VISHAY IRFZ40 Siliconix Power MOSFET Instruction Manual

: June 9, 2024
: VISHAY

Table of Contents

VISHAY IRFZ40 Siliconix Power MOSFET
FEATURES
DESCRIPTION
SPECIFICATIONS
TYPICAL CHARACTERISTICS
Peak Diode Recovery dV/dt Test Circuit
Package Information
Legal Disclaimer Notice
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRFZ40 Siliconix Power MOSFET

FEATURES

Dynamic dV/dt rating
175 °C operating temperature
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note
This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universially preferred for commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

PRODUCT SUMMARY

VDS (V)| 60
RDS(on) (Ù)| VGS = 10 V| 0.028
Qg (Max.) (nC)| 67
Qgs (nC)| 18
Qgd (nC)| 25
Configuration| Single
ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRFZ40PbF
Lead (Pb)-free and halogen-free| IRFZ40PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 20
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 50|

A

TC = 100 °C| 36
Pulsed drain current a| IDM| 200
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 100| mJ
Maximum power dissipation| TC = 25 °C| PD| 150| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12)
ISD ≤ 51 A, dI/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
1.6 mm from case
Current limited by the package, (die current = 51 A)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

SPECIFICATIONS

(T J = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.060| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25| μA
VDS = 48 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 31 Ab| –| –| 0.028| Ù
Forward transconductance| gfs| VDS = 25 V, ID = 31 A| 15| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1900| –|

pF

Output capacitance| Coss| –| 920| –
Reverse transfer capacitance| Crss| –| 170| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 51 A, VDS = 48 V,

see fig. 6 and 13b

| –| –| 67|

nC

Gate-source charge| Qgs| –| –| 18
Gate-drain charge| Qgd| –| –| 25
Turn-on delay time| td(on)|

VDD = 30 V, ID = 51 A,

Rg = 9.1 Ù, RD = 0.55 Ù, see fig. 10b

| –| 14| –|

ns

Rise time| tr| –| 110| –
Turn-off delay time| td(off)| –| 45| –
Fall time| tf| –| 92| –
Internal drain inductance| LD| Between lead, 6 mm (0.25″) from package and center of die contact

| –| 4.5| –|

nH

Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol D showing the integral reverse p – n junction diode $VISHAY-IRFZ40-Siliconix-Power- MOSFET-fig- $3$$ | –| –| 50|

A

Pulsed diode forward current a| ISM| –| –| 200
Body diode voltage| VSD| TJ = 25 °C, IS = 51 A, VGS = 0 Vb| –| –| 2.5| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 51 A, dI/dt = 100 A/ms| –| 120| 180| ns
Body diode reverse recovery charge| Qrr| –| 0.53| 0.80| nC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted) $VISHAY-IRFZ40-Siliconix-Power-MOSFET-fig- $6$$ $VISHAY-IRFZ40-Siliconix-Power-MOSFET-fig- $7$$ $VISHAY-IRFZ40-Siliconix-Power-MOSFET-fig- $8$$ $VISHAY-IRFZ40-Siliconix-Power-MOSFET-fig- $9$$ $VISHAY-IRFZ40-Siliconix-Power-MOSFET-fig- $10$$ $VISHAY-IRFZ40-Siliconix-Power-MOSFET- fig- $12$$

Peak Diode Recovery dV/dt Test Circuit

$VISHAY-IRFZ40-Siliconix-Power- MOSFET-fig- $13$$ $VISHAY-IRFZ40-Siliconix-Power- MOSFET-fig- $14$$

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91385.

Package Information

TO-220-1 $VISHAY-IRFZ40-Siliconix-Power-MOSFET-fig- $15$$

DIM.	MILLIMETERS	INCHES
MIN.	MAX.	MIN.
A	4.24	4.65
b	0.69	1.02
b(1)	1.14	1.78
c	0.36	0.61
D	14.33	15.85
E	9.96	10.52
e	2.41	2.67
e(1)	4.88	5.28
F	1.14	1.40
H(1)	6.10	6.71
J(1)	2.41	2.92
L	13.36	14.40
L(1)	3.33	4.04
Ø P	3.53	3.94
Q	2.54	3.00

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note

M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Legal Disclaimer Notice

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Revision : 01-Jan-2023
Document Number: 91000
www.vishay.com
S21-1045-Rev. C, 25-Oct-2021
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000