VISHAY IRF840 Power MOSFET User Manual

IRF840 Power MOSFET
User Manual

IRF840 Power MOSFET

PRODUCT SUMMARY

VDS (V)| 500
RDS(on) (L)| VGS = 10 V| 0.85
Qg max. (nC)| 63
Qgs (nC)| 9.3
Qgd (nC)| 32
Configuration| Single

FEATURES

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information/tables in this datasheet for details

DESCRIPTION

Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF840PbF
Lead (Pb)-free and halogen-free| IRF840PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 20| V
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 8.0| A
TC = 100 °C| 5.1
Pulsed drain current a| IDM| 32
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 510| mJ
Repetitive avalanche current a| IAR| 8.0| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| TC = 25 °C| PD| 125| W
Peak diode recovery dv/dt c| DV/DT| 3.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 L, IAS = 0 A (see fig. 12)
c. ISD £ 0 A, dI/dt £ 100 A/μs, VDD £ VDS, TJ £ 150 °C
d. 6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0

SPECIFICATIONS

(T J = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| ΔVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.78| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gates voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 4.8 A b| –| –| 0.85| L
Forward transconductance| gfs| VDS = 50 V, ID = 4.8 A b| 4.9| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5| –| 1300| –| pF
Output capacitance| Coss| –| 310| –
Reverse transfer capacitance| Crss| –| 120| –
Total gate charge| Qg| VGS = 10 V| ID = 8 A, VDS = 400 V, see fig. 6 and 13 b| –| –| 63| nC
Gate-source charge| Qgs| –| –| 9.3
Gate-drain charge| Qgd| –| –| 32
Turn-on delay time| td(on)| VDD = 250 V, ID = 8 A
Rg = 9.1 L, RD = 31 L, see fig. 10 b| –| 14| –| ns
Rise time| tr| –| 23| –
Turn-off delay time| td(off)| –| 49| –
Fall time| tf| –| 20| –
Internal drain inductance| LD| Between lead,
6 mm (0.25″) from the package and the center of die contact| –

| 4.5| –| nH
Internal source inductance| LS| –| 7.5| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 2.8| L
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse p – n junction diode| –| –| 8.0| A
Pulsed diode forward current a| ISM| –| –| 32
Body diode voltage| VSD| TJ = 25 °C, IS = 8 A, VGS = 0 V b| –| –| 2.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs b| –| 460| 970| ns
Body diode reverse recovery charge| Qrr| –| 4.2| 8.9| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91070.

TO-220-1

ECN: E21-0621-Rev. D, 04-Nov-2021
DWG: 6031

Note
• M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Disclaimer

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© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Document Number: 91070
Downloaded from Arrow.com.
S21-0883-Rev. E,
30-Aug-2021
Revision: 01-Jan-2022

References

• applications.no
• IRF840 Power MOSFET | Vishay

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