VISHAY IRF9530PbF Power MOSFET Owner’s Manual
- June 13, 2024
- VISHAY
Table of Contents
VISHAY IRF9530PbF Power MOSFET
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- P-channel
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
PRODUCT SUMMARY
VDS (V)| -100
RDS(on) (Ù)| VGS = -10 V| 0.30
Qg max. (nC)| 38
Qgs (nC)| 6.8
Qgd (nC)| 21
Configuration| Single
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRF9530PbF
Lead (Pb)-free and halogen-free| IRF9530PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
| SYMBOL| LIMIT|
UNIT
Drain-source voltage
| VDS| -100| V
Gate-source voltage|
VGS
|
± 20
Continuous drain current
| VGS at 10 V| TC = 25 °C| ID| – 12| A
TC = 100 °C
|
-8.2
Pulsed drain current a
| IDM| -48
Linear derating factor| | 0.59|
W/°C
Single pulse avalanche energy b
| EAS| 400| mJ
Repetitive avalanche current a| IAR| -12| A
Repetitive avalanche energy a| EAR| 8.8|
mJ
Maximum power dissipation
| TC = 25 °C| PD| 88| W
Peak diode recovery dV/dt c| dV/dt| – 5.5|
V/ns
Operating junction and storage temperature range
| TJ, Tstg|
-55 to +175
|
°C
Soldering recommendations (peak temperature) d
| For 10 s| |
300
Mounting torque
| 6-32 or M3 screw| | 10| lbf · in
1.1
| N · m
Notes
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = -25 V, starting TJ = 25 °C, L = 4.2 mH, Rg = 25 Ω, IAS = -12 A (see fig. 12)
- c. ISD ≤ -12 A, dI/dt ≤ 140 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
- d. 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.7
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = -250 μA| -100| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = -1 mA| –|
-0.10| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = -250 μA| -2.0| –|
-4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = -100 V, VGS = 0 V| –| –| -100|
μA
VDS = -80 V, VGS = 0 V, TJ = 150 °C| –| –| -500
Drain-source on-state resistance| RDS(on)| VGS = -10 V| ID = -7.2 A b| –| –|
0.30| Ù
Forward transconductance| gfs| VDS = -50 V, ID = -7.2 A b| 3.7| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = -25 V, Mf = 1.0 MHz, see fig. 5| –|
860| –| pF
Output capacitance| Coss| –| 340| –
Reverse transfer capacitance| Crss| –| 93| –
Total gate charge| Qg| VGS = -10 V| ID = -12 A, VDS = -80 V, see fig. 6 and 13
b| –| –| 38| nC
Gate-source charge| Qgs| –| –| 6.8
Gate-drain charge| Qgd| –| –| 21
Turn-on delay time| td(on)| VDD = -50 V, ID = -12 A, Rg = 12 Ù,RD = 3.9 Ù, see
fig. 10 b| –| 12| –| ns
Rise time| tr| –| 52| –
Turn-off delay time| td(off)| –| 31| –
Fall time| tf| –| 39| –
Gate input resistance| LD| Between lead, D 6 mm (0.25″) from package and
center ofGdie contact
| –| 4.5| –| nH
Internal drain inductance| LS| –| 7.5| –
Internal source inductance| Rg| f = 1 MHz, open drain| 0.4| –| 3.3| Ù
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbolDshowing theintegral
reverseGp -n junction diodeS
| –| –| -12| A
Pulsed diode forward current a| ISM| –| –| -48
Body diode voltage| VSD| TJ = 25 °C, IS = -12 A, VGS = 0 V b| –| –| -6.3| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = -12 A, dI/dt = 100
A/μs b| –| 120| 240| ns
Body diode reverse recovery charge| Qrr| –| 0.46| 0.92| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
Note
- Compliment N-Channel of D.U.T. for driver
- Driver gate drive
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91076
TO-220-1
DIM.
| MILLIMETERS| INCHES
---|---|---
MIN.| MAX.| MIN.|
MAX.
A
| 4.24| 4.65| 0.167| 0.183
b| 0.69| 1.02| 0.027|
0.040
b(1)
| 1.14| 1.78| 0.045| 0.070
c| 0.36| 0.61| 0.014|
0.024
D
| 14.33| 15.85| 0.564| 0.624
E| 9.96| 10.52| 0.392|
0.414
e
| 2.41| 2.67| 0.095| 0.105
e(1)| 4.88| 5.28| 0.192|
0.208
F
| 1.14| 1.40| 0.045| 0.055
H(1)| 6.10| 6.71| 0.240|
0.264
J(1)
| 2.41| 2.92| 0.095| 0.115
L| 13.36| 14.40| 0.526|
0.567
L(1)
| 3.33| 4.04| 0.131| 0.159
Ø P| 3.53| 3.94| 0.139|
0.155
Q
| 2.54| 3.00| 0.100| 0.118
ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031
Note
- M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
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References
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