VISHAY IRFRC20 Power MOSFET Instruction Manual

VISHAY IRFRC20 Power MOSFET

Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface-mount (IRFRC20, SiHFRC20)
• Straight lead (IRFUC20, SiHFUC20)
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFUC, SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.

PRODUCT SUMMARY

VDS (V)| 600
RDS(on) (W)| VGS = 10 V| 4.4
Qg (Max.) (nC)| 18
Qgs (nC)| 3.0
Qgd (nC)| 8.9
Configuration| Single
ORDERING INFORMATION

Package| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| DPAK (TO-252)| IPAK (TO-251)
Lead (Pb)-free and halogen-free| SiHFRC20-GE3| SiHFRC20TRL-GE3| SiHFRC20TR- GE3| SiHFRC20TRR-GE3| SiHFUC20-GE3
IRFRC20PbF-BE3| IRFRC20TRLPbF-BE3| IRFRC20TRPbF-BE3| IRFRC20TRRPbF-BE3| –
Lead (Pb)-free| IRFRC20PbF| IRFRC20TRLPbF a| IRFRC20TRPbF a| IRFRC20TRRPbF a| IRFUC20PbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 600| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 2.0|

A

TC = 100 °C| 1.3
Pulsed drain current a| IDM| 8.0
Linear derating factor| | 0.33| W/°C
Linear derating factor (PCB mount) e| 0.020
Single pulse avalanche energy b| EAS| 74| mJ
Repetitive avalanche current a| IAR| 2.0| A
Repetitive avalanche energy a| EAR| 4.2| mJ
Maximum power dissipation| TC = 25 °C| PD| 42| W
Maximum power dissipation (PCB mount) e| TA = 25 °C| 2.5
Peak diode recovery dV/dt c| dV/dt| 3.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 260

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12)
•  ISD ≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case
• When mounted on 1″ square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 110|

°C/W

Maximum junction-to-ambient (PCB mount) a| RthJA| –| –| 50
Maximum junction-to-case (drain)| RthJC| –| –| 3.0

Note

• When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 600| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.88| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 600 V, VGS = 0 V| –| –| 100| μA
VDS = 480 V, VGS = 0 V, TJ = 125 °C| –| –| 500
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 1.2 Ab| –| –| 4.4| W
Forward transconductance| gfs| VDS = 50 V, ID = 1.2 A| 1.4| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = – 25 V,
f = 1.0 MHz, see fig. 5| –| 350| –|

pF

Output capacitance| Coss| –| 48| –
Reverse transfer capacitance| Crss| –| 8.6| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 2.0 A, VDS = 360 V, see fig. 6 and 13b

| –| –| 18|

nC

Gate-source charge| Qgs| –| –| 3.0
Gate-drain charge| Qgd| –| –| 8.9
Turn-on delay time| td(on)|

VDD = 300 V, ID = 2.0 A,
Rg = 18 W, RD = 135 W, see fig. 10b

| –| 10| –|

ns

Rise time| tr| –| 23| –
Turn-off delay time| td(off)| –| 30| –
Fall time| tf| –| 25| –
Internal drain inductance| LD| Between lead,
6 mm (0.25″) from package and center of die contact|

G

|

D

S

| | –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse
p – n junction diode|

G

| |

D

S

| –| –| 2.0|

A

Pulsed diode forward current a| ISM| –| –| 8.0
Body diode voltage| VSD| TJ = 25 °C, IS = 2.0 A, VGS = 0 Vb| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 2.0 A, dI/dt = 100 A/μsb| –| 290| 580| ns
Body diode reverse recovery charge| Qrr| –| 0.67| 1.3| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TO-252AA Case Outline

VERSION 1: FACILITY CODE = Y

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.38
A1| –| 0.127
b| 0.64| 0.88
b2| 0.76| 1.14
b3| 4.95| 5.46
C| 0.46| 0.61
C2| 0.46| 0.89
D| 5.97| 6.22
D1| 4.10| –
E| 6.35| 6.73
E1| 4.32| –
H| 9.40| 10.41
e| 2.28 BSC
e1| 4.56 BSC
L| 1.40| 1.78
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.01| 1.52

VERSION 2: FACILITY CODE = N

| MILLIMETERS
---|---
DIM.| MIN.| MAX.
A| 2.18| 2.39
A1| –| 0.13
b| 0.65| 0.89
b1| 0.64| 0.79
b2| 0.76| 1.13
b3| 4.95| 5.46
c| 0.46| 0.61
c1| 0.41| 0.56
c2| 0.46| 0.60
D| 5.97| 6.22
D1| 5.21| –
E| 6.35| 6.73
E1| 4.32| –
e| 2.29 BSC
H| 9.94| 10.34
| MILLIMETERS
---|---
DIM.| MIN.| MAX.
L| 1.50| 1.78
L1| 2.74 ref.
L2| 0.51 BSC
L3| 0.89| 1.27
L4| –| 1.02
L5| 1.14| 1.49
L6| 0.65| 0.85
q| 0°| 10°
q1| 0°| 15°
q2| 25°| 35°

Note

• Dimensioning and tolerance confirm to ASME 5M-1994
• All dimensions are in Angles are in degrees
• Heat sink side flash is 0.8 mm
• Radius on terminal is optional

Case Outline for TO-251AA (High Voltage)

OPTION 1:

| MILLIMETERS| INCHES| | | MILLIMETERS| INCHES
---|---|---|---|---|---|---
DIM.| MIN.| MAX.| MIN.| MAX.| DIM.| MIN.| MAX.| MIN.| MAX.
A| 2.18| 2.39| 0.086| 0.094| D1| 5.21| –| 0.205| –
A1| 0.89| 1.14| 0.035| 0.045| E| 6.35| 6.73| 0.250| 0.265
b| 0.64| 0.89| 0.025| 0.035| E1| 4.32| –| 0.170| –
b1| 0.65| 0.79| 0.026| 0.031| e| 2.29 BSC| 2.29 BSC
b2| 0.76| 1.14| 0.030| 0.045| L| 8.89| 9.65| 0.350| 0.380
b3| 0.76| 1.04| 0.030| 0.041| L1| 1.91| 2.29| 0.075| 0.090
b4| 4.95| 5.46| 0.195| 0.215| L2| 0.89| 1.27| 0.035| 0.050
c| 0.46| 0.61| 0.018| 0.024| L3| 1.14| 1.52| 0.045| 0.060
c1| 0.41| 0.56| 0.016| 0.022| q1| 0′| 15′| 0′| 15′
c2| 0.46| 0.86| 0.018| 0.034| q2| 25′| 35′| 25′| 35′
D| 5.97| 6.22| 0.235| 0.245|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension are shown in inches and millimeters
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions b4, L2, E1 and D1
• Lead dimension uncontrolled in L3
• Dimension b1, b3 and c1 apply to base metal only
• Outline conforms to JEDEC® outline TO-251AA

OPTION 2: FACILITY CODE = N

DIM.| MIN.| NOM.| MAX.| | DIM.| MIN.| NOM.| MAX.
---|---|---|---|---|---|---|---|---
A| 2.180| 2.285| 2.390| D2| 5.380| –| –
A1| 0.890| 1.015| 1.140| E| 6.350| 6.540| 6.730
b| 0.640| 0.765| 0.890| E1| 4.32| –| –
b1| 0.640| 0.715| 0.790| e| 2.29 BSC|
b2| 0.760| 0.950| 1.140| L| 8.890| 9.270| 9.650
b3| 0.760| 0.900| 1.040| L1| 1.910| 2.100| 2.290
b4| 4.950| 5.205| 5.460| L2| 0.890| 1.080| 1.270
c| 0.460| –| 0.610| L3| 1.140| 1.330| 1.520
c1| 0.410| –| 0.560| L4| 1.300| 1.400| 1.500
c2| 0.460| –| 0.610| q1| 0°| 7.5°| 15°
D| 5.970| 6.095| 6.220| q2| 4°| –| –
D1| 4.300| –| –|
ECN: E21-0682-Rev. C, 27-Dec-2021 DWG: 5968

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)

Disclaimer

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References

• applications.no
• IRFRC20, IRFUC20, SiHFRC20, SiHFUC20 Power MOSFET | Vishay

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