VISHAY IRL640S Siliconix Power MOSFET Instruction Manual

: June 9, 2024
: VISHAY

Table of Contents

VISHAY IRL640S Siliconix Power MOSFET
FEATURES
TYPICAL CHARACTERISTICS
References
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VISHAY IRL640S Siliconix Power MOSFET

VISHAY IRL640S Siliconix Power
MOSFET product

FEATURES

Surface-mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Logic-level gate drive
RDS(on) specified at VGS = 4 V and 5 V
Fast switching
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note : This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

VISHAY IRL640S Siliconix Power MOSFET 1

PRODUCT SUMMARY

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION

Note
a. See device orientation

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 200| V
Gate-Source Voltage| VGS| ± 10
Continuous Drain Current| VGS at 5.0 V| TC = 25 °C| ID| 17|

A

TC = 100 °C| 11
Pulsed Drain Current a| IDM| 68
Linear Derating Factor| | 1.0| W/°C
Linear Derating Factor (PCB mount) e| | 0.025
Single Pulse Avalanche Energy b| EAS| 580| mJ
Repetitive Avalanche Current a| IAR| 10| A
Repetitive Avalanche Energy a| EAR| 13| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 125| W
Maximum Power Dissipation (PCB mount) e| TA = 25 °C| 3.1
Peak Diode Recovery dV/dt c| dV/dt| 5.0| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| -55 to +150| °C
Soldering Temperature d| For 10 s| | 300

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. VDD = 50 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25 , IAS = 17 A (see fig. 12)
c. ISD 17 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C
d. 1.6 mm from case
e. When mounted on 1” square PCB (FR-4 or G-10 material)

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| –| 62|

°C/W

Maximum Junction-to-Ambient (PCB mount) a| RthJA| –| –| 40
Maximum Junction-to-Case (Drain)| RthJC| –| –| 1.0

Note
a. When mounted on 1″ square PCB (FR-4 or G-10 material)

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0, ID = 250 μA| 200| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.27| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1.0| –| 2.0| V
Gate-Source Leakage| IGSS| VGS = ± 10 V| –| –| ± 100| nA
Zero Gate Voltage Drain Current| IDSS| VDS = 200 V, VGS = 0 V| –| –| 25| μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 5.0 V| ID = 10 A b| –| –| 0.18| W
VGS = 4.0 V| ID = 8.5 A b| –| –| 0.27
Forward Transconductance| gfs| VDS = 50 V, ID = 10 A b| 16| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 1800| –|

pF

Output Capacitance| Coss| –| 400| –
Reverse Transfer Capacitance| Crss| –| 120| –
Total Gate Charge| Qg|

VGS = 5.0 V

|

ID = 17 A, VDS = 160 V,

see fig. 6 and 13 b

| –| –| 66|

nC

Gate-Source Charge| Qgs| –| –| 9.0
Gate-Drain Charge| Qgd| –| –| 38
Turn-On Delay Time| td(on)|

VDD = 100 V, ID = 17 A,

Rg = 4.6 W, RD = 5.7 W, see fig. 10 b

| –| 8.0| –|

ns

Rise Time| tr| –| 83| –
Turn-Off Delay Time| td(off)| –| 44| –
Fall Time| tf| –| 52| –
Internal Drain Inductance| LD| Between lead, D

6 mm (0.25″) from

package and center of G

die contact

S

| –| 4.5| –|

nH

Internal Source Inductance| LS| –| 7.5| –
Gate Input Resistance| Rg| f = 1 MHz, open drain| 0.3| –| 1.2| W
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol D

showing the

integral reverse G

p – n junction diode S

| –| –| 17|

A

Pulsed Diode Forward Current a| ISM| –| –| 68
Body Diode Voltage| VSD| TJ = 25 °C, IS = 17 A, VGS = 0 V b| –| –| 2.0| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b| –| 310| 470| ns
Body Diode Reverse Recovery Charge| Qrr| –| 3.2| 4.8| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width 300 μs; duty cycle 2 %

TYPICAL CHARACTERISTICS

VISHAY IRL640S Siliconix Power MOSFET 2 VISHAY
IRL640S Siliconix Power MOSFET 3

Peak Diode Recovery dV/dt Test Circuit VISHAY IRL640S Siliconix Power
MOSFET 6

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91306.

TO-263AB (HIGH VOLTAGE) VISHAY IRL640S Siliconix Power MOSFET
7

	MILLIMETERS	INCHES			MILLIMETERS	INCHES
DIM.	MIN.	MAX.	MIN.	MAX.	DIM.	MIN.
MAX.	MIN.	MAX.
A	4.06	4.83	0.160	0.190	D1	6.86
A1	0.00	0.25	0.000	0.010	E	9.65
b	0.51	0.99	0.020	0.039	E1	6.22
b1	0.51	0.89	0.020	0.035	e	2.54 BSC
b2	1.14	1.78	0.045	0.070	H	14.61
b3	1.14	1.73	0.045	0.068	L	1.78
c	0.38	0.74	0.015	0.029	L1	–
c1	0.38	0.58	0.015	0.023	L2	–
c2	1.14	1.65	0.045	0.065	L3	0.25 BSC
D	8.38	9.65	0.330	0.380	L4	4.78

ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970

Notes

Dimensioning and tolerancing per ASME Y14.5M-1994.
Dimensions are shown in millimeters (inches).
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outmost extremes of the plastic body at datum A.
Thermal PAD contour optional within dimension E, L1, D1 and E1.
Dimension b1 and c1 apply to base metal only.
Datum A and B to be determined at datum plane H.
Outline conforms to JEDEC outline to TO-263AB.

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts.
Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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