VISHAY IRLZ44 Power Mosfet Instruction Manual

VISHAY IRLZ44 Power Mosfet

Power MOSFET

FEATURES

• Dynamic dV/dt rating
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• 175 °C operating temperature
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
  Note
  This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
  Please see the information/tables in this datasheet for details

DESCRIPTION
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 60
RDS(on) (W)| VGS = 5.0 V| 0.028
Qg (Max.) (nC)| 66
Qgs (nC)| 12
Qgd (nC)| 43
Configuration| Single
ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRLZ44PbF
Lead (Pb)-free and halogen-free| IRLZ44PbF-BE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 10
Continuous drain current| VGS at 5 V| TC = 25 °C| ID| 50|

A

TC = 100 °C| 36
Pulsed drain current a| IDM| 200
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 400| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. VDD = 25 V, starting TJ = 25 °C, L = 179 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12)
• c. ISD ≤ 51 A, dV/dt ≤ 250 A/s, VDD ≤ VDS, TJ ≤ 175 °C
• d. 1.6 mm from case
• e. Current limited by the package, (die current = 51 A)

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)|
---|---
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT|
Static|
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V|
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.070| –| V/°C|
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1.0| –| 2.0| V|
Gate-source leakage| IGSS| VGS = 10 V| –| –| ± 100| nA|

Zero gate voltage drain current

| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25|

μA

|
VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250|

Drain-source on-state resistance

| RDS(on)| VGS = 5.0 V| ID = 31 A b| –| –| 0.028| W|
VGS = 4.0 V| ID = 25 A b| –| –| 0.039|
Forward transconductance| gfs| VDS = 25 V, ID = 31 A b| 23| –| –| S|
Dynamic|
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 3300| –|

pF

|
Output capacitance| Coss| –| 1200| –|
Reverse transfer capacitance| Crss| –| 200| –|
Total gate charge| Qg|

VGS = 5.0 V

|

ID = 51 A, VDS = 48 V,

see fig. 6 and 13 b

| –| –| 66|

nC

|
Gate-source charge| Qgs| –| –| 12|
Gate-drain charge| Qgd| –| –| 43|
Turn-on delay time| td(on)|

VDD = 30 V, ID = 51 A,

Rg = 4.6 W, RD = 0.56 W, see fig. 10 b

| –| 17| –|

ns

|
Rise time| tr| –| 230| –|
Turn-off delay time| td(off)| –| 42| –|
Fall time| tf| –| 110| –|
Internal drain inductance| LD| Between lead,| |

D

S

| | –| 4.5| –| |

6 mm (0.25″) from package and center of

|

G

| nH|
Internal source inductance| LS| –| 7.5| –|
die contact| | |
Drain-Source Body Diode Characteristics|
Continuous source-drain diode current| IS| MOSFET symbol| | |

D

S

| –| –| 50c| |

showing the integral reverse

|

G

| A|
Pulsed diode forward current a| ISM| –| –| 200|
p – n junction diode| | |
Body diode voltage| VSD| TJ = 25 °C, IS = 51 A, VGS = 0 V b| –| –| 2.5| V|
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μs b| –| 130| 180| ns|
Body diode reverse recovery charge| Qrr| –| 0.84| 1.3| μC|
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)|

Notes

• a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
• c. Current limited by the package, (die current = 51 A)

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91328.

Package Information

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Disclaimer

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References

• applications.no
• IRLZ44 MOSFETs | Vishay

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