VISHAY SiHS90N65E Power MOSFET Instruction Manual
- June 4, 2024
- VISHAY
Table of Contents
VISHAY SiHS90N65E Power MOSFET
FEATURES
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
-
Server and telecom power supplies
-
Switch mode power supplies (SMPS)
-
Power factor correction power supplies (PFC)
-
Lighting
High-intensity discharge (HID)
Fluorescent ballast lighting -
Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
PRODUCT SUMMARY
VDS (V) at TJ max.| 700
RDS(on) (W) typ. at 25 °C| VGS = 10 V| 0.025
Qg (nC) max.| 591
Qgs (nC)| 84
Qgd (nC)| 160
Configuration| Single
INFORMATION
ORDERING INFORMATION
Package| Super-247
Lead (Pb)-free| SiHS90N65E-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 650| V
Gate-source voltage| VGS| ± 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 87|
A
TC = 100 °C| 55
Pulsed drain current a| IDM| 323
Linear derating factor| | 5| W/°C
Single pulse avalanche energy b| EAS| 1930| mJ
Maximum power dissipation| PD| 625| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 41| V/ns
Reverse diode dV/dt d| 4.1
Soldering recommendations (peak temperature) c| for 10 s| | 300| °C
Notes
- Repetitive rating; pulse width limited by maximum junction temperature
- VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 11.7 A
- 1.6 mm from case
- ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.2
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 650| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.83|
–| V/°C
Gate threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
VGS = ± 30 V| –| –| ± 1| μA
Zero gate voltage drain current| IDSS| VDS = 650 V, VGS = 0 V| –| –| 1| μA
VDS = 520 V, VGS = 0 V, TJ = 125 °C| –| –| 25
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 45 A| –| 0.025|
0.029| W
Forward transconductance a| gfs| VDS = 30 V, ID = 45 A| –| 32| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,
f = 300 kHz
| –| 11 826| –|
pF
Output capacitance| Coss| –| 528| –
Reverse transfer capacitance| Crss| –| 9| –
Effective output capacitance, energy related a| Co(er)|
VGS = 0 V, VDS = 0 V to 520 V
| –| 384| –
Effective output capacitance, time related b| Co(tr)| –| 1502| –
Total gate charge| Qg|
VGS = 10 V
|
ID = 45 A, VDS = 520 V
| –| 394| 591|
nC
Gate-source charge| Qgs| –| 84| –
Gate-drain charge| Qgd| –| 160| –
Turn-on delay time| td(on)|
VDD = 520 V, ID = 45 A, VGS = 10 V, Rg = 9.1 W
| –| 85| 128|
ns
Rise time| tr| –| 152| 228
Turn-off delay time| td(off)| –| 323| 485
Fall time| tf| –| 267| 401
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| 1.2| 2.4| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol
D
showing the
integral reverse G
p – n junction diode S
| –| –| 87|
A
Pulsed diode forward current| ISM| –| –| 323
Diode forward voltage| VSD| TJ = 25 °C, IS = 45 A, VGS = 0 V| –| 0.9| 1.2| V
Reverse recovery time| trr|
TJ = 25 °C, IF = IS = 45 A,
dI/dt = 100 A/μs, VR = 25 V
| –| 971| 1942| ns
Reverse recovery charge| Qrr| –| 26| 52| μC
Reverse recovery current| IRRM| –| 42| –| A
Notes
- Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS
- Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
TO-274AA (High Voltage)
VERSION 1: FACILITY CODE = Y
| MILLIMETERS | INCHES | |
|---|---|---|
| DIM. | MIN. | MAX. |
| A | 4.70 | 5.30 |
| A1 | 1.50 | 2.50 |
| A2 | 2.25 | 2.65 |
| b | 1.30 | 1.60 |
| b2 | 1.80 | 2.20 |
| b4 | 3.00 | 3.25 |
| c (1) | 0.38 | 0.89 |
| D | 19.80 | 20.80 |
| MILLIMETERS | INCHES | |
| --- | --- | --- |
| DIM. | MIN. | MAX. |
| D1 | 15.50 | 16.10 |
| D2 | 0.70 | 1.30 |
| E | 15.10 | 16.10 |
| E1 | 13.30 | 13.90 |
| e | 5.45 BSC | 0.215 BSC |
| L | 13.70 | 14.70 |
| L1 | 1.00 | 1.60 |
| R | 2.00 | 3.00 |
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outer extremes of the plastic body
- Outline conforms to JEDEC® outline to TO-274AA
(1) Dimension measured at tip of lead
VERSION 2: FACILITY CODE = N
| MILLIMETERS | MILLIMETERS | |||
|---|---|---|---|---|
| DIM. | MIN. | MAX. | DIM. | MIN. |
| A | 4.83 | 5.21 | D1 | 16.25 |
| A1 | 2.29 | 2.54 | D2 | 0.50 |
| A2 | 1.91 | 2.16 | E | 15.75 |
| b’ | 1.07 | 1.28 | E1 | 13.10 |
| b | 1.07 | 1.33 | E2 | 3.68 |
| b1 | 1.91 | 2.41 | E3 | 1.00 |
| b2 | 1.91 | 2.16 | E4 | 12.38 |
| b3 | 2.87 | 3.38 | e | 5.44 BSC |
| b4 | 2.87 | 3.13 | N | 3 |
| c’ | 0.55 | 0.65 | L | 19.81 |
| c | 0.55 | 0.68 | L1 | 3.70 |
| D | 20.80 | 21.10 | Q | 5.49 |
ECN: E20-0538-Rev. C, 19-Oct-2020 DWG: 5975
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Outline conforms to JEDEC® outline to TO-274AD
- Dimensions are measured in mm, angles are in degree
- Metal surfaces are tin plated, except area of cut
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References
- Vishay Intertechnology: Passives & Discrete Semiconductors
- SiHS90N65E E Series Power MOSFET | Vishay
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