VISHAY SiHS90N65E Power MOSFET Instruction Manual

VISHAY SiHS90N65E Power MOSFET

FEATURES

• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting
  High-intensity discharge (HID)
  Fluorescent ballast lighting

• Industrial

  • Welding
  • Induction heating
  • Motor drives
  • Battery chargers
  • Renewable energy
  • Solar (PV inverters)

PRODUCT SUMMARY

VDS (V) at TJ max.| 700
RDS(on) (W) typ. at 25 °C| VGS = 10 V| 0.025
Qg (nC) max.| 591
Qgs (nC)| 84
Qgd (nC)| 160
Configuration| Single

INFORMATION

ORDERING INFORMATION

Package| Super-247
Lead (Pb)-free| SiHS90N65E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 650| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 87|

A

TC = 100 °C| 55
Pulsed drain current a| IDM| 323
Linear derating factor|  | 5| W/°C
Single pulse avalanche energy b| EAS| 1930| mJ
Maximum power dissipation| PD| 625| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 41| V/ns
Reverse diode dV/dt d| 4.1
Soldering recommendations (peak temperature) c| for 10 s|  | 300| °C

Notes

• Repetitive rating; pulse width limited by maximum junction temperature
• VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 11.7 A
• 1.6 mm from case
• ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.2
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 650| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.83| –| V/°C
Gate threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 650 V, VGS = 0 V| –| –| 1| μA
VDS = 520 V, VGS = 0 V, TJ = 125 °C| –| –| 25
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 45 A| –| 0.025| 0.029| W
Forward transconductance a| gfs| VDS = 30 V, ID = 45 A| –| 32| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 300 kHz

| –| 11 826| –|

pF

Output capacitance| Coss| –| 528| –
Reverse transfer capacitance| Crss| –| 9| –
Effective output capacitance, energy related a| Co(er)|

VGS = 0 V, VDS = 0 V to 520 V

| –| 384| –
Effective output capacitance, time related b| Co(tr)| –| 1502| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 45 A, VDS = 520 V

| –| 394| 591|

nC

Gate-source charge| Qgs| –| 84| –
Gate-drain charge| Qgd| –| 160| –
Turn-on delay time| td(on)|

VDD = 520 V, ID = 45 A, VGS = 10 V, Rg = 9.1 W

| –| 85| 128|

ns

Rise time| tr| –| 152| 228
Turn-off delay time| td(off)| –| 323| 485
Fall time| tf| –| 267| 401
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| 1.2| 2.4| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

D

showing the

integral reverse                     G

p – n junction diode                          S

| –| –| 87|

A

Pulsed diode forward current| ISM| –| –| 323
Diode forward voltage| VSD| TJ = 25 °C, IS = 45 A, VGS = 0 V| –| 0.9| 1.2| V
Reverse recovery time| trr|

TJ = 25 °C, IF = IS = 45 A,

dI/dt = 100 A/μs, VR = 25 V

| –| 971| 1942| ns
Reverse recovery charge| Qrr| –| 26| 52| μC
Reverse recovery current| IRRM| –| 42| –| A

Notes

• Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS
• Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

TO-274AA (High Voltage)

VERSION 1: FACILITY CODE = Y

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outer extremes of the plastic body
• Outline conforms to JEDEC® outline to TO-274AA
  (1) Dimension measured at tip of lead

VERSION 2: FACILITY CODE = N

ECN: E20-0538-Rev. C, 19-Oct-2020 DWG: 5975

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Outline conforms to JEDEC® outline to TO-274AD
• Dimensions are measured in mm, angles are in degree
• Metal surfaces are tin plated, except area of cut

Disclaimer

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References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• SiHS90N65E E Series Power MOSFET | Vishay

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