-Source Charge (Qgs): 5.4 nC
• Gate-Drain Charge (Qgd): 15 nC

Description

The Vishay Siliconix IRF9630 is a third generation power MOSFET
that offers fast switching, ruggedized device design, low
on-resistance, and cost-effectiveness. It is designed for use in
various commercial-industrial applications with power dissipation
levels up to approximately 50 W. The TO-220AB package is widely
preferred in the industry due to its low thermal resistance and
cost-effectiveness.

Ordering Information

To order the IRF9630 MOSFET, you can choose between the
following options:

• Package Type: TO-220AB
• Lead (Pb)-free: IRF9630PbF
• Lead (Pb)-free and halogen-free: IRF9630PbF-BE3

Thermal Resistance Ratings

• Maximum Junction-to-Ambient: Not specified
• Case-to-Sink, Flat, Greased Surface: 0.50 °C/W
• Maximum Junction-to-Case (Drain): 1.7 °C/W

Product Usage Instructions

Connection Diagram

The IRF9630 MOSFET has three terminals: Source (S), Drain (D),
and Gate (G). The connection diagram is as follows:

          +---+
          |   |
   S ----|   |
   D ----|   |
   G ----|   |
          |   |
          +---+

Pin Description

• Source (S): Connected to the source of the MOSFET.
• Drain (D): Connected to the drain of the MOSFET.
• Gate (G): Connected to the gate of the MOSFET.

Usage Steps

1. Identify the Source (S), Drain (D), and Gate (G) pins on the
   IRF9630 MOSFET.

2. Connect the Source pin to the source terminal of your
   circuit.

3. Connect the Drain pin to the drain terminal of your
   circuit.

4. Connect the Gate pin to the gate terminal of your circuit.

5. Ensure proper electrical insulation and connections for safe
   operation.

Frequently Asked Questions (FAQ)

Q: What is the maximum drain-source voltage (VDS) of the

IRF9630 MOSFET?

A: The maximum drain-source voltage is -200 V.

Q: What is the maximum drain-source on-resistance (RDS(on)) of

the IRF9630 MOSFET?

A: The maximum drain-source on-resistance is 5.4 Ω.

Q: What is the maximum gate charge (Qg) of the IRF9630

MOSFET?

A: The maximum gate charge is 15 nC.

Q: What is the gate-source charge (Qgs) of the IRF9630

MOSFET?

A: The gate-source charge is 5.4 nC.

Q: What is the gate-drain charge (Qgd) of the IRF9630

MOSFET?

A: The gate-drain charge is 15 nC.

www.vishay.com

IRF9630
Vishay Siliconix

Power MOSFET

TO-220AB

S G

S D G

D P-Channel MOSFET

PRODUCT SUMMARY

VDS (V) RDS(on) max. () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration

-200 VGS = -10 V
29 5.4 15 Single

0.80

FEATURES

· Dynamic dV/dt rating

· Repetitive avalanche rated

Available

· P-channel · Fast switching

Available

· Ease of paralleling

· Simple drive requirements

· Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are
  RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION
Package Lead (Pb)-free Lead (Pb)-free and halogen-free

TO-220AB IRF9630PbF IRF9630PbF-BE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor

VDS

VGS

VGS at 10 V

TC = 25 °C TC = 100 °C

ID

IDM

Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c

TC = 25 °C

EAS IAR EAR PD dV/dt

Operating junction and storage temperature range Soldering recommendations (peak temperature) d

For 10 s

TJ, Tstg

Mounting torque

6-32 or M3 screw

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12) c. ISD -6.5 A, dI/dt 120 A/s, VDD VDS, TJ 150 °C d. 1.6 mm from case

LIMIT -200 ± 20 -6.5 -4.0 -26 0.59 500 -6.4 7.4 74 -5.0 -55 to +150 300 10 1.1

UNIT V
A
W/°C mJ A mJ W V/ns °C
lbf · in N · m

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Document Number: 91084

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IRF9630
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)

RthJA RthCS RthJC

TYP. –
0.50 –

MAX. 62 1.7

UNIT °C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time

VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf

VGS = 0 V, ID = -250 A

Reference to 25 °C, ID = -1 mA

VDS = VGS, ID = -250 A

VGS = ± 20 V

VDS = -200 V, VGS = 0 V

VDS = -160 V, VGS = 0 V, TJ = 125 °C

VGS = -10 V

ID = -3.9 A b

VDS = -50 V, ID = -3.9 A b

VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5

VGS = -10 V

ID = -6.5 A, VDS = -160 V, see fig. 6 and 13 b

VDD = -100 V, ID = -6.5 A, Rg = 12 , RD = 15 , see fig. 10 b

-200 –
-2.0 2.8

-0.24
–

-4.0 ± 100 -100 -500 0.80 –

V V/°C
V nA
A
S

–

700

–

–

200

–

pF

–

40

–

–

–

29

–

–

5.4

nC

–

–

15

–

12

–

–

27

–

ns

–

28

–

–

24

–

Gate input resistance Internal drain inductance

LD

Between lead, 6 mm (0.25″) from

D

package and center of

G

LS

die contact

S

–

4.5

–

nH

–

7.5

–

Internal source inductance

Rg

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

IS

Pulsed diode forward current a

ISM

f = 1 MHz, open drain

MOSFET symbol
showing the integral reverse p -n junction diode

D
G S

0.6

–

3.7

–

–

-6.5

A

–

–

-26

Body diode voltage

VSD

TJ = 25 °C, IS = -6.5 A, VGS = 0 V b

–

–

-6.5

V

Body diode reverse recovery time Body diode reverse recovery charge

trr Qrr

TJ = 25 °C, IF = -6.5 A, dI/dt = 100 A/s b

–

200

300

ns

1.9

2.9

C

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s; duty cycle 2 %

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Document Number: 91084

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www.vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRF9630
Vishay Siliconix

RDS(on), Drain-to-Source On Resistance (Normalized)

– ID, Drain Current (A)

VGS

Top – 15 V

– 10 V

101

– 8.0 V

– 7.0 V

– 6.0 V

– 5.5 V

– 5.0 V

Bottom – 4.5 V

100

– 4.5 V

10-1 10-1
91084_01

20 µs Pulse Width TC = 25 °C

100

101

– VDS, Drain-to-Source Voltage (V)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

VGS Top – 15 V

101

– 10 V

– 8.0 V

– 7.0 V

– 6.0 V

– 5.5 V

– 5.0 V

100 Bottom – 4.5 V

– 4.5 V

– ID, Drain Current (A)

10-1 10-1

20 µs Pulse Width TC = 150 °C

100

101

91084_02

– VDS, Drain-to-Source Voltage (V)

Fig. 2 – Typical Output Characteristics, TC = 150 °C

101 25 °C

150 °C

– ID, Drain Current (A)

100
4
91084_03

20 µs Pulse Width VDS = – 50 V

5

6

7

8

9

10

– VGS, Gate-to-Source Voltage (V)

Fig. 3 – Typical Transfer Characteristics

3.0 ID = – 6.5 A
2.5 VGS = – 10 V

2.0

1.5

1.0

0.5

0.0 – 60 – 40 – 20 0 20 40 60 80 100 120 140 160

91084_04

TJ, Junction Temperature (°C)

Fig. 4 – Normalized On-Resistance vs. Temperature

1200 1000
800 600

VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd
Ciss

Capacitance (pF)

400
200
0 100
91084_05

Coss Crss
101 – VDS, Drain-to-Source Voltage (V)

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

– VGS, Gate-to-Source Voltage (V)

20 ID = – 6.5 A
16

VDS = – 160 V VDS = – 100 V

12

VDS = – 40 V

8

4
0 0
91084_06

For test circuit see figure 13

5

10

15

20

25

30

QG, Total Gate Charge (nC)

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

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– ISD, Reverse Drain Current (A)

101

150 °C

25 °C

100

10-1 0.5
91084_07

VGS = 0 V

1.5

2.5

3.5

4.5

– VSD, Source-to-Drain Voltage (V)

Fig. 7 – Typical Source-Drain Diode Forward Voltage

– ID, Drain Current (A)

103
5
2
102
5
2
10
5
2
1
5
2
0.1 0.1 2

Operation in this area limited by RDS(on)

10 µs 100 µs 1 ms

TC = 25 °C TJ = 150 °C Single Pulse

10 ms

5 1 2 5 10 2 5 102 2 5 103

91084_08

– VDS, Drain-to-Source Voltage (V)

Fig. 8 – Maximum Safe Operating Area

10

IRF9630
Vishay Siliconix

7.0

6.0

– ID, Drain Current (A)

5.0

4.0

3.0

2.0

1.0

0.0 25
91084_09

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 9 – Maximum Drain Current vs. Case Temperature

VDS VGS RG

RD D.U.T.

– 10 V
Pulse width 1 µs Duty factor 0.1 %

+- VDD

Fig. 10a – Switching Time Test Circuit

VGS 10 %

td(on) tr

td(off) tf

90 % VDS
Fig. 10b – Switching Time Waveforms

Thermal Response (ZthJC)

1 D = 0.5

0.2 0.1 0.1 0.05 0.02 0.01
10-2 10-5
91084_11

Single Pulse (Thermal Response)

10-4

10-3

10-2

0.1

t1, Rectangular Pulse Duration (s)

PDM

t1 t2
Notes:
1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC

1

10

Fig. 11 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF9630
Vishay Siliconix

VDS Vary tp to obtain required IAS
RG
– 10 V tp

L
D.U.T IAS
0.01 A

+- VDD

Fig. 12a – Unclamped Inductive Test Circuit

IAS
VDS
VDD tp
VDS Fig. 12b – Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

1200 1000
800

ID Top – 2.9 A
– 4.1 A Bottom – 6.5 A

600 400

200

VDD = – 50 V 0

25

50

75

100

125

150

91084_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c – Maximum Avalanche Energy vs. Drain Current

Current regulator Same type as D.U.T.

– 10 V QGS
VG

QG QGD

Charge

Fig. 13a – Basic Gate Charge Waveform

12 V

50 k

0.2 µF

0.3 µF

D.U.T. + VDS

VGS

– 3 mA

IG

ID

Current sampling resistors

Fig. 13c – Gate Charge Test Circuit

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D.U.T.
+ –

Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations · Low stray inductance · Ground plane · Low leakage inductance current transformer
–

IRF9630
Vishay Siliconix

–

Rg

· dV/dt controlled by Rg

· ISD controlled by duty factor “D” · D.U.T. – device under test

– VDD

Note · Compliment N-Channel of D.U.T. for driver

Driver gate drive

P.W.

Period

D =

P.W. Period

VGS = – 10 Va

D.U.T. lSD waveform

Reverse

recovery

Body diode forward

current

D.U.T. VDS waveform

current dI/dt
Diode recovery

dV/dt VDD

Re-applied voltage

Body diode forward drop Inductor current

Ripple 5 %

ISD

Note a. VGS = – 5 V for logic level and – 3 V drive devices

Fig. 14 – For P-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91084.

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Disclaimer

Legal Disclaimer Notice
Vishay

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non- infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links.
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References

• vishay.com/doc?91000
• vishay.com/doc?99912
• IRF9630 MOSFETs | Vishay

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