VISHAY IRFP350LCPbF N-Channel Mosfet Instruction Manual

VISHAY IRFP350LCPbF N-Channel Mosfet

Product Information

Product Usage Instructions

1. Ensure that the product is properly mounted in the TO-247AC package.
2. Connect the drain (D), gate (G), and source (S) terminals of the MOSFET according to the desired circuit configuration.
3. Apply a suitable drain-source voltage (VDS) within the specified range (400 V with VGS = 10 V).
4. Control the gate-source voltage (VGS) to achieve the desired operating conditions.
5. Observe the maximum continuous drain current (ID) and maximum pulsed drain current (IDM) limits.
6. Ensure proper thermal management by considering the thermal resistance ratings:

Note: For detailed technical specifications and additional information, please refer to the product datasheet available at www.vishay.com/doc?99912.

For any technical questions or support, please contact hvm@vishay.com.

Power MOSFET

PRODUCT SUMMARY

VDS (V)| 400
RDS(on) (W)| VGS = 10 V| 0.30
Qg (Max.) (nC)| 76
Qgs (nC)| 20
Qgd (nC)| 37
Configuration| Single

FEATURES

• Ultra low gate charge
• Reduced gate drive requirement
• Enhanced 30 VGS rating
• Reduced Ciss, Coss, Crss
• Isolated central mounting hole
• Dynamic dV/dt rated
• Repetitive avalanche rated
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

• This datasheet provides information about parts that are  RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

ORDERING INFORMATION

Package| TO-247AC
Lead (Pb)-free| IRFP350LCPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 400| V
Gate-source voltage| VGS| ± 30
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 16|

A

TC = 100 °C| 9.9
Pulsed drain Current a| IDM| 64
Linear derating factor| | 1.5| W/°C
Single pulse avalanche energy b| EAS| 390| mJ
Repetitive avalanche current a| IAR| 16| A
Repetitive avalanche energy a| EAR| 19| mJ
Maximum power dissipation| TC = 25 °C| PD| 190| W
Peak diode recovery dV/dt c| dV/dt| 4.0| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| for 10 s| | 300d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• VDD = 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12)
• ISD ≤ 16 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 40|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.24| –
Maximum junction-to-case (drain)| RthJC| –| 0.65
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 400| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.49| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 400 V, VGS = 0 V| –| –| 25| μA
VDS = 320 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 9.6 A b| –| –| 0.30| W
Forward transconductance| gfs| VDS = 50 V, ID = 9.6 A b| 8.1| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 2200| –|

pF

Output capacitance| Coss| –| 390| –
Reverse transfer capacitance| Crss| –| 31| –
Total Gate charge| Qg|

VGS = 10 V

|

ID = 16 A, VDS = 320 V

see fig. 6 and 13 b

| –| –| 76|

nC

Gate-source charge| Qgs| –| –| 20
Gate-drain charge| Qgd| –| –| 37
Turn-on delay time| td(on)|

VDD = 200 V, ID = 16 A,

Rg = 6.2 W, RD = 12 W, see fig. 10 b

| –| 14| –|

ns

Rise time| tr| –| 54| –
Turn-off delay time| td(off)| –| 33| –
Fall time| tf| –| 35| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol
Showing the integral reverse     p – n junction diode| –| –| 16|

A

Pulsed diode forward current a

|

ISM

|

–

|

–

|

64

Body diode voltage| VSD| TJ = 25 °C, IS = 16 A, VGS = 0 V b| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 16 A, dI/dt = 100 A/μs b| –| 440| 660| ns
Body diode reverse recovery charge| Qrr| –| 4.1| 6.2| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 – Typical Output Characteristics, TC = 25 °C

Fig. 2 – Typical Output Characteristics, TC = 150 °C

Fig. 3 – Typical Transfer Characteristics

Fig. 4 – Normalized On-Resistance vs. Temperature

Fig. 5 – Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 – Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 – Typical Source-Drain Diode Forward Voltage

Fig. 8 – Maximum Safe Operating Area

Fig. 9 – Maximum Drain Current vs. Case Temperature

Fig. 10 – Switching Time Test Circuit

Fig. 11 – Switching Time Waveforms

Fig. 12 – Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 13 – Unclamped Inductive Test Circuit

Fig. 14 – Unclamped Inductive Waveforms

Fig. 15 – Maximum Avalanche Energy vs. Drain Current

Fig. 16 – Basic Gate Charge Waveform

Fig. 17 – Gate Charge Test Circuit

Peak Diode Recovery dV/dt Test Circuit

Fig. 18 – For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91224.

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
| MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
D1| 16.46| 16.76| 17.06| 5
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at th e outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b 4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
| MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
D2| 0.51| 1.30|
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|
| |

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Contour of slot optional
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions D1 and E1
• Lead finish uncontrolled in L1
• Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
• Outline conforms to JEDEC outline TO-247 with exception of dimension c

VERSION 3: FACILITY CODE = N

| MILLIMETERS| | | MILLIMETERS
---|---|---|---|---
DIM.| MIN.| MAX.| DIM.| MIN.| MAX.
A| 4.65| 5.31| D2| 0.51| 1.35
A1| 2.21| 2.59| E| 15.29| 15.87
A2| 1.17| 1.37| E1| 13.46| –
b| 0.99| 1.40| e| 5.46 BSC
b1| 0.99| 1.35| k| 0.254
b2| 1.65| 2.39| L| 14.20| 16.10
b3| 1.65| 2.34| L1| 3.71| 4.29
b4| 2.59| 3.43| N| 7.62 BSC
b5| 2.59| 3.38| P| 3.56| 3.66
c| 0.38| 0.89| P1| –| 7.39
c1| 0.38| 0.84| Q| 5.31| 5.69
D| 19.71| 20.70| R| 4.52| 5.49
D1| 13.08| –| S| 5.51 BSC
ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

• Dimensioning and tolerancing per ASME Y14.5M-1994
• Contour of slot optional
• Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured a t the outermost extremes of the plastic body
• Thermal pad contour optional with dimensions D1 and E1
• Lead finish uncontrolled in L1
• Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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References

• applications.no
• IRFP350LC MOSFETs | Vishay

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