VISHAY IRF740S Power MOSFET Instruction Manual
- June 4, 2024
- VISHAY
Table of Contents
VISHAY IRF740S Power MOSFET
Power MOSFET
FEATURES
- Surface-mount
- Available in tape and reel
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
This datasheet provides information about parts that are RoHS-compliant and/or
parts that are non-RoHS-compliant. For example, parts with lead (Pb)
terminations are not RoHS-compliant. Please see the information/tables in this
datasheet for details
DESCRIPTION
Third-generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK (TO-263) is a surface-mount power package capable of accommodating
die size up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface-mount package. The D2PAK
(TO-263) is suitable for high current applications because of its low internal
connection resistance and ca n dissipate up to 2.0 W in a typical surface
mount application.
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12)
- ISD ≤ 10A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- 1.6 mm from case
- When mounted on 1″ square PCB (FR-4 or G-10 material)
Note
- When mounted on 1″ square PCB (FR-4 or G-10 material).
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
-
Fig- Typical Output Characteristics, TC = 25 °C
-
Fig – Typical Output Characteristics, TC = 150 °C
-
Fig. – Typical Transfer Characteristics
-
Fig. – Normalized On-Resistance vs. Temperature
-
Fig- Typical Capacitance vs. Drain-to-Source Voltage
-
Fig.- Typical Gate Charge vs. Gate-to-Source Voltage
-
Fig – Typical Source-Drain Diode Forward Voltage
-
Fig.- Maximum Safe Operating Area
-
Fig. – Maximum Drain Current vs. Case Temperature
-
Fig.a – Switching Time Test Circuit
Fig. 10b – Switching Time Waveforms
-
Fig. – Maximum Effective Transient Thermal Impedance, Junction-to-Case
-
Fig.a – Unclamped Inductive Test Circuit
Fig.b – Unclamped Inductive Waveforms
Fig. 12c – Maximum Avalanche Energy vs. Drain Current -
Fig.a – Basic Gate Charge Waveform
Fig. 13b – Gate Charge Test Circuit
-
Fig.- For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91055.
TO-263AB (HIGH VOLTAGE)
Notes
- Dimensioning and tolerancing per ASME Y14.5M-1994.
- Dimensions are shown in millimeters (inches).
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
- Thermal PAD contour optional within dimension E, L1, D1 and E1.
- Dimension b1 and c1 apply to base metal only.
- Datum A and B to be determined at datum plane H.
- Outline conforms to JEDEC outline to TO-263AB.
RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT
NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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and all liability for any errors, inaccuracies or incompleteness contained in
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suitability of the products for any particular purpose or the continuing
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product with the properties described in the product specification is suitable
for use in a particular application. Parameters provided in datasheets and /
or specifications may vary in different applications and performance may vary
over time. All operating parameters, including typical parameters, must be
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References
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